Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient75 100 °C/W
IRLML6401PbF
HEXFET® Power MOSFET
Thermal Resistance
VDSS = -12V
RDS(on) = 0.05Ω
05/13/10
www.irf.com 1
Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A
IDM Pulsed Drain Current -34
PD @TA = 25°C Power Dissipation 1.3
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
EAS Single Pulse Avalanche Energy33 mJ
VGS Gate-to-Source Voltage ± 8.0 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET®
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce a
HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3™, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Description
Micro3™
6
*
'
lUltra Low On-Resistance
lP-Channel MOSFET
l SOT-23 Footprint
lLow Profile (<1.1mm)
lAvailable in Tape and Reel
lFast Switching
l 1.8V Gate Rated
lLead-Free
lHalogen-Free
PD - 94891B
IRLML6401PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.3A, VGS = 0V
trr Reverse Recovery Time ––– 22 33 ns TJ = 25°C, IF = -1.3A
Qrr Reverse RecoveryCharge ––– 8.0 12 nC di/dt = -100A/µs
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
-1.3
-34
A
S
D
G
Surface mounted on 1" square single layer 1oz. copper FR4 board,
steady state.
Starting TJ = 25°C, L = 3.5mH
RG = 25Ω, IAS = -4.3A.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.050 VGS = -4.5V, ID = -4.3A
RDS(on) Static Drain-to-Source On-Resistance  ––– 0.085 VGS = -2.5V, ID = -2.5A
 ––– 0.125 VGS = -1.8V, ID = -2.0A
VGS(th) Gate Threshold Voltage -0.40 -0.55 -0.95 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 8.6 ––– ––– S VDS = -10V, ID = -4.3A
––– ––– -1.0 VDS = -12V, VGS = 0V
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V
QgTotal Gate Charge ––– 10 15 ID = -4.3A
Qgs Gate-to-Source Charge ––– 1.4 2.1 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 2.6 3.9 VGS = -5.0V
td(on) Turn-On Delay Time ––– 11 ––– VDD = -6.0V
trRise Time ––– 32 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 250 ––– RD = 6.0Ω
tfFall Time ––– 210 ––– RG = 89Ω
Ciss Input Capacitance ––– 830 ––– VGS = 0V
Coss Output Capacitance ––– 180 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 125 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
IDSS Drain-to-Source Leakage Current
nA
ns
IRLML6401PbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 110 100
-VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-1.0V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP -7.0V
-5.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.0V
1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VGS, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
-ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 150°C
VDS = -12V
20µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-4.3A
0.1 110 100
-VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
-ID, Drain-to-Source Current (A)
-1.0V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP -7.0V
-5.0V
-4.5V
-3.0V
-2.5V
- 1.8V
-1.5V
BOTTOM -1.0V
IRLML6401PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
110 100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
1200
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs + C
gd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
0.1
1
10
100
0.2 0.6 1.0 1.4 1.8
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0 4 8 12 16
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-4.3A
V =-10V
DS
IRLML6401PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
20
40
60
80
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-1.9A
-3.4A
-4.3A
IRLML6401PbF
6www.irf.com
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0 10203040
-ID , Drain Current ( A )
0.00
0.05
0.10
0.15
0.20
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
VGS = -4.5V
VGS = -2.5VVGS = -1.8V
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.3
0.4
0.5
0.6
0.7
0.8
-VGS(th) Gate threshold Voltage (V)
ID = -250µA
1.0 2.0 3.0 4.0 5.0 6.0 7.0
-VGS, Gate -to -Source Voltage ( V )
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
RDS(on) , Drain-to -Source Voltage ( Ω )
Id = -4.3A
IRLML6401PbF
www.irf.com 7
Micro3 (SOT-23/TO-236AB) Part Marking Information
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
e
E1
E
D
A
B
0.15 [0.006]
e1
12
3
MCBA
5
6
6
5
NOTES:
b
A1 3X
A
A2
ABC
M0.20 [0.008]
0.10 [0.004] C
C
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
0.89 1.12
SYMBOL MAXMIN
A1
b
0.01 0.10
c
0.30 0.50
D
0.08 0.20
E
2.80 3.04
E1
2.10 2.64
e
1.20 1.40
A
0.95 BSC
L0.40 0.60
08
MILLIMETERS
A2 0.88 1.02
e1 1.90 BSC
REF0.54L1
BSC0.25
L2

BSC

REF
%6&

INCHES
80
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
0.0004
MIN MAX

DIMENSIONS
0.972
1.900
Recommended Footprint
0.802
0.950 2.742
3X L
c
L2
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IRLML6401PbF
8www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2010
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.