Product Datasheet Search Results:
9 Pages, 518 KB, Original- IRF1302
- International Rectifier
- HEXFET Power MOSFET
11 Pages, 228 KB, Original- IRF1302L
- International Rectifier
- HEXFET Power MOSFET
11 Pages, 320 KB, Original- IRF1302LPBF
- International Rectifier
- 174 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 Pages, 228 KB, Original- IRF1302LTRL
- International Rectifier
- 75 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 Pages, 228 KB, Original- IRF1302LTRLPBF
- International Rectifier
- 75 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 Pages, 228 KB, Original- IRF1302LTRR
- International Rectifier
- 75 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
11 Pages, 228 KB, Original- IRF1302LTRRPBF
- International Rectifier
- 75 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
9 Pages, 518 KB, Original- IRF1302PBF
- International Rectifier
- IRF1302PBF
12 Pages, 218 KB, Original- IRF1302S
- International Rectifier
- MOSFET N-CH 20V 174A D2PAK - IRF1302S
12 Pages, 218 KB, Original- IRF1302SPBF
- International Rectifier
- 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF1302S with Lead Free Packaging
12 Pages, 255 KB, Original- IRF1302STRL
- International Rectifier
- 75 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET
12 Pages, 255 KB, Original- IRF1302STRLPBF
- International Rectifier
- 75 A, 20 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Irf.com/IRF1302LPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"174 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-...
1585 Bytes - 04:49:57, 16 November 2024
Irf.com/IRF1302LTRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1512 Bytes - 04:49:57, 16 November 2024
Irf.com/IRF1302LTRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-C...
1581 Bytes - 04:49:57, 16 November 2024
Irf.com/IRF1302LTRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR...
1507 Bytes - 04:49:57, 16 November 2024
Irf.com/IRF1302LTRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-C...
1579 Bytes - 04:49:57, 16 November 2024
Irf.com/IRF1302PBF
927 Bytes - 04:49:57, 16 November 2024
Irf.com/IRF1302S
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"174A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-263","Product Training Modules":"Discrete Power MOSFETs 40V and Below","Rds On (Max) @ Id, Vgs":"4 mOhm @ 104A, 10V","Datasheets":"IRF1302S(L)","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"50","Drain ...
1772 Bytes - 04:49:57, 16 November 2024
Irf.com/IRF1302STRL
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1530 Bytes - 04:49:57, 16 November 2024
Irf.com/IRF1302STRLPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"...
1616 Bytes - 04:49:57, 16 November 2024
Irf.com/IRF1302STRR
{"Terminal Finish":"TIN LEAD","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"EOL/LIFEBUY","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","D...
1528 Bytes - 04:49:57, 16 November 2024
Irf.com/IRF1302STRRPBF
{"Terminal Finish":"MATTE TIN OVER NICKEL","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"350 mJ","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"75 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0040 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"700 A","Channel Type":"...
1614 Bytes - 04:49:57, 16 November 2024
