07/13/11
www.irf.com 1
HEXFET® Power MOSFET
AUIRLR3636
GDS
Gate Drain Source
S
D
G
V
DSS
60V
R
DS(on)
typ.
5.4m
:
max.
6.8m
:
D (Silicon Limited)
99A
c
ID (Package Limited) 50A
PD - 97700
AUTOMOTIVE GRADE
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
D-Pak
AUIRLR3636
G
S
D
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Symbol
Parameter
Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
e
mJ
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy
d
mJ
dv/dt Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
R
θJC
Junction-to-Case
k
––– 1.05
R
θJA
Junction-to-Ambient (PCB Mount)
j
––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
170
See Fig.14, 15, 22a, 22b
°C
143
22
±16
0.95
-55 to + 175
300
Max.
99
c
70
c
396
50
AUIRLR3636
2www.irf.com
S
D
G
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN- 994 echniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
Notes:
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 50A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.136 mH
RG = 25Ω, IAS = 50A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 50A, di/dt ≤ 1109 A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
–––
0.07
–––
V/°C
–––
5.4
6.8
–––
6.6
8.3
V
GS(th)
Gate Threshold Voltage
1.0
–––
2.5
V
gfs
Forward Transconductance
31
–––
–––
S
R
G(int)
Internal Gate Resistance
–––
0.6 –––
Ω
I
DSS
Drain-to-Source Leakage Current
–––
–––
20
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
Q
g
Total Gate Charge
–––
33
49
Q
gs
Gate-to-Source Charge
–––
11
–––
Q
gd
Gate-to-Drain ("Miller") Charge
–––
15
–––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
–––
18
–––
t
d(on)
Turn-On Delay Time
–––
45
–––
t
r
Rise Time
–––
216
–––
t
d(off)
Turn-Off Delay Time
–––
43
–––
t
f
Fall Time
–––
69
–––
C
iss
Input Capacitance
–––
3779
–––
C
oss
Output Capacitance
–––
332
–––
C
rss
Reverse Transfer Capacitance
–––
163
–––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
i
–––
437
–––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
h
–––
636
–––
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
d
V
SD
Diode Forward Voltage
–––
–––
1.3
V
t
rr
Reverse Recovery Time
–––
27
–––
T
J
= 25°C
V
R
= 51V,
–––
32
–––
T
J
= 125°C
I
F
= 50A
Q
rr
Reverse Recovery Charge
–––
31
–––
T
J
= 25°C
di/dt = 100A/μs
g
–––
43
–––
T
J
= 125°C
I
RRM
Reverse Recovery Current
–––
2.1
–––
A
T
J
= 25°C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= 25V, I
D
= 50A
V
GS
= -16V
showing the
V
DS
= 30V
Conditions
V
GS
= 4.5V
g
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 48V
i
,See Fig.11
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5mA
d
V
GS
= 10V, I
D
= 50A
g
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
ns
V
GS
= 0V, V
DS
= 0V to 48V
h
MOSFET symbol
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
g
integral reverse
p-n junction diode.
V
GS
= 16V
nC
μA
nA
nC
ns
R
DS(on)
Static Drain-to-Source On-Resistance
pF
A
99
c
396
––– –––
––– –––
V
GS
= 4.5V, I
D
= 50A
g
mΩ
I
D
= 50A
R
G
= 7.5
Ω
V
GS
= 4.5V
g
V
DD
= 39V
I
D
= 50A, V
DS
=0V, V
GS
= 4.5V
Conditions
I
D
= 50A
AUIRLR3636
www.irf.com 3
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
 Highest passing voltage.
Qualification Information
†
D-PAK MSL1
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device
Model
Class C5 (+/- 2000V)
†††
AEC-Q101-005
Moisture Sensitivity Level
RoHS Compliant Yes
ESD
Machine Model Class M4 (+/- 600V)
†††
AEC-Q101-002
Human Body Model Class H1C (+/- 2000V)
†††
AEC-Q101-001
AUIRLR3636
4www.irf.com
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
≤60μs PULSE WIDTH
Tj = 25°C
2.7V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
≤60μs PULSE WIDTH
Tj = 175°C
2.7V
1234567
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 25V
≤60μs PULSE WIDTH
-60 -40 -20 020 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 50A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0 5 10 15 20 25 30 35 40
QG, Total Gate Charge (nC)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, Gate-to-Source Voltage (V)
VDS= 48V
VDS= 30V
VDS= 12V
ID= 50A
AUIRLR3636
www.irf.com 5
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.1 0.4 0.7 1 1.3 1.6 1.9
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
110
ID, Drain Current (A)
Limited By Package
-60 -40 -20 020 40 60 80 100120140160180
TJ , Temperature ( °C )
50
55
60
65
70
75
80
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 5mA
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY R
DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100μsec
1msec
10msec
DC
LIMITED BY PACKAGE
0 5 10 15 20 25 30 35 40 45 50 55 60 65
VDS, Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
Energy (μJ)
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 5.69A
10.64A
BOTTOM 50A
AUIRLR3636
6www.irf.com
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 50A
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
Ci i/Ri
Ci= τi/Ri
τ
τC
τ4
τ4
R4
R4Ri (°C/W) τi (sec)
0.02028 0.000011
0.29406 0.000158
0.49179 0.001393
0.24336 0.00725
AUIRLR3636
www.irf.com 7
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
Fig. 19 - Typical Stored Charge vs. dif/dtFig. 18 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Stored Charge vs. dif/dt
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS(th), Gate threshold Voltage (V)
ID = 100μA
ID = 250μA
ID = 1.0mA
ID = 1.0A
0200 400 600 800 1000
diF /dt (A/μs)
0
2
4
6
8
10
12
14
IRRM (A)
IF = 20A
VR = 51V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/μs)
0
2
4
6
8
10
12
14
16
IRRM (A)
IF = 30A
VR = 51V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/μs)
0
50
100
150
200
250
300
350
QRR (A)
IF = 20A
VR = 51V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/μs)
0
50
100
150
200
250
300
350
QRR (A)
IF = 30A
VR = 51V
TJ = 25°C
TJ = 125°C
AUIRLR3636
8www.irf.com
Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T. VDS
ID
IG
3mA
VGS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
VGS
AUIRLR3636
www.irf.com 9
D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AULR3636
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Part Number
IR Logo
Lot Code
AUIRLR3636
10 www.irf.com
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
AUIRLR3636
www.irf.com 11
Ordering Information
Base part number
Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRLR3636
Dpak
Tube
75
AUIRLR3636
Tape and Reel
2000
AUIRLR3636TR
Tape and Reel Left
3000
AUIRLR3636TRL
Tape and Reel Right
3000
AUIRLR3636TRR
AUIRLR3636
12 www.irf.com
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corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or
services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
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and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
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