Product Datasheet Search Results:
11 Pages, 295 KB, Original- IRF1010NSPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK Tube
12 Pages, 303 KB, Original- IRF1010NSTRLPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R
11 Pages, 295 KB, Original- IRF1010NSTRRPBF
- Infineon Technologies Ag
- Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R
11 Pages, 154 KB, Original- IRF1010NS
- International Rectifier
- MOSFET N-CH 55V 85A D2PAK - IRF1010NS
10 Pages, 277 KB, Original- IRF1010NS-L
- International Rectifier
- HEXFET Power Mosfet
11 Pages, 295 KB, Original- IRF1010NSPBF
- International Rectifier
- MOSFET N-CH 55V 85A D2PAK - IRF1010NSPBF
11 Pages, 136 KB, Original- IRF1010NSTRL
- International Rectifier
- MOSFET N-CH 55V 85A D2PAK - IRF1010NSTRL
11 Pages, 295 KB, Original- IRF1010NSTRLPBF
- International Rectifier
- MOSFET N-CH 55V 85A D2PAK - IRF1010NSTRLPBF
11 Pages, 295 KB, Original- IRF1010NSTRLPBF-EL
- International Rectifier
- Trans MOSFET N-CH 55V 85A 3-Pin(2+Tab) D2PAK T/R
11 Pages, 136 KB, Original- IRF1010NSTRR
- International Rectifier
- MOSFET N-CH 55V 85A D2PAK - IRF1010NSTRR
11 Pages, 295 KB, Original- IRF1010NSTRRPBF
- International Rectifier
- MOSFET N-CH 55V 85A D2PAK - IRF1010NSTRRPBF
Product Details Search Results:
Infineon.com/IRF1010NSPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"85(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Rail/Tube","Power Dissipation":"180(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1511 Bytes - 17:17:58, 03 December 2024
Infineon.com/IRF1010NSTRLPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"85(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"180(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1578 Bytes - 17:17:58, 03 December 2024
Infineon.com/IRF1010NSTRRPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"85(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"180(W)","Operating Temp Range":"-55C to 175C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...
1526 Bytes - 17:17:58, 03 December 2024
Irf.com/IRF1010NS
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRF1010NS Saber Model IRF1010NS Spice Model","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"50","Supplier Device Package":"D2PAK","Datasheets":"IRF1010NS(L)","Rds On (Max) @ Id, Vgs":"11 mOhm @ 43A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"180W","Other Names":"*IRF1010NS","Package / Case":"TO...
1676 Bytes - 17:17:58, 03 December 2024
Irf.com/IRF1010NSPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"85A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"11 mOhm @ 43A, 10V","Datasheets":"IRF1010N(S,L)PbF","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packag...
1845 Bytes - 17:17:58, 03 December 2024
Irf.com/IRF1010NSTRL
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRF1010NS Saber Model IRF1010NS Spice Model","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF1010NS(L)","Rds On (Max) @ Id, Vgs":"11 mOhm @ 43A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"180W","Package / Case":"TO-263-3, D\u00b...
1686 Bytes - 17:17:58, 03 December 2024
Irf.com/IRF1010NSTRLPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"85A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-263","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"11 mOhm @ 43A, 10V","Datasheets":"IRF1010N(S,L)PbF","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packag...
2013 Bytes - 17:17:58, 03 December 2024
Irf.com/IRF1010NSTRLPBF-EL
{"Category":"MOSFET","Maximum Drain Source Voltage":"55 V","Typical Rise Time":"76 ns","Typical Turn-Off Delay Time":"39 ns","Description":"Value","Maximum Continuous Drain Current":"85 A","Package":"3D2PAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"13 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 175 \u00b0C","RDS-on":"11@10V mOhm","Manufacturer":"International Rectifier","Typical Fall Time":"48 ns"}...
1411 Bytes - 17:17:58, 03 December 2024
Irf.com/IRF1010NSTRR
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Design Resources":"IRF1010NS Saber Model IRF1010NS Spice Model","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"HEXFET\u00ae","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF1010NS(L)","Rds On (Max) @ Id, Vgs":"11 mOhm @ 43A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"180W","Package / Case":"TO-263-3, D\u00b...
1686 Bytes - 17:17:58, 03 December 2024
Irf.com/IRF1010NSTRRPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"85A (Tc)","Gate Charge (Qg) @ Vgs":"120nC @ 10V","Product Photos":"TO-263","PCN Assembly/Origin":"Warehouse Transfer 29/Jul/2015","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"11 mOhm @ 43A, 10V","Datasheets":"IRF1010N(S,L)PbF"...
1910 Bytes - 17:17:58, 03 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| IRF1010NS.pdf | 0.15 | 1 | Request |
