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FQP7P06 P-Channel MOSFET
FQP7P06
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Thermal Characteristi cs
Symbol Parameter FQP7P06 Unit
VDSS Drain-Source Volt age -60 V
IDDrain Current - Continuous (TC = 25°C) -7.0 A
- Continuous (TC = 100°C) -4.95 A
IDM Drain Current - Pulsed (Note 1) -28 A
VGSS Gate-Source Voltage ± 25 V
EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ
IAR Avalanche Current (Note 1) -7.0 A
EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns
PDPower Dissipation (TC = 25°C) 45 W
- Derate above 25°C 0.3 W/°C
TJ, TSTG Operating and Storage Temperat ure Range -55 to +175 °C
TLMaximum lead temperature for soldering purposes,
1/8" from case for 5 seconds 300 °C
Symbol Parameter Typ Max Unit
RθJC Thermal Resistance, Junction-to-Case -- 3.35 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
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S
D
G
TO-220
GSD
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
•-7 A, -60 V, RDS(on)=410 mΩ(Max.) @VGS=-10 V, ID=-3.5 A
•Low Gate Charge (Typ. 6.3 nC)
•Low Crss (Typ. 25 pF)
•100% Avalanche Tested
March 2013
P-Channel QFET® MOSFET
-60 V, -7 A, 410 mΩ
•175°C Maximum Junction Temperature Rating
©2001 Fairchild Semiconductor Corporation
FQP7P06 Rev. C0
www.fairchildsemi.com
Elerical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.1mH, IAS = -7.0A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -7.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pu lse width ≤300µs, Duty cycle ≤2%
5. Essentially independent of operating temperature
Symbol Parame ter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-60 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = -250 µA, Referenced to 25°C -- -0.07 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = -60 V, VGS = 0 V -- -- -1 µA
VDS = -48 V, TC = 150°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA
On Characteri st ics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-2.0 -- -4.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = -10 V, ID = -3.5 A -- 0.32 0.41 Ω
gFS Forward Transconductance VDS = -30 V, ID = -3.5 A -- 4.0 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 225 295 pF
Coss Output Capacitance -- 110 145 pF
Crss Reverse Transfer Capacit ance -- 2 5 32 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = -30 V, ID = -3.5 A,
RG = 25 Ω
-- 7 25 ns
trTurn-On Rise Time -- 50 1 10 ns
td(off) Turn-Off Dela y Time -- 7 .5 25 ns
tfTurn-Off Fa ll Time -- 25 60 ns
QgTotal Gate Charge VDS = -48 V, ID = -7.0 A,
VGS = -10 V
-- 6.3 8.2 nC
Qgs Gate-Source Charge -- 1.6 -- nC
Qgd Gate-Drain Charge -- 3.1 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- -7.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -28 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, I S = -7.0 A -- -- -4.0 V
trr Reverse Recovery Time VGS = 0 V, I S = -7.0 A,
dIF / dt = 100 A/µs
-- 77 -- ns
Qrr Reverse Recovery Charge -- 0.23 -- µC
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
FQP7P06 P-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQP7P06 Rev. C0
www.fairchildsemi.com
01234567
0
2
4
6
8
10
12
VDS = -30V
VDS = -48V
※ Note : ID = -7.0 A
-VGS , Gate-Source Voltage [V]
QG, To tal Ga t e Charge [nC]
10-1 100101
0
100
200
300
400
500
600 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 M H z
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
10-1
100
101
175℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
25℃
-IDR , Re v e rse Drain C u rren t [A ]
-VSD , Source-Drain Voltage [V]
0 4 8 12 16 20 24
0.0
0.2
0.4
0.6
0.8
1.0
1.2
※ N o te : TJ = 25℃
VGS = - 20V
VGS = - 10V
RDS(on) [Ω],
Drain-Source On-Resistance
-ID , Drain Cu r rent [A ]
246810
10-1
100
101
175℃
25℃
-55℃※ Notes :
1. VDS = -30V
2. 250μs Pulse Test
-ID , Drain Current [A]
-VGS , Gate-Source Voltage [V]
10-1 100101
10-1
100
101
VGS
Top : - 15.0 V
- 10.0 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
※ No tes :
1. 250μs Pulse Test
2. TC = 25℃
-ID, Drain Current [A]
-VDS, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. C apacitance C haracterist ics Figure 6. Ga te Charge Characteris ti cs
Figu re 3. On-R esistance Variat ion vs.
Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Characteri st ic s
FQP7P06 P-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQP7P06 Rev. C0
www.fairchildsemi.com
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
※ No te s :
1 . ZθJC(t) = 3.35 ℃/W M a x .
2 . D uty Fa c to r , D= t 1/t2
3 . TJM - TC = P DM * Z θJC(t)
single pu lse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC
(t), Therm al Response
t1, Sq u a re W ave P u ls e Du ra tio n [s ec ]
25 50 75 100 125 150 175
0
2
4
6
8
-ID, Drain Current [A]
TC, Case Temperature [℃
]
100101102
10-1
100
101
102
DC
10 ms
1 ms 100 µs
Operation in This Area
is Limited by R DS(on)
※ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
-ID, Drain Current [A ]
-VDS, Drain-Source Voltage [V]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
※ Notes :
1. VGS = -10 V
2. ID = -3.5 A
RDS(ON) , (Norm alized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
※ Notes :
1 . VGS = 0 V
2 . ID = -250 μA
-BV DSS , (N orm alize d )
Drain-Sou rce Breakdow n V oltage
TJ, Junction Temperature [oC]
Typical Characteristics (Continued)
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figu re 7. Breakdo w n Vol ta ge Variation
vs. Temperature Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Tr ans ient Ther m al Res pons e Cur ve
t1
PDM
t2
FQP7P06 P-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQP7P06 Rev. C0
www.fairchildsemi.com
Charge
VGS
-10V Qg
Qgs Qgd
-3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
-10V Qg
Qgs Qgd
-3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
VDS
VGS 10%
90%
td(on) tr
ton toff
td(off) tf
VDD
-10V
VDS RL
DUT
RG
VGS
VDS
VGS 10%
90%
td(on) tr
ton toff
td(off) tf
VDD
-10V
VDS RL
DUT
RG
VGS
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
-10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
-10V DUT
RG
LL
ID
ID
t p
Gate Charge Test Circuit & W aveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & W aveforms
FQP7P06 P-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQP7P06 Rev. C0
www.fairchildsemi.com
Peak Diode Recovery dv /d t Test Ci rcuit & Wavefor m s
DUT
VDS
+
_
Driver
RGCompliment of DUT
(N-Channel)
VGS • dv/dt controlled by RG
•I
SD con trolled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
DUT
VDS
+
_
Driver
RGCompliment of DUT
(N-Channel)
VGS • dv/dt controlled by RG
•I
SD con trolled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
D = Gate Pulse Width
Gate Pu lse P eri od
--------------------------
FQP7P06 P-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQP7P06 Rev. C0
www.fairchildsemi.com
FQP7P06 P-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQP7P06 Rev. C0
www.fairchildsemi.com
Dimensions in Millimeters
Mechanical Dimensions
TO-220
FQP7P06 P-Channel MOSFET
©2001 Fairchild Semiconductor Corporation
FQP7P06 Rev. C0
www.fairchildsemi.com
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™
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