INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGS4062DPbF
IRGSL4062DPbF
1www.irf.com
12/07/09
E
G
n-channel
C
VCES = 600V
IC = 24A, TC = 100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI GC E
Gate Collector Emitter
PD - 97355B
E
C
G
C
C
E
G
D2Pak
IRGS4062DPbF
TO-262
IRGSL4062DPbF
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 48
IC @ TC = 100°C Continuous Collector Current 24
ICM Pulse Collector Current 96
ILM Clamped Inductive Load Current
c
96 A
IF @ TC = 25°C Diode Continous Forward Current 48
IF @ TC = 100°C Diode Continous Forward Current 24
IFM Diode Maximum Forward Current
d
96
VGE Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
PD @ TC = 25°C Maximum Power Dissipation 250 W
PD @ TC = 100°C Maximum Power Dissipation 125
TJOperating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.60
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.53 °C/W
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 –––
IRGS/SL4062DPbF
2www.irf.com
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 100µA
e
CT6
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
—0.30—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-175°C)
CT6
— 1.60 1.95 I
C
= 24A, V
GE
= 15V, T
J
= 25°C
5,6,7
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.03 — V I
C
= 24A, V
GE
= 15V, T
J
= 150°C
9,10,11
—2.04— I
C
= 24A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V V
CE
= V
GE
, I
C
= 700µA
9, 10,
∆V
GE(th)
/∆TJ
Threshold Voltage temp. coefficient — -18 — mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
11, 12
gfe Forward Transconductance — 17 — S V
CE
= 50V, I
C
= 24A, PW = 80µs
I
CES
Collector-to-Emitter Leakage Current — 2.0 25 µA V
GE
= 0V, V
CE
= 600V
—775— V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop — 1.80 2.6 V I
F
= 24A
8
—1.28— I
F
= 24A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 50 75 I
C
= 24A
24
Q
ge
Gate-to-Emitter Charge (turn-on) — 13 20 nC V
GE
= 15V
CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 21 31 V
CC
= 400V
E
on
Turn-On Switching Loss — 115 201 I
C
= 24A, V
CC
= 400V, V
GE
= 15V
CT4
E
off
Turn-Off Switching Loss — 600 700 µJ R
G
= 10Ω, L = 200µH, L
S
= 150nH, T
J
= 25°C
E
total
Total Switching Loss — 715 901
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 41 53 I
C
= 24A, V
CC
= 400V, V
GE
= 15V
CT4
t
r
Rise time — 22 31 ns R
G
= 10Ω, L = 200µH, L
S
= 150nH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 104 115
t
f
Fall time — 29 41
E
on
Turn-On Switching Loss — 420 — I
C
= 24A, V
CC
= 400V, V
GE
=15V
13, 15
E
off
Turn-Off Switching Loss — 840 — µJ R
G
=10Ω, L=100µH, L
S
=150nH, T
J
= 175°C
e
CT4
E
total
Total Switching Loss — 1260 —
Energy losses include tail & diode reverse recovery
WF1, WF2
t
d(on)
Turn-On delay time — 40 — I
C
= 24A, V
CC
= 400V, V
GE
= 15V
14, 16
t
r
Rise time — 24 — ns R
G
= 10Ω, L = 200µH, L
S
= 150nH
CT4
t
d(off)
Turn-Off delay time — 125 — T
J
= 175°C
WF1
t
f
Fall time — 39 —
WF2
C
ies
Input Capacitance — 1490 — pF V
GE
= 0V
23
C
oes
Output Capacitance — 129 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 45 — f = 1.0Mhz
T
J
= 175°C, I
C
= 96A
4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
= 480V, Vp =600V
CT2
Rg = 10Ω, V
GE
= +15V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — µs V
CC
= 400V, Vp =600V
22, CT3
Rg = 10Ω, V
GE
= +15V to 0V
WF4
Erec Reverse Recovery Energy of the Diode — 621 — µJ T
J
= 175°C
17, 18, 19
t
rr
Diode Reverse Recovery Time — 89 — ns V
CC
= 400V, I
F
= 24A
20, 21
I
rr
Peak Reverse Recovery Current — 37 — A V
GE
= 15V, Rg = 10Ω, L =200µH, L
s
= 150nH
WF3
Conditions
IRGS/SL4062DPbF
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
020 40 60 80 100 120 140 160 180
TC (°C)
0
5
10
15
20
25
30
35
40
45
50
IC (A)
0 20 40 60 80 100 120 140 160 180
TC (°C)
0
50
100
150
200
250
300
Ptot (W)
10 100 1000
VCE (V)
1
10
100
1000
IC (A)
0 1 2 3 4 5 6 7 8
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 1 2 3 4 5 6 7 8
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
1 10 100 1000 10000
VCE (V)
0.1
1
10
100
1000
IC (A)
1msec
10µsec
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
IRGS/SL4062DPbF
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Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
012345678
VCE (V)
0
10
20
30
40
50
60
70
80
90
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0
VF (V)
0
20
40
60
80
100
120
IF (A)
-40°c
25°C
175°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
0 5 10 15
VGE (V)
0
20
40
60
80
100
120
ICE (A)
TJ = 25°C
TJ = 175°C
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
5 101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
IRGS/SL4062DPbF
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Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
0 102030405060
IC (A)
0
200
400
600
800
1000
1200
1400
1600
1800
Energy (µJ)
EOFF
EON
10 20 30 40 50
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
025 50 75 100 125
RG (Ω)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
010 20 30 40 50 60
IF (A)
10
15
20
25
30
35
40
IRR (A)
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
025 50 75 100 125
RG (Ω)
5
10
15
20
25
30
35
40
45
IRR (A)
0 25 50 75 100 125
Rg (Ω)
0
200
400
600
800
1000
1200
1400
1600
Energy (µJ)
E
OFF
EON
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Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 24A; L = 600µH
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
0500 1000 1500
diF /dt ( A/µs)
5
10
15
20
25
30
35
40
45
IRR (A)
010 20 30 40 50 60
IF (A)
0
200
400
600
800
1000
Energy (µJ)
RG = 10Ω
RG = 22Ω
RG = 47Ω
RG = 100Ω
8 1012141618
VGE (V)
4
6
8
10
12
14
16
Time (µs)
40
80
120
160
200
240
280
Current (A)
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 5 10 15 20 25 30 35 40 45 50 55
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES
= 300V
VCES
= 400V
0 500 1000 1500
diF /dt (A/µs)
500
1000
1500
2000
2500
3000
3500
4000
QRR (µC)
10Ω
22Ω
100Ω
47Ω
24A
48A
12A
IRGS/SL4062DPbF
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Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.2329 0.000234
0.3631 0.007009
τJ
τJ
τ1
τ1
τ2
τ2
R1
R1R2
R2
τ
τC
Ci i/Ri
Ci= τi/Ri
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.476 0.000763
0.647 0.003028
0.406 0.023686
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
IRGS/SL4062DPbF
8www.irf.com
1K
VC C
DUT
0
L
L
Rg
80 V DUT
480V
DC
4x
DUT
360V
L
Rg
VCC
diode clamp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit
VCC
IRGS/SL4062DPbF
www.irf.com 9
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
-50
-40
-30
-20
-10
0
10
20
30
-0.15 -0.05 0.05 0.15 0.25
time (µS)
I
RR
(A)
Peak
I
RR
Q
RR
t
RR
10%
Pe a k
I
RR
-100
0
100
200
300
400
500
600
-5.00 0.00 5.00 10.00
time (µS)
V
CE
(V)
-50
0
50
100
150
200
250
300
I
CE
(A)
V
CE
I
CE
-100
0
100
200
300
400
500
600
-0.40 0.10 0.60
Time(µs)
V
CE
(V)
-5
0
5
1
0
1
5
2
0
2
5
3
0
EOFF Loss
5% VCE
5% ICE
90% ICE
tf
VCE
ICE
-100
0
100
200
300
400
500
600
11.70 11.90 12.10 12.30
Time (µs)
V
CE
(V)
-10
0
10
20
30
40
50
60
EON
ICE
C
90% test
10% ICE
5% VCE
tr
VCE
C
IRGS/SL4062DPbF
10 www.irf.com
D2Pak (TO-263AB) Part Marking Information
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
'$7(&2'(
<($5 
:((.
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5(&7,),(5
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/2*2
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$66(0%/<
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
IRGS/SL4062DPbF
www.irf.com 11
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
/2*2
5(&7,),(5
,17(51$7,21$/
/27&2'(
$66(0%/<
/2*2
5(&7,),(5
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
IRGS/SL4062DPbF
12 www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/2009
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html