Product Datasheet Search Results:
6 Pages, 167 KB, Scan- IRLR024TR
- International Rectifier
- 60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
6 Pages, 167 KB, Scan- IRLR024TRL
- International Rectifier
- 60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
6 Pages, 167 KB, Scan- IRLR024TRR
- International Rectifier
- 60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
11 Pages, 435 KB, Original- IRLR024TR
- Vishay [siliconix]
- MOSFET N-CH 60V 14A DPAK - IRLR024TR
11 Pages, 435 KB, Original- IRLR024TRL
- Vishay [siliconix]
- MOSFET N-CH 60V 14A DPAK - IRLR024TRL
11 Pages, 435 KB, Original- IRLR024TRLPBF
- Vishay [siliconix]
- MOSFET N-CH 60V 14A DPAK - IRLR024TRLPBF
11 Pages, 435 KB, Original- IRLR024TRPBF
- Vishay [siliconix]
- MOSFET N-CH 60V 14A DPAK - IRLR024TRPBF
6 Pages, 167 KB, Scan- IRLR024TRR
- Vishay [siliconix]
- MOSFET N-CH 60V 14A DPAK - IRLR024TRR
11 Pages, 749 KB, Original- IRLR024TRRPBF
- Vishay Presicion Group
- 14 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Product Details Search Results:
Vishay.com/IRLR024TR
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"-","Standard Package":"2,000","Supplier Device Package":"D-Pak","Datasheets":"IRLR024, IRLU024","Rds On (Max) @ Id, Vgs":"100 mOhm @ 8.4A, 5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","Dra...
1549 Bytes - 07:37:48, 19 December 2024
Vishay.com/IRLR024TRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"-","Standard Package":"3,000","Supplier Device Package":"D-Pak","Datasheets":"IRLR024, IRLU024","Rds On (Max) @ Id, Vgs":"100 mOhm @ 8.4A, 5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","Dra...
1557 Bytes - 07:37:48, 19 December 2024
Vishay.com/IRLR024TRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"-","Standard Package":"3,000","Supplier Device Package":"D-Pak","Datasheets":"IRLR024, IRLU024","Rds On (Max) @ Id, Vgs":"100 mOhm @ 8.4A, 5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount","Dra...
1574 Bytes - 07:37:48, 19 December 2024
Vishay.com/IRLR024TRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"870pF @ 25V","Series":"-","Standard Package":"1","Supplier Device Package":"D-Pak","Datasheets":"IRLR024, IRLU024","Rds On (Max) @ Id, Vgs":"100 mOhm @ 8.4A, 5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"2.5W",...
1740 Bytes - 07:37:48, 19 December 2024
Vishay.com/IRLR024TRR
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"TO-252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Series":"-","Standard Package":"3,000","Supplier Device Package":"D-Pak","Datasheets":"IRLR024/IRLU024 SERIES","Rds On (Max) @ Id, Vgs":"100 mOhm @ 8.4A, 5V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"2.5W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Type":"Surface Mount...
1582 Bytes - 07:37:48, 19 December 2024
Vishay.com/IRLR024TRRPBF
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"91 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"14 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"56 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"60 V","Tra...
1513 Bytes - 07:37:48, 19 December 2024
