IRF1205
HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 0.027Ω
ID = 41A
Description
lAdvanced Process Technology
lDynamic dv/dt Rating
l175 °C Operating Temprature
lFast Switching
lFully Avalanche Rated
Fifth Generation MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET® power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universely preferred for all
commercial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
11/3/99
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 41
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 A
IDM Pulsed Drain Current 164
PD @TC = 25°C Power Dissipation 83 W
Linear Derating Factor 0.56 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy190 mJ
IAR Avalanche Current25 A
EAR Repetitive Avalanche Energy8.3 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.8
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
Thermal Resistance
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PROVISIONAL
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
S
D
G
TO-220AB
PD - 93803
IRF1205
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PROVISIONAL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS =25A, VGS = 0V
trr Reverse Recovery Time ––– 63 94 ns TJ = 25°C, IF = 25A
Qrr Reverse RecoveryCharge 140 210 nC di/dt = 100A/µs
t
on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
41
164
Notes:
VDD=25V, Starting TJ = 25°C, L = 610 µH
RG = 25Ω, IAS = 25A
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤25A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C Use IRFR/U1205 Data and Test conditons.
Pulse width ≤ 300µs; duty cycle ≤ 2%
Calculated continuous current based on maximum allowable junction
temperature: Package limitation current = 20A
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.05 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.027 ΩVGS = 10V, ID = 25A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS = VGS, ID = 250µA
gfs Forward Transconductance 13 ––– ––– S VDS = 25V, ID = 25A
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 50 ID = 25A
Qgs Gate-to-Source Charge ––– ––– 10 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– –– – 21 VGS = 10V
td(on) Turn-On Delay Time ––– 9.9 ––– VDD = 28V
trRise Time ––– 44 ––– ID = 25A
td(off) Turn-Off Delay Time ––– 34 – –– RG = 9.1Ω
tfFall Time ––– 35 ––– RD = 1.1Ω
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
C
iss Input Capacitance ––– 1200 ––– VGS = 0V
Coss Output Capacitance ––– 390 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz
nH
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
S
D
G
S
D
G
IRF1205
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PROVISIONAL
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 11/99
LEAD AS SIG NM ENTS
1 - GA TE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0 .93 (.037)
0 .69 (.027)
4 .06 (.160)
3 .55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3 .78 (.149)
3 .54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2 .87 (.113)
2 .62 (.103)
1 5.24 (.600)
1 4.84 (.584)
1 4.09 (.555)
1 3.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2 .54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 D IMENSIO N ING & TOLERAN CING PER ANSI Y14.5M, 1982. 3 OU TLINE CO NF O RMS TO JED EC O U TLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HE ATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
PART NU MB ER
INTERNATIONAL
RE CTIFIER
LOGO
EXA MPLE : THIS IS AN IR F1010
W ITH A SSEMBLY
LOT CODE 9B 1M
ASSEMBLY
LOT C ODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9 B 1M
A
