AUIRGB4062D1
AUIRGS4062D1
AUIRGSL4062D1
G C E
Gate Collector Emitter
AUTOMOTIVE GRADE
E
G
n-channel
C
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRGB4062D1 TO-220 Tube 50 AUIRGB4062D1
AUIRGSL4062D1 TO-262 Tube 50 AUIRGSL4062D1
AUIRGS4062D1
Tube 50 AUIRGS4062D1
Tape and Reel Left 800 AUIRGS4062D1TRL
Tape and Reel Right 800 AUIRGS4062D1TRR
D2 Pak
1 2017-08-31
*Qualification standards can be found at www.infineon.com
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Thermal Resistance
Parameter Min. Typ. Max.
Units
RJC (IGBT) Thermal Resistance Junction-to-Case (IGBT) ––– ––– 0.61
°C/W
RJC (Diode) Thermal Resistance Junction-to-Case (Diode) ––– ––– 1.2
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 62 –––
Features
Low VCE (on) Trench IGBT Technology
Low Switching Losses
5µs short circuit SOA
Square RBSOA
100% of the parts tested for ILM
Positive VCE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free, RoHS Compliant
Automotive Qualified *
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
Applications
Air Conditioning Compressor
VCES = 600V
IC(Nominal) = 24A
tSC 5µs, TJ(max) = 175°C
VCE(on) typ. = 1.57V
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 59
A
IC @ TC = 100°C Continuous Collector Current 39
ICM Pulse Collector Current VGE =15V 72
ILM Clamped Inductive Load Current VGE =20V 96
IF @ TC = 25°C Diode Continuous Forward Current 59
IF @ TC = 100°C Diode Continuous Forward Current 39
IFM Maximum Repetitive Forward Current 96
VGE ±20 V
±30
PD @ TC = 25°C Maximum Power Dissipation 246 W
PD @ TC = 100°C Maximum Power Dissipation 123
TJ Operating Junction and -55 to +175
°C
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
IC (Nominal) Nominal Current 24
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated condi-
tions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
G
C
E
C
AUIRGB4062D1
TO-220AB
AUIRGS4062D1
D2Pak
AUIRGSL4062D1
TO-262Pak
C E
G
C
E
G
C
C
AUIRGB/S/SL4062D1
2 2017-08-31
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V
VGE = 0V, IC = 100µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.3 — V/°C
VGE = 0V, IC = 10mA (25°C-175°C)
VCE(on) Collector-to-Emitter Saturation Voltage
— 1.57 1.77
V
IC = 24A, VGE = 15V, TJ = 25°C
— 1.87 — IC = 24A, VGE = 15V, TJ = 150°C
— 1.94 — IC = 24A, VGE = 15V, TJ = 175°C
VGE(th) Gate Threshold Voltage 4.0 — 6.5 V
VCE = VGE, IC = 700µA
VGE(th)/TJ Threshold Voltage temp. coefficient — -17 — mV/°C
VCE = VGE, IC = 1.0mA (25°C-175°C)
gfe Forward Transconductance — 12 — S
VCE = 50V, IC = 24A,PW = 20µs
ICES
Collector-to-Emitter Leakage Current — 1.0 25 µA VGE = 0V, VCE = 600V
— 3.5 —
mAVGE = 0V, VCE = 600V,TJ = 175°C
VFM Diode Forward Voltage Drop
— 1.57 —
V
IF = 24A
— 1.40 — IF = 19A
— 1.47 — IF = 24A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA
VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 51 77
nC
IC = 24A
Qge Gate-to-Emitter Charge (turn-on) — 14 21 VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 21 32 VCC = 400V
Eon Turn-On Switching Loss — 532 754
J
Eoff Turn-Off Switching Loss — 311 526
Etotal Total Switching Loss — 843 1280 IC = 24A, VCC = 400V,
td(on) Turn-On delay time — 19 36
ns
VGE = +15V,RG = 10,
tr Rise time — 24 41 L = 210H, TJ = 25°C
td(off) Turn-Off delay time — 90 109 Energy losses include tail & diode
tf Fall time — 23 40 reverse recovery
Eon Turn-On Switching Loss — 726 —
J
Eoff Turn-Off Switching Loss — 549 —
Etotal Total Switching Loss — 1275 — IC = 24A, VCC = 400V,
td(on) Turn-On delay time — 12 —
ns
VGE = +15V,RG = 10,
tr Rise time — 23 — L = 210H, TJ = 175°C
td(off) Turn-Off delay time — 92 — Energy losses include tail & diode
tf Fall time — 84 — reverse recovery
Cies Input Capacitance — 1487 —
pF
VGE = 0V
Coes Output Capacitance — 118 — VCC = 30V
Cres Reverse Transfer Capacitance — 44 — f = 1.0Mhz
TJ = 175°C, IC = 96A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp ≤ 600V
Rg = 10, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 5 — —
s VCC = 400V, Vp ≤ 600V
Rg = 10, VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 773 — J TJ = 175°C
trr Diode Reverse Recovery Time — 102 — ns
VCC = 400V,IF = 24A,VGE = 15V,
Irr Peak Reverse Recovery Current — 32 — A RG = 10, L = 210H
Notes:
V
CC = 80% (VCES), VGE = 20V, L = 210µH, RG = 50.
Pulse width limited by max. junction temperature.
R
is measured at TJ of approximately 90°C.
Maximum limits are based on statistical sample size characterization.
AUIRGB/S/SL4062D1
3 2017-08-31
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
25 50 75 100 125 150 175
TC (°C)
0
10
20
30
40
50
60
70
IC (A)
25 50 75 100 125 150 175
TC (°C)
0
50
100
150
200
250
300
Ptot (W)
1 10 100 1000
VCE (V)
0.1
1
10
100
IC (A)
1msec
10µsec
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
10 100 1000
VCE (V)
1
10
100
1000
IC (A)
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
Fig. 2 - Power Dissipation vs.
Case Temperature
0 1 2 3 4 5 6 7 8 9 10
VCE (V)
0
20
40
60
80
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
0 2 4 6 8 10
VCE (V)
0
10
20
30
40
50
60
70
80
90
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
AUIRGB/S/SL4062D1
4 2017-08-31
012345678910
VCE (V)
0
20
40
60
80
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 11V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF (V)
0
20
40
60
80
100
IF (A)
TJ = -40°C
TJ = 25°C
TJ =175°C
5101520
VGE (V)
0
2
4
6
8
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
5101520
VGE (V)
0
2
4
6
8
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
Fig. 8 - Typ. Diode Forward Characteristics
tp = 20µs
5101520
VGE (V)
0
2
4
6
8
VCE (V)
ICE = 12A
ICE = 24A
ICE = 48A
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
246810121416
VGE, Gate-to-Emitter Voltage (V)
0
20
40
60
80
100
IC, Collector-to-Emitter Current (A)
TJ = 25°C
TJ = 175°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
AUIRGB/S/SL4062D1
5 2017-08-31
0 1020304050
IC (A)
0
500
1000
1500
2000
2500
Energy (µJ)
EOFF
EON
010 20 30 40 50
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0 20406080100120
RG ()
0
400
800
1200
1600
2000
Energy (µJ)
EOFF
EON
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
020 40 60 80 100
RG ()
1
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
10 15 20 25 30 35 40 45 50
IF (A)
5
10
15
20
25
30
35
IRR (A)
RG = 22
RG = 47
RG = 10
RG = 100
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
020 40 60 80 100
RG (
10
15
20
25
30
35
IRR (A)
Fig. 18 Typ. Diode IRR vs. RG
TJ = 175°C
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 24A; VGE = 15V
AUIRGB/S/SL4062D1
6 2017-08-31
0200 400 600 800 1000 1200
diF /dt (A/µs)
15
20
25
30
35
IRR (A)
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
200 400 600 800 1000 1200
diF /dt (A/µs)
1000
2000
3000
4000
5000
6000
QRR (nC)




12A
48A
24A
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
10 20 30 40 50
IF (A)
0
500
1000
1500
2000
Energy (µJ)
RG = 10
RG = 22
RG = 47
RG = 100
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
8 1012141618
VGE (V)
0
4
8
12
16
Time (µs)
50
100
150
200
250
Current (A)
Tsc
Isc
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
0100 200 300 400 500
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
0 102030405060
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES = 400V
VCES
= 300V
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 24A; L = 585µH
AUIRGB/S/SL4062D1
7 2017-08-31
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
Ri (°C/W) i (sec)
0.0347 0.00003
0.2531 0.00209
0.1721 0.01166
0.1519 0.00007
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.0296 0.00003
0.4840 0.00353
0.2576 0.01971
0.4307 0.00028
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
AUIRGB/S/SL4062D1
8 2017-08-31
L
Rg
80 V
DUT VCC
+
-
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.3 - S.C. SOA Circuit
AUIRGB/S/SL4062D1
9 2017-08-31
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
-10
0
10
20
30
40
50
60
-100
0
100
200
300
400
500
600
-0.3 -0.05 0.2 0.45 0.7
I
CE
(A)
V
CE
(V)
time(µs)
90% I
CE
5% V
CE
10% I
CE
Eoff Loss
tf
-10
0
10
20
30
40
50
60
-100
0
100
200
300
400
500
600
-0.3 -0.05 0.2 0.45 0.7
I
CE
(A)
V
CE
(V)
time (µs)
TEST
CURRENT
90%
I
CE
5% V
CE
10%
I
CE
tr
Eon Loss
-35
-28
-21
-14
-7
0
7
14
21
28
35
-0.250.000.250.50
I
F
(A)
time (µS)
Peak
I
RR
t
RR
Q
RR
-100
0
100
200
300
400
500
-100
0
100
200
300
400
500
-202468
Ice (A)
Vce (V)
Time (uS)
VCE
ICE
AUIRGB/S/SL4062D1
10 2017-08-31
TO-220AB Package Outline
(Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
YWWA
XX XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
AUIRGB4062D1
Lot Code
Part Number
IR Logo
TO-220AC package is not recommended for Surface Mount Application.
AUIRGB/S/SL4062D1
11 2017-08-31
D2 Pak (TO-263AB) Package Outline
(Dimensions are shown in millimeters (inches))
D2 Pak (TO-263AB) Part Marking Information
YWWA
XX XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
AUIRGS4062D1
Lot Code
Part Number
IR Logo
AUIRGB/S/SL4062D1
12 2017-08-31
TO-262 Package Outline
(Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
YWWA
XX XX
Date Code
Y = Year
WW = Work Week
A = Automotive, Lead Free
AUIRGSL4062D1
Lot Code
Part Number
IR Logo
AUIRGB/S/SL4062D1
13 2017-08-31
D2Pak Tape & Reel Information
(Dimensions are shown in millimeters (inches))
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AUIRGB/S/SL4062D1
14 2017-08-31
† Highest passing voltage.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
This part number(s) passed Automotive qualification. Infineon’s Industrial
and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level
3L-TO-220
3L-TO-262
3L-D2 PAK MSL1
ESD
Machine Model Class M4(+/‐700V)†
AEC-Q101-002
Human Body Model Class H1C(+/‐2000V)†
AEC-Q101-001
Charged Device Model Class C5 (+/‐2000V)†
AEC-Q101-005
RoHS Compliant Yes
N/A
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
8/31/2017  Updated datasheet with corporate template
 Corrected part marking on pages 10,11, 12