PD - 93756D IRLML6401 l l l l l l l HEXFET(R) Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching 1.8V Gate Rated G 1 VDSS = -12V 3 D S RDS(on) = 0.05 2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. Micro3 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -12 -4.3 -3.4 -34 1.3 0.8 0.01 33 8.0 -55 to + 150 V A W W/C mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient www.irf.com Typ. Max. Units 75 100 C/W 1 04/29/03 http://store.iiic.cc/ IRLML6401 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. Typ. Max. Units Conditions -12 --- --- V VGS = 0V, ID = -250A --- -0.007 --- V/C Reference to 25C, ID = -1mA --- --- 0.050 VGS = -4.5V, ID = -4.3A --- 0.085 VGS = -2.5V, ID = -2.5A --- 0.125 VGS = -1.8V, ID = -2.0A -0.40 -0.55 -0.95 V VDS = VGS, ID = -250A 8.6 --- --- S VDS = -10V, ID = -4.3A --- --- -1.0 VDS = -12V, VGS = 0V A --- --- -25 VDS = -9.6V, VGS = 0V, TJ = 55C --- --- -100 VGS = -8.0V nA --- --- 100 VGS = 8.0V --- 10 15 ID = -4.3A --- 1.4 2.1 nC VDS = -10V --- 2.6 3.9 VGS = -5.0V --- 11 --- VDD = -6.0V ns --- 32 --- ID = -1.0A --- 250 --- RD = 6.0 --- 210 --- RG = 89 --- 830 --- VGS = 0V --- 180 --- pF VDS = -10V --- 125 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- -1.3 --- --- -34 --- --- --- --- 22 8.0 -1.2 33 12 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.3A, VGS = 0V TJ = 25C, IF = -1.3A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by Surface mounted on 1" square single layer 1oz. copper FR4 board, max. junction temperature. Pulse width 300s; duty cycle 2%. Starting TJ = 25C, L = 3.5mH steady state. RG = 25, IAS = -4.3A. 2 www.irf.com http://store.iiic.cc/ IRLML6401 100 100 VGS -7.0V -5.0V -4.5V -3.0V -2.5V - 1.8V -1.5V BOTTOM -1.0V VGS -7.0V -5.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.0V 10 1 -1.0V 0.1 20s PULSE WIDTH Tj = 25C TOP -I D, Drain-to-Source Current (A) -I D, Drain-to-Source Current (A) TOP 10 1 -1.0V 0.1 20s PULSE WIDTH Tj = 150C 0.01 0.01 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current ( ) T J = 25C T J = 150C 1.0 VDS = -12V 20s PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 100 Fig 2. Typical Output Characteristics 100.0 1.0 10 -VDS, Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 10.0 1 3.5 4.0 ID = -4.3A 1.5 1.0 0.5 0.0 -60 -40 -20 -V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 http://store.iiic.cc/ IRLML6401 10 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 800 600 400 Coss Crss 200 ID = -4.3A VDS =-10V 8 6 4 2 0 0 1 10 0 100 4 8 12 16 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 -IID , Drain Current (A) -ISD , Reverse Drain Current (A) C, Capacitance(pF) 1000 -VGS , Gate-to-Source Voltage (V) 1200 10 TJ = 150 C TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 10us 10 100us 1ms 1 10ms TC = 25 C TJ = 150 C Single Pulse 0.1 0.1 -VSD,Source-to-Drain Voltage (V) 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com http://store.iiic.cc/ IRLML6401 EAS , Single Pulse Avalanche Energy (mJ) 5.0 -ID , Drain Current (A) 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 80 ID -1.9A -3.4A BOTTOM -4.3A TOP 60 40 20 0 25 150 50 75 100 125 150 Starting TJ , Junction Temperature ( C) TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 http://store.iiic.cc/ RDS(on) , Drain-to -Source Voltage ( ) 0.10 0.09 0.08 0.07 0.06 0.05 Id = -4.3A 0.04 0.03 0.02 1.0 2.0 3.0 4.0 5.0 6.0 7.0 RDS ( on ) , Drain-to-Source On Resistance ( ) IRLML6401 0.20 VGS = -1.8V VGS = -2.5V 0.15 0.10 VGS = -4.5V 0.05 0.00 0 10 -VGS, Gate -to -Source Voltage ( V ) 20 30 40 -I D , Drain Current ( A ) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current -VGS(th) Gate threshold Voltage (V) 0.8 0.7 ID = -250A 0.6 0.5 0.4 0.3 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 14. Typical Threshold Voltage Vs. Junction Temperature 6 www.irf.com http://store.iiic.cc/ IRLML6401 Micro3 Package Outline Dimensions are shown in millimeters (inches) D -B- 3 E -A- LEAD ASSIGNMENTS 1 - GATE 2 - SOURCE 3 - DRAIN 3 3 DIM H 1 0.20 ( .008 ) 2 M A M e e1 A -CB 0.008 (.003) A1 3X 0.10 (.004) M L 3X C AS B S NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. www.irf.com C 3X INCHES MILLIMETERS A MIN .032 MAX .044 MIN 0.82 MAX 1.11 A1 .001 .004 0.02 0.10 B .015 .021 0.38 0.54 C .004 .006 0.10 0.15 D .105 .120 2.67 3.05 e .0750 BASIC 1.90 BASIC e1 .0375 BASIC 0.95 BASIC E .047 .055 1.20 1.40 H .083 .098 2.10 2.50 L .005 .010 0.13 0.25 0 8 0 8 MINIMUM RECOMMENDED FOOTPRINT 0.80 ( .031 ) 3X 0.90 ( .035 ) 3X 2.00 ( .079 ) 0.95 ( .037 ) 2X 7 http://store.iiic.cc/ IRLML6401 Part Marking Information Micro3 Notes : T his part marking information applies to devices produced before 02/26/2001 WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR EXAMPLE: T HIS IS AN IRLML6302 PART NUMBER DATE CODE PART NUMBER CODE REFERENCE: 1A = 1B = 1C = 1D = 1E = 1F = 1G = 1H = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z WW = (27-52) IF PRECEDED BY A LETT ER DAT E CODE EXAMPLES: YWW = 9503 = 5C YWW = 9532 = EF YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z Notes : T his part marking information applies to devices produced after 02/26/2001 W = (1-26) IF PRECE DED BY LAS T DIGIT OF CALENDAR YEAR PART NUMBER Y = YEAR W = WEEK LOT CODE PART NUMBER CODE REFERENCE: A= B= C= D= E= F= G= H= IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LETTER 8 YEAR Y 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z www.irf.com http://store.iiic.cc/ IRLML6401 Micro3 Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/03 www.irf.com 9 http://store.iiic.cc/