Product Datasheet Search Results:
5 Pages, 196 KB, Scan- IRF9240
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 63 KB, Original- IRF9240
- Intersil Corporation
- -11A, -200V, 0.500 ?, P-Channel Power MOSFET
7 Pages, 147 KB, Original- IRF9240
- International Rectifier
- 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
92 Pages, 2885 KB, Scan- IRF9240E
- International Rectifier
- 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
92 Pages, 2885 KB, Scan- IRF9240EA
- International Rectifier
- 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
92 Pages, 2885 KB, Scan- IRF9240EAPBF
- International Rectifier
- 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
92 Pages, 2885 KB, Scan- IRF9240EB
- International Rectifier
- 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
92 Pages, 2885 KB, Scan- IRF9240EBPBF
- International Rectifier
- 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
92 Pages, 2885 KB, Scan- IRF9240EC
- International Rectifier
- 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
92 Pages, 2885 KB, Scan- IRF9240ECPBF
- International Rectifier
- 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
92 Pages, 2885 KB, Scan- IRF9240ED
- International Rectifier
- 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
92 Pages, 2885 KB, Scan- IRF9240EDPBF
- International Rectifier
- 11 A, 200 V, 0.58 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
Product Details Search Results:
Irf.com/IRF9240
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1491 Bytes - 22:44:10, 15 December 2024
Irf.com/IRF9240E
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1428 Bytes - 22:44:10, 15 December 2024
Irf.com/IRF9240EA
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1433 Bytes - 22:44:10, 15 December 2024
Irf.com/IRF9240EAPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1501 Bytes - 22:44:10, 15 December 2024
Irf.com/IRF9240EB
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1434 Bytes - 22:44:10, 15 December 2024
Irf.com/IRF9240EBPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1503 Bytes - 22:44:10, 15 December 2024
Irf.com/IRF9240EC
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1436 Bytes - 22:44:10, 15 December 2024
Irf.com/IRF9240ECPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1499 Bytes - 22:44:10, 15 December 2024
Irf.com/IRF9240ED
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Mi...
1434 Bytes - 22:44:10, 15 December 2024
Irf.com/IRF9240EDPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1503 Bytes - 22:44:10, 15 December 2024
Irf.com/IRF9240EPBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1495 Bytes - 22:44:10, 15 December 2024
Irf.com/IRF9240PBF
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"PIN/PEG","Avalanche Energy Rating (Eas)":"500 mJ","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"11 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.5800 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"44 A","Channel Type":"P-CHANNEL","FET Technology":"ME...
1559 Bytes - 22:44:10, 15 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF9204.pdf | 0.27 | 1 | Request |
