Product Datasheet Search Results:
2 Pages, 121 KB, Scan- IRFF430
- General Electric
- Power Transistor Data Book 1985
5 Pages, 184 KB, Scan- IRFF430
- Harris Semiconductor
- Power MOSFET Data Book 1990
5 Pages, 193 KB, Scan- IRFF430R
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 1125 KB, Original- IRFF430
- Infineon Technologies Ag
- Trans MOSFET N-CH 500V 2.5A 3-Pin TO-39
7 Pages, 324 KB, Original- IRFF430
- Intersil Corporation
- 2.75A, 500V, 1.500 ?, N-Channel Power MOSFET
7 Pages, 129 KB, Original- IRFF430
- International Rectifier
- 2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
7 Pages, 129 KB, Original- IRFF430PBF
- International Rectifier
- 2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
1 Pages, 48 KB, Original- IRFF430R
- International Rectifier
- Rugged Series Power MOSFETs - N-Channel
2 Pages, 19 KB, Original- IRFF430
- Semelab Plc.
- 2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Product Details Search Results:
Infineon.com/IRFF430
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"25(W)","Continuous Drain Current":"2.5(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"500(V)","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-39","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...
1440 Bytes - 13:23:25, 06 October 2024
Irf.com/IRFF430
{"Terminal Finish":"TIN LEAD","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.3500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.72 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"11 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min...
1455 Bytes - 13:23:25, 06 October 2024
Irf.com/IRFF430PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.3500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.72 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"11 A","Channel Type":"N-CHANNEL","FET Technology":"MET...
1521 Bytes - 13:23:25, 06 October 2024
Semelab.co.uk/IRFF430
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"11 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"0.3500 mJ","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL ...
1385 Bytes - 13:23:25, 06 October 2024
Semelab.co.uk/IRFF430-JQR-B
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Mfr Package Description":"HERMETIC SEALED, TO-39, 3 PIN","Pulsed Drain Current-Max (IDM)":"11 A","Terminal Form":"WIRE","Operating Mode":"ENHANCEMENT","Package Style":"CYLINDRICAL","Avalanche Energy Rating (Eas)":"0.3500 mJ","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL ...
1423 Bytes - 13:23:25, 06 October 2024
Semelab.co.uk/IRFF430-JQR-BR1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.3500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.72 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"11 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...
1484 Bytes - 13:23:25, 06 October 2024
Semelab.co.uk/IRFF430R1
{"Terminal Finish":"TIN SILVER COPPER","Terminal Form":"WIRE","Avalanche Energy Rating (Eas)":"0.3500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"1.72 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"11 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICON...
1447 Bytes - 13:23:25, 06 October 2024
Various/IRFF430R
{"C(iss) Max. (F)":"600p","Absolute Max. Power Diss. (W)":"25","V(BR)DSS (V)":"500","g(fs) Max, (S) Trans. conduct,":"2.5","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"55n","r(DS)on Max. (Ohms)":"1.5","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"11","I(GSS) Max. (A)":"100n","g(fs) Min. (S) Trans. conduct.":"1.5","V(BR)GSS (V)":"20","@I(D) (A) (Test Condition)":"1.5","@Freq. (Hz) (Test Condition)":"1M","V(GS)th Max. (V)":"4","V(GS)th Min. (V)":"2","Package":"TO-205AF","M...
1263 Bytes - 13:23:25, 06 October 2024
