Product Datasheet Search Results:
5 Pages, 168 KB, Scan- IRF120
- Fairchild Semiconductor
- N-Channel Power MOSFETs, 11 A, 60-100 V
5 Pages, 168 KB, Scan- IRF120-123
- Fairchild Semiconductor
- N-Channel Power MOSFETs 11 A 60-100 V
4 Pages, 200 KB, Original- IRF120
- Fci Semiconductor
- POWER MOSFETs
4 Pages, 200 KB, Original- IRF120
- Frederick Components
- Power MOSFET Selection Guide
5 Pages, 162 KB, Scan- IRF120
- General Electric Solid State
- N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A.
5 Pages, 168 KB, Scan- IRF120
- Harris Semiconductor
- Power MOSFET Data Book 1990
7 Pages, 48 KB, Original- IRF120
- Intersil Corporation
- 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 ?, N-Channel, Power MOSFETs
1 Pages, 50 KB, Scan- IRF120
- International Rectifier
- 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
3 Pages, 38 KB, Original- IRF1205
- International Rectifier
- HEXFET Power Mosfet
5 Pages, 214 KB, Scan- IRF120
- Samsung Electronics
- N-CHANNEL POWER MOSFETS
Product Details Search Results:
Irf.com/IRF120
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Pulsed Drain Current-Max (IDM)":"37 A","Terminal Form":"PIN\/PEG","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"9.2 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Drain-sourc...
1319 Bytes - 23:28:36, 22 September 2024
