Rugged Power MOSFETs IRF9240, IRF9241 IRF9242, IRF9243 File Number 2279 Avalanche-Energy-Rated P-Channel Power MOSFETs TERMINAL DIAGRAM -9 A and -11 A, -150 V and -200 V loston = 0.5 Q and 0.70 D Features: a Single pulse avalanche energy rated SOA is power-dissipation limited eC Nanosecond switching speeds Linear transfer characteristics . . . 8s High input impedance 9208-43262 P-CHANNEL ENHANCEMENT MODE The iRF9240, IRF9241, IRF9242, andIRF9243 are advanced power MOSFETs designed, tested, and guaranteed to with- TERMINAL DESIGNATION stand a specified level of energy in the breakdown ava- lanche mode of operation. These are p-channel enhance- SOURCE (rence } ment-mode silicon-gate power field-effect transistors \ designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- oO ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. GATE 92cs-37801 The IRF-types are supplied in the JEDEC TO-204AA steel package. JEDEC TO-204AA ABSOLUTE-MAXIMUM RATINGS CHARACTERISTIC IRF9240 IRF9241 | IRF9242 IRF9243 UNITS Drain-Source Voltage @ Vos -200 -150 -200 -150 Vv Drain-Gate Voltage (Res = 20 kN) O Vor -200 -150 -200 -150 Vv Continuous Drain Current lo @ Te = 25C -11 11 9 -9 A Continuous Drain Current lo @ Tc = 100C 7 7 6 6 A Pulsed Drain Current @ lom -44 -44 -36 -36 A Gate-Source Voltage Ves +20 Vv Maximum Power Dissipation Po @ Tc = 25C 125 (See Fig. 14) Ww Linear Derating Factor 1 (See Fig. 14) wc Single-Pulse Avalanche Energy Rating @ Eas 790 mJ Operating Junction and Ts Storage Temperature Range Tag, 85 to +150 Cc Lead Temperature 300 (0.063 in. [1.6 mm] from case for 10 s) C 6-356Rugged Power MOSFETs IRF9240, IRF9241 IRF9242, IRF9243 ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25C Unless Otherwise Specified CHARACTERISTIC TYPE MIN. | TYP. | MAX. [UNITS TEST CONDITIONS Drain-Source Breakdown Voltage BVoss | IRF9240 | _ = IRF9242 200 v Vos = OV IRF9241 - _ _ 2H IRF9243 150 Vv |p = -250 pA Gate Threshold Voltage Vesin ALL -2.0 = -4.0 Vv Vos = Ves, lo = -250 vA Gate-Source Leakage Forward less ALL _ -100 nA Vas = -20V Gate-Source Leakage Reverse Ioss ALL = = 100 nA Ves = 20 V Zero-Gate Voltage Drain Current oss ALL = = -250 HA Vos = Max. Rating, Ves = 0 V. ; = = -1000 | yA Vos = Max. Rating x 0.8, Ves = OV, Te = 126C On-State Drain Current @ lptons IRF9240 IRFO241 a Vos > | xn Ves = -10V IRF9242 A os Dion) DSton) max, VGS iRF9243 | 79 = = Static Drain-Source On-State Toston) IRF9240 Resistance @ "| iRFg2ai | | 985 | 95 | 9 IRF9242 Vos = 10V. In = GA iRFg243 | | 955 | O7 | 2 Forward Transconductance @ Qts ALL 4 6 _ S(O) | Vos > lpiow X fostonm max. Ip = -6 A Input Capacitance Ciss ALL _ 1100 _ pF - -. = Output Capacitance Coss ALL _ 375 _ pF a re v oO 25 V, f= 1.0 MHz Reverse Transfer Capacitance Cras ALL _ 150 _ pF 9. Turn-On Delay Time tatont ALL _ 18 22 ns Voo = 100 V, Ip = -11 A, 20 = 9.1.2 Rise Time t ALL _ 45 68 ns See Fig. 17 Turn-Off Deiay Time taront ALL 75 90 ns (MOSFET switching times are essentially Fall Time tr ALL 29 44 ns independent of operating temperature.) Total Gate Charge Qs AL | 70 | 90 | nc | Ves=-18V, Io = -11 A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) " See Fig. 18 for test circuit. (Gate charge is Gate-Source Charge Qss ALL = 55 83 nc essentially independent of operating Gate-Drain (Miller) Charge Qya ALL _ 15 23 nc | temperature.) Internal Drain Inductance Lo ALL _ 5.0 _ nH Measured between the Modified MOSFET contact screw on header | symbol showing the that is closer to source internal device and gate pins and center | inductances. ? of die. interna! Source Inductance Ls ALL _ 12.5 _ nH Measured from the source pin, 6 mm GO (0.25 in.) from header and source bonding pad. s Junction-to-Case Rasc ALL _ 1 C/W Case-to-Sink Recs ALL _ 0.1 = C/W | Mounting surface flat, smooth, and greased. Junction-to-Ambient Raa ALL = 30 C/W | Typical socket mount. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current Is IRF9240 1" A Modified MOSFET symbo! . (Body Diode) IRF9241 ~ ~ ~ showing the integral IRF9242 reverse P-N junction rectifier. inroza3 | ~ | ~ | 9 | A Pulse Source Current lsu IRF9240 44 A 6O (Body Diode) @ IRF9241 ~~ 7 ~ IRF9242 inro24g | ~~ | ~ | 6 | A . Diode Forward Voltage @ Vso IRF9240 - - = IRF9241 _ _ -1.5 Vv Tc = 26C, Is = -11 A, Ves =O V IRF9242 - = = IRF9243 - _ -1.5 Vv Tc = 25C, Is = -9 A, Vas =O V Reverse Recovery Time te ALL _ 270 = ns Ts = 150C, lp = -11 A, die/dt = 100 A/ys Reverse Recovered Charge Qrr ALL 2 uc Ty = 150C, Ip = -11 A, dle/dt = 100 A/us . . Intrinsic turn-on time is negligible. Forward Turn-on Time ton ALL Turn-on speed is substantially controlled by is + Lo. @ Ty = 25C to 180C. @ Repetitive Rating: Pulse width limited by @ Voo = 50 V, Starting T, = 25C, L = 9.8 mH, @ Pulse Test: Pulse width < 300 ys, max. junction temperature. See Transient Re = 25 Q, Peak I. = 11 A (See Figs. 15 & 16). Duty Cycle = 2%. Thermal Impedance Curve (Fig. 5). 6-357Rugged Power MOSFETs IRF9240, IRF9241- IRF9242, IRF9243 Jp. DRAIN CURRENT (AMPERES) 0 10 -20 -30 -40 gs. DRAIN-TO-SQURCE VOLTAGE (VOLTS) Fig. 1 - Typical output characteristics. 80 us PULSE TEST Ip. OAAIN CURRENT (AMPERES) a 2 -4 -6 & Vos. ORAIN TO-SOURCE VOLTAGE {VDLTS) Fig. 3 - Typical saturation characteristics. NCE (PER UNIT) o o So zm = ue a 2 Nw NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDA 2 & ZinsclU/Pinsc. o 3 es ~2 Se & 2 5 wt 2 5 193 -$0 2 1p. DRAIN CURRENT (AMPERES) tp, ORAIN CURRENT (AMPERES) 2 PULSE Vos. * Rostonimax. 0 2 4 6 a4 10 Vgs. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 2 - Typical transfer characteristics. 08 To = 25C Ty = 150C Fine = 1.0 KW 702 SINGLE PULSE 01 -t0 -2 -5 -10 -20 -50-100 -200 -500 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 92GS-44109 Fig. 4 - Maximum sate operating area. PL Lot) of po 12 o} 1. OUTY FACTOR, 0 = z 2. PER UNIT BASE = Rug * 1.6 DEG. COW. 3. Tae -Te* Pom Zinc. 10! 2 5 10 2 5 ow ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 - M effective thermal i di junction-to-case vs. julse duration. 6-358Rugged Power MOSFETs PULSE Sts, TRANSCONDUCTANCE (SIEMENS) Vos: > !Dton) * Fastonimax. 0 +10 -20 30 -40 60 Ip. ORAIN CURRENT (AMPERES) Fig. 6 - Typical transconductance vs. drain current. 1.15 1,10 41.05 1.00 0.96 0.90 BVggs. ORAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZEQ) 0.85 -80 40 Qo at 80 120 160 Ty. JUNCTION TEMPERATURE (C) Fig. 8 - Breakdown voltage vs. temperature. 2000 + Cyg. Cas SHORTED Coa 1600 Cg, C, > Cag P 8 gs gd = Cas * cu 3 3 a 0 So oe C, CAPACITANCE (pF) 400 0 19 20 30 40 50 Vpg. ORAIN TO SOURCE VOLTAGE (VOLTS) Fig. 10 - Typical capacitance vs. drain-to-source voltage. NEGATIVE Ipg, REVERSE ORAIN CURRENT IRF9240, IRF9241 IRF9242, IRF9243 ~100 Ty = 180C T)=25C (AMPERES) ~0.1 -0.4 -06 -0.86 -10 -1.2 -14 -16 -1.8 NEGATIVE Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 92GS-44170 Fig. 7 - Typical source-drain diode forward voltage. 25 x > wn Vgs -10V Ip = -5.5A Aps(on). ORAIN-TO-SOURCE ON RESISTANCE (NORMALIZEO} e wn -40 a 40 30 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 9 - Normalized on-resistance vs. temperature. Ip = -148 TEST SEE FIGURE 18 Vg. GATE-TO-SOURCE VOLTAGE (VOLTS) 20 4 60 80 Gy, TOTAL GATE CHARGE {nC} Fig. 11 - Typical gate charge vs. gate-to-source voltage. 6-359Rugged Power MOSFETs IRF9240, IRF9241 IRF9242, IRF9243 6-360 o o o o oe = wn a ~ oo S Rosion). ORAIN TO-SOURCE ON RESISTANCE (OHMS) Ros(any MEASURED WITH PULSE OF 5 us PULSE DURATION. INITIAL Ty = 259C (HEATING EFFECT OF 5 ws PULSE IS MINIMAL.) 0 10-2000 30-40-80 60-70 Ip. DRAIN CURRENT (AMPERES) Fig. 12 - Typical on-resistance vs. drain current. 150 s Ss Zs 3 Pp. POWER DISSIPATION (WATTS) 0 50 100 150 Tc, CASE TEMPERATURE (C) Fig. 14 - Power vs. temperature derating curve. Ro tp Ag VARY tp TO OBTAIN REQUIRED PEAK I, 92C5-43280 Fig. 17 - Switching time test circuit. 3 i 1RF9240,924 $RF9242,9243 N RQ \ {p, ORAIN CURRENT (AMPERES) on 0 50 100 160 To, CASE TEMPERATURE (C) Fig. 13 - Maximum drain current vs. case temperature. vos L our Yoo Rg 5 LT u e018 VARY ty, TO OBTAIN REQUIRED PEAK I, = 9208-43278 Fig. 15 - Unclamped inductive test circuit. 8Voss 92C$-43279 Fig. 16 - Unclamped inductive waveforms. CURRENT ~Vos REGULATOR 5~O (ISOLATED SUPPLY) SAME TYPE AS DUT 4 | j ~t.5mA FT A-O +Vps, Ig lp CURRENT CURRENT SAMPLING SAMPLING RESISTOR RESISTOR 9208-43281 Fig. 18 - Gate charge test circuit.