Datasheet.Directory

{"Gate-Emitter Leakage Current":"400 nA","Continuous Collector Current at 25 C":"1300 A","Product Category":"IGBT Modules","Factory Pack Quantity":"2","Brand":"Infineon Technologies","Pd - Power Dissipation":"6.6 kW","Collector-Emitter Saturation Voltage":"2.6 V","Collector- Emitter Voltage VCEO Max":"1700 V","Product":"IGBT Silicon Modules","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"IHM","Configuration":"Dual Common Emitter ...

{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Terminal Finish":"MATTE TIN","Package Body Material":"UNSPECIFIED","Mfr Package Description":"MODULE-7","Terminal Form":"UNSPECIFIED","Package Style":"FLANGE MOUNT","Turn-off Time-Nom (toff)":"1220 ns","Collector-emitter Voltage-Max":"1700 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"1300 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"440 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package S...