Product Datasheet Search Results:

AUIRLR3636.pdf10 Pages, 633 KB, Original
AUIRLR3636
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 99A Automotive 3-Pin(2+Tab) DPAK Tube
AUIRLR3636TRL.pdf10 Pages, 633 KB, Original
AUIRLR3636TRL
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 99A Automotive 3-Pin(2+Tab) DPAK T/R
IRLR3636PBF.pdf10 Pages, 387 KB, Original
IRLR3636PBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 99A 3-Pin(2+Tab) DPAK Tube
IRLR3636TRLPBF.pdf10 Pages, 387 KB, Original
IRLR3636TRLPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 99A 3-Pin(2+Tab) DPAK T/R
IRLR3636TRPBF.pdf10 Pages, 387 KB, Original
IRLR3636TRPBF
Infineon Technologies Ag
Trans MOSFET N-CH Si 60V 99A 3-Pin(2+Tab) DPAK T/R
AUIRLR3636.pdf11 Pages, 627 KB, Original
AUIRLR3636
International Rectifier
MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
AUIRLR3636(TR).pdf12 Pages, 246 KB, Original
AUIRLR3636(TR)
International Rectifier
Trans MOSFET N-CH 60V 99A 3-Pin(2+Tab) DPAK T/R
AUIRLR3636TR.pdf12 Pages, 246 KB, Original
AUIRLR3636TR
International Rectifier
50 A, 60 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
AUIRLR3636TRL.pdf11 Pages, 627 KB, Original
AUIRLR3636TRL
International Rectifier
MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
AUIRLR3636TRR.pdf11 Pages, 627 KB, Original
AUIRLR3636TRR
International Rectifier
MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
IRLR3636.pdf10 Pages, 389 KB, Original
IRLR3636PBF.pdf10 Pages, 387 KB, Original
IRLR3636PBF
International Rectifier
MOSFET N-CH 60V 50A D-PAK - IRLR3636PBF

Product Details Search Results:

Infineon.com/AUIRLR3636
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"143(W)","Continuous Drain Current":"99(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1514 Bytes - 22:42:10, 02 December 2024
Infineon.com/AUIRLR3636TRL
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"143(W)","Continuous Drain Current":"99(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1529 Bytes - 22:42:10, 02 December 2024
Infineon.com/IRLR3636PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"143(W)","Continuous Drain Current":"99(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1517 Bytes - 22:42:10, 02 December 2024
Infineon.com/IRLR3636TRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"143(W)","Continuous Drain Current":"99(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1532 Bytes - 22:42:10, 02 December 2024
Infineon.com/IRLR3636TRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"143(W)","Continuous Drain Current":"99(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1528 Bytes - 22:42:10, 02 December 2024
Irf.com/AUIRLR3636
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"50A (Tc)","Gate Charge (Qg) @ Vgs":"49nC @ 4.5V","Product Photos":"TO-252-3","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.8 mOhm @ 5...
1800 Bytes - 22:42:10, 02 December 2024
Irf.com/AUIRLR3636(TR)
{"Polarity":"N","Gate-Source Voltage (Max)":"?16 V","Channel Mode":"Enhancement","Power Dissipation":"143 W","Continuous Drain Current":"99 A","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60 V","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1483 Bytes - 22:42:10, 02 December 2024
Irf.com/AUIRLR3636TR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"170 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0083 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"396 A","Channel Type":"N-CHAN...
1610 Bytes - 22:42:10, 02 December 2024
Irf.com/AUIRLR3636TRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"50A (Tc)","Gate Charge (Qg) @ Vgs":"49nC @ 4.5V","Product Photos":"TO-252-3","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.8 mOhm @ 5...
1843 Bytes - 22:42:10, 02 December 2024
Irf.com/AUIRLR3636TRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"170 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0083 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"396 A","Channel Type":"N-CHAN...
1619 Bytes - 22:42:10, 02 December 2024
Irf.com/IRLR3636PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"50A (Tc)","Gate Charge (Qg) @ Vgs":"49nC @ 4.5V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.8 mOhm @ 50A, 10V","Datasheets":"...
2051 Bytes - 22:42:10, 02 December 2024
Irf.com/IRLR3636TRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"50A (Tc)","Gate Charge (Qg) @ Vgs":"49nC @ 4.5V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.8 mOhm @ 50A, 10V","Datasheets":"...
1837 Bytes - 22:42:10, 02 December 2024

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