Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"16A (Tc)","Gate Charge (Qg) @ Vgs":"9.9nC @ 5V","Product Photos":"TO-252-3","PCN Assembly/Origin":"Gen10.2 Mosfet Qualification 12/Dec/2013","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circui...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"16A (Tc)","Gate Charge (Qg) @ Vgs":"9.9nC @ 5V","Product Photos":"TO-252-3","PCN Design/Specification":"Leadframe Update 02/Jun/2015 Leadframe Retraction 03/Jun/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"58 mOhm @ 9.6A,...

{"Factory Pack Quantity":"3000","Product Category":"MOSFET","Brand":"International Rectifier","Packaging":"Reel","RoHS":"Details","Manufacturer":"International Rectifier"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Design Resources":"IRLR024Z Saber Model IRLR024Z Spice Model","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"75","Supplier Device Package":"D-Pak","Datasheets":"IRLR024Z, IRLU024Z","Rds On (Max) @ Id, Vgs":"58 mOhm @ 9.6A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"35W","Other Names":"*IRLR024Z","Packag...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Gate Charge (Qg) @ Vgs":"9.9nC @ 5V","Product Photos":"TO-252-3","Rds On (Max) @ Id, Vgs":"58 mOhm @ 9.6A, 10V","Datasheets":"IRLR024ZPbF, IRLU024ZPbF","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"75","Drain to Source Voltage (Vdss)":"55V","PCN Obsolescence/ EOL":"IRLR024Zxx 17/Jan/2013","Power - Max":"35W","Mounting Type":"...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"25 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0580 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"58 mOhm @ 9.6A, 10V","FET Feature":"Standard","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"6,000","Supplier Device Package":"D-Pak","Packaging":"Tape & Reel (TR)","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRLR024ZPbF, IRLU024ZPbF","Power - Max":"35W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface M...

{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"58 mOhm @ 9.6A, 10V","FET Feature":"Standard","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"1","Supplier Device Package":"D-Pak","Other Names":"IRLR024ZTRPBFDKR","Packaging":"Digi-Reel\u00ae","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"IRLR024ZPbF, IRLU024ZPbF","Power - Max":"35W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63...

{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"25 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0580 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...

{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"25 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"16 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0580 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"64 A","Channel Type":"N-C...