Product Datasheet Search Results:
- AUIRLR3636
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 60V 99A Automotive 3-Pin(2+Tab) DPAK Tube
- AUIRLR3636TRL
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 60V 99A Automotive 3-Pin(2+Tab) DPAK T/R
- IRLR3636PBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 60V 99A 3-Pin(2+Tab) DPAK Tube
- IRLR3636TRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 60V 99A 3-Pin(2+Tab) DPAK T/R
- IRLR3636TRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 60V 99A 3-Pin(2+Tab) DPAK T/R
- AUIRLR3636
- International Rectifier
- MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
- AUIRLR3636(TR)
- International Rectifier
- Trans MOSFET N-CH 60V 99A 3-Pin(2+Tab) DPAK T/R
- AUIRLR3636TR
- International Rectifier
- 50 A, 60 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
- AUIRLR3636TRL
- International Rectifier
- MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
- AUIRLR3636TRR
- International Rectifier
- MOSFET AUTO 60V 1 N-CH HEXFET 6.8mOhms
- IRLR3636
- International Rectifier
- IRLR3636
- IRLR3636PBF
- International Rectifier
- MOSFET N-CH 60V 50A D-PAK - IRLR3636PBF
Product Details Search Results:
Infineon.com/AUIRLR3636
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"143(W)","Continuous Drain Current":"99(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1514 Bytes - 22:42:10, 02 December 2024
Infineon.com/AUIRLR3636TRL
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"143(W)","Continuous Drain Current":"99(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1529 Bytes - 22:42:10, 02 December 2024
Infineon.com/IRLR3636PBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"143(W)","Continuous Drain Current":"99(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1517 Bytes - 22:42:10, 02 December 2024
Infineon.com/IRLR3636TRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"143(W)","Continuous Drain Current":"99(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1532 Bytes - 22:42:10, 02 December 2024
Infineon.com/IRLR3636TRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"143(W)","Continuous Drain Current":"99(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1528 Bytes - 22:42:10, 02 December 2024
Irf.com/AUIRLR3636
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"50A (Tc)","Gate Charge (Qg) @ Vgs":"49nC @ 4.5V","Product Photos":"TO-252-3","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.8 mOhm @ 5...
1800 Bytes - 22:42:10, 02 December 2024
Irf.com/AUIRLR3636(TR)
{"Polarity":"N","Gate-Source Voltage (Max)":"?16 V","Channel Mode":"Enhancement","Power Dissipation":"143 W","Continuous Drain Current":"99 A","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60 V","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 175C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1483 Bytes - 22:42:10, 02 December 2024
Irf.com/AUIRLR3636TR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"170 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0083 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"396 A","Channel Type":"N-CHAN...
1610 Bytes - 22:42:10, 02 December 2024
Irf.com/AUIRLR3636TRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"50A (Tc)","Gate Charge (Qg) @ Vgs":"49nC @ 4.5V","Product Photos":"TO-252-3","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.8 mOhm @ 5...
1843 Bytes - 22:42:10, 02 December 2024
Irf.com/AUIRLR3636TRR
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"170 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"50 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0083 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"396 A","Channel Type":"N-CHAN...
1619 Bytes - 22:42:10, 02 December 2024
Irf.com/IRLR3636PBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"50A (Tc)","Gate Charge (Qg) @ Vgs":"49nC @ 4.5V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.8 mOhm @ 50A, 10V","Datasheets":"...
2051 Bytes - 22:42:10, 02 December 2024
Irf.com/IRLR3636TRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2.5V @ 100\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"50A (Tc)","Gate Charge (Qg) @ Vgs":"49nC @ 4.5V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Mosfet Backend Wafer Processing 23/Oct/2013","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"6.8 mOhm @ 50A, 10V","Datasheets":"...
1837 Bytes - 22:42:10, 02 December 2024
Documentation and Support
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IRLR3636.pdf | 0.38 | 1 | Request |