Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package / Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"7A (Tc)","Gate Charge (Qg) @ Vgs":"8.2nC @ 10V","Product Photos":"TO-220-3","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"410 mOhm @ 3.5A, 10V","Datasheets":"FQP7P06 TO220B03 Pkg Drawing","FET Type":"MOSFET P-Channel, Metal Oxide","PCN Packaging":"Tape and Box/Reel Barcode U...

{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"TO-220, 3 PIN","Pulsed Drain Current-Max (IDM)":"28 A","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Avalanche Energy Rating (Eas)":"90 mJ","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"7 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PU...

{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b125(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"7(A)","Mounting":"Through Hole","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"60(V)","Packaging":"Rail/Tube","Power Dissipation":"45(W)","Rad Hardened":"No","Package Type":"TO-220","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...