Product Datasheet Search Results:
8 Pages, 198 KB, Original- IRLML6401GTRPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R
8 Pages, 193 KB, Original- IRLML6401PBF
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23
9 Pages, 193 KB, Original- IRLML6401TRPBF
- Infineon Technologies Ag
- Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R
9 Pages, 144 KB, Original- IRLML6401
- International Rectifier
- IRLML6401
8 Pages, 198 KB, Original- IRLML6401GPBF
- International Rectifier
- 4.3 A, 12 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236AB
8 Pages, 198 KB, Original- IRLML6401GTRPBF
- International Rectifier
- MOSFET P-CH 12V 4.3A SOT-23-3 - IRLML6401GTRPBF
8 Pages, 193 KB, Original- IRLML6401PBF
- International Rectifier
- 4.3 A, 12 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-236AB
9 Pages, 141 KB, Original- IRLML6401TR
- International Rectifier
- MOSFET P-CH 12V 4.3A SOT-23 - IRLML6401TR
8 Pages, 193 KB, Original- IRLML6401TRPBF
- International Rectifier
- MOSFET P-CH 12V 4.3A SOT-23 - IRLML6401TRPBF
5 Pages, 81 KB, Original- IRLML6401TRPBF**OS4
- International Rectifier
- IRLML6401TRPBF**OS4
4 Pages, 158 KB, Original- IRLML6401TRPBF**OS7
- International Rectifier
- IRLML6401TRPBF**OS7
Product Details Search Results:
Hottech_co/IRLML6401GTRPBF
779 Bytes - 12:27:02, 24 November 2024
Infineon.com/IRLML6401GTRPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b18(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4.3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"12(V)","Packaging":"Tape and Reel","Power Dissipation":"1.3(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1535 Bytes - 12:27:02, 24 November 2024
Infineon.com/IRLML6401PBF
{"Polarity":"P","Gate-Source Voltage (Max)":"'\u00b18(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"4.3(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"12(V)","Power Dissipation":"1.3(W)","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1468 Bytes - 12:27:02, 24 November 2024
Infineon.com/IRLML6401TRPBF
{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b18(V)","Channel Mode":"Enhancement","Power Dissipation":"1.3(W)","Continuous Drain Current":"4.3(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"12(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1537 Bytes - 12:27:02, 24 November 2024
Irf.com/IRLML6401GPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.3 W","Avalanche Energy Rating (Eas)":"33 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-M...
1614 Bytes - 12:27:02, 24 November 2024
Irf.com/IRLML6401GTRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 1.8V Drive","Vgs(th) (Max) @ Id":"950mV @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"4.3A (Ta)","Gate Charge (Qg) @ Vgs":"15nC @ 5V","Product Photos":"SOT-23-3","PCN Assembly/Origin":"Assembly Site Addition 13/Mar/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"50 mOhm...
2100 Bytes - 12:27:02, 24 November 2024
Irf.com/IRLML6401PBF
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"1.3 W","Avalanche Energy Rating (Eas)":"33 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.3 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"3...
1617 Bytes - 12:27:02, 24 November 2024
Irf.com/IRLML6401TR
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 1.8V Drive","Vgs(th) (Max) @ Id":"950mV @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Gate Charge (Qg) @ Vgs":"15nC @ 5V","Product Photos":"SOT-23-3","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"50 mOhm @ 4.3A, 4.5V","Datasheets":"IRLML6401","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"12V","PCN Obsolescence/ EOL":"...
1876 Bytes - 12:27:02, 24 November 2024
Irf.com/IRLML6401TRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 1.8V Drive","Vgs(th) (Max) @ Id":"950mV @ 250\u00b5A","Package / Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"4.3A (Ta)","Gate Charge (Qg) @ Vgs":"15nC @ 5V","Product Photos":"SOT-23-3","PCN Assembly/Origin":"Assembly Site Addition 17/Dec/2014 Assembly Site Addition 13/Mar/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below...
2188 Bytes - 12:27:02, 24 November 2024
Irf.com/IRLML6401TRPBF**OS4
764 Bytes - 12:27:02, 24 November 2024
Irf.com/IRLML6401TRPBF**OS7
762 Bytes - 12:27:02, 24 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRLML6401.pdf | 0.14 | 1 | Request |
