Product Datasheet Search Results:

AUIRGS4062D1.pdf14 Pages, 639 KB, Original
AUIRGS4062D1
Infineon Technologies Ag
Trans IGBT Chip N-CH 600V 59A 246000mW Automotive 3-Pin(2+Tab) D2PAK Tube
IRGS4062DPBF.pdf12 Pages, 462 KB, Original
IRGS4062DPBF
Infineon Technologies Ag
Trans IGBT Chip N-CH 600V 48A 25000mW 3-Pin(2+Tab) D2PAK Tube
AUIRGS4062D1.pdf16 Pages, 418 KB, Original
AUIRGS4062D1
International Rectifier
IGBT Transistors Automotive 600V Ultra IGBT D2PAK
AUIRGS4062D1TRL.pdf16 Pages, 418 KB, Original
AUIRGS4062D1TRL
International Rectifier
IGBT Transistors Automotive 600V 24A T in a D2PAK
AUIRGS4062D1TRR.pdf16 Pages, 418 KB, Original
AUIRGS4062D1TRR
International Rectifier
IGBT Transistors Automotive 600V 24A T in a D2PAK
IRGS4062D.pdf2 Pages, 1007 KB, Original
IRGS4062DPBF.pdf12 Pages, 462 KB, Original
IRGS4062DPBF
International Rectifier
IGBT 600V 24A COPACK D2PAK - IRGS4062DPBF
IRGS4062DTRL.pdf12 Pages, 431 KB, Original
IRGS4062DTRLPBF.pdf12 Pages, 462 KB, Original
IRGS4062DTRLPBF
International Rectifier
48 A, 600 V, N-CHANNEL IGBT, TO-263AB
IRGS4062DTRR.pdf12 Pages, 431 KB, Original
IRGS4062DTRRPBF.pdf12 Pages, 462 KB, Original
IRGS4062DTRRPBF
International Rectifier
48 A, 600 V, N-CHANNEL IGBT, TO-263AB

Product Details Search Results:

Infineon.com/AUIRGS4062D1
{"Collector Current (DC) ":"59(A)","Operating Temperature (Min)":"-55C","Collector-Emitter Voltage":"600(V)","Mounting":"Surface Mount","Operating Temperature (Max)":"175C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Configuration":"Single","Pin Count":"2 +Tab"}...
1557 Bytes - 14:38:05, 04 April 2025
Infineon.com/IRGS4062DPBF
{"Collector Current (DC) ":"48(A)","Operating Temperature (Min)":"-55C","Collector-Emitter Voltage":"600(V)","Mounting":"Surface Mount","Operating Temperature (Max)":"175C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Packaging":"Rail/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"D2PAK","Configuration":"Single","Pin Count":"2 +Tab"}...
1550 Bytes - 14:38:05, 04 April 2025
Irf.com/AUIRGS4062D1
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"59A","Switching Energy":"532\u00b5J (on), 311\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"1.77V @ 15V, 24A","Td (on/off) @ 25\u00b0C":"19ns/90ns","Input Type":"Standard","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge":"77nC","Product Photos":"TO-263","Voltage - Collector Emitter Breakdown (Max)":"600V","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Reverse Recovery...
1778 Bytes - 14:38:05, 04 April 2025
Irf.com/AUIRGS4062D1TRL
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"59A","Switching Energy":"532\u00b5J (on), 311\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"1.77V @ 15V, 24A","Td (on/off) @ 25\u00b0C":"19ns/90ns","Input Type":"Standard","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge":"77nC","Product Photos":"TO-263","Voltage - Collector Emitter Breakdown (Max)":"600V","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Reverse Recovery...
1909 Bytes - 14:38:05, 04 April 2025
Irf.com/AUIRGS4062D1TRR
{"Status":"ACTIVE","Transistor Type":"INSULATED GATE BIPOLAR"}...
750 Bytes - 14:38:05, 04 April 2025
Irf.com/IRGS4062D
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, D2PAK-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Terminal Position":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Number of Terminals":"2","Surface Mount":"Yes"}...
974 Bytes - 14:38:05, 04 April 2025
Irf.com/IRGS4062DPBF
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"48A","Switching Energy":"115\u00b5J (on), 600\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"1.95V @ 15V, 24A","Td (on/off) @ 25\u00b0C":"41ns/104ns","Input Type":"Standard","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Gate Charge":"50nC","Product Photos":"TO-263","PCN Assembly/Origin":"IGBT Backend Wafer Processing 23/Oct/2013 IGBT Die Alternate Source 18/Nov/2013","Voltage - Collector Emitter Breakdown (Max)":"...
2133 Bytes - 14:38:05, 04 April 2025
Irf.com/IRGS4062DTRL
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, D2PAK-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Terminal Position":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Number of Terminals":"2","Surface Mount":"Yes"}...
991 Bytes - 14:38:05, 04 April 2025
Irf.com/IRGS4062DTRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"164 ns","Collector Current-Max (IC)":"48 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"64 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","Transist...
1477 Bytes - 14:38:05, 04 April 2025
Irf.com/IRGS4062DTRR
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"PLASTIC, D2PAK-3","Terminal Form":"GULL WING","Package Style":"SMALL OUTLINE","Terminal Position":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Number of Terminals":"2","Surface Mount":"Yes"}...
994 Bytes - 14:38:05, 04 April 2025
Irf.com/IRGS4062DTRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Turn-off Time-Nom (toff)":"164 ns","Collector Current-Max (IC)":"48 A","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Turn-on Time-Nom (ton)":"64 ns","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Transistor Type":"INSULATED GATE BIPOLAR","Collector-emitter Voltage-Max":"600 V","Channel Type":"N-CHANNEL","Transist...
1475 Bytes - 14:38:05, 04 April 2025

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