FQP7P06_NL - Fairchild Semiconductor

May 2001

QFETTM

FQP7P06

60V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage appl ications such as automotive,

DC/DC converters, and high ef ficiency s witch ing fo r power

management in portable and battery operated products.

Features

• -7A, -60V, RDS(on) = 0.41Ω @VGS = -10 V

• Low gate charge ( typical 6.3 nC)

• Low Crss ( typical 25 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQP7P06 Units

VDSS Drain-Source Voltage -60 V

IDDrain Current - Continuous (TC = 25°C) -7.0 A

- Continuous (TC = 100°C) -4.95 A

IDM Drain Current - Pulsed (Note 1) -28 A

VGSS Gate-Source Voltage ± 25 V

EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ

IAR Avalanche Current (Note 1) -7.0 A

EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/ns

PDPower Dissipation (TC = 25°C) 45 W

- Derate above 25°C 0.3 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 3.35 °C/W

RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

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TO-220

FQP Series

GSD

FQP7P06

Elerical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 2.1mH, IAS = -7.0A, VDD = -25V, RG = 2 5 Ω, Starting TJ = 25°C

3. ISD ≤ -7.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit i ons Min Typ Max Units

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-60 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Vo ltage Temperature

Coefficient ID = -250 µA, Referenced to 25°C -- -0.07 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = -60 V, VGS = 0 V -- -- -1 µA

VDS = -48 V, TC = 150°C -- -- -10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA

On Characteri st ics

VGS(th) Gate Threshold Volt age VDS = VGS, ID = -250 µA-2.0 -- -4.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = -10 V, ID = -3.5 A -- 0.32 0.41 Ω

gFS Forward Transconductance VDS = -30 V, ID = -3.5 A -- 4.0 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

-- 225 295 pF

Coss Output Capacitance -- 110 145 pF

Crss Reverse Transfer Capacit ance -- 25 32 pF

Switching Characteristics

td(on) Turn-On Delay T ime VDD = -30 V, ID = -3.5 A,

RG = 25 Ω

-- 7 25 ns

trTurn-On Rise Time -- 50 110 ns

td(off) Turn-Off De l a y Time -- 7 .5 25 ns

tfTurn -Off Fa ll Time -- 25 60 ns

QgTotal Gate Ch arge VDS = -48 V, ID = -7.0 A,

VGS = -10 V

-- 6.3 8.2 nC

Qgs Gate-Source Charge -- 1.6 -- nC

Qgd Gate-Drain Charge -- 3.1 -- nC

Drain-Source Diode Characteristics and Maximum Rati ngs

ISMaximum Continuous Drain-Source Diode Forward Current -- -- -7.0 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -28 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -7.0 A -- -- -4.0 V

trr Reverse Recovery Time VGS = 0 V, I S = -7.0 A,

dIF / dt = 100 A/µs

-- 77 -- ns

Qrr Reverse Recovery Charge -- 0.23 -- µC

(Note 4)

(Note 4, 5)

(Note 4)

FQP7P06

01234567

VDS = -30V

VDS = -48V

※ Note : ID = -7.0 A

-VGS , Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10-1 100101

100

200

300

400

500

600 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

※ Note s :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

10-1

100

101

175℃

※ Notes :

1. VGS = 0V

2. 250μs Pulse Test

25℃

-IDR , R e v e rse Drain Current [A]

-VSD , Source-Drain Voltage [V]

0 4 8 12 16 20 24

0.0

0.2

0.4

0.6

0.8

1.0

1.2

※ N o te : TJ = 25℃

VGS = - 20V

VGS = - 10V

RDS(on) [Ω],

Drain-Source On-Resistance

-ID , Drain Cu r re n t [A]

246810

10-1

100

101

175℃

25℃

-55℃※ Notes :

1. VDS = -30V

2. 250μs Pulse Test

-ID , Drain Current [A]

-VGS , Gate-Source Voltage [V]

10-1 100101

10-1

100

101

VGS

Top : - 15.0 V

- 10.0 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

Bottom : - 4.5 V

※ No tes :

1. 250μs Pulse Test

2. TC = 25℃

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. C apacitanc e Ch aracterist i cs Figure 6. Ga te Ch arge Cha ra ct eri stics

Figu re 3. On-R esistan ce Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rwa rd Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character i st ic s

FQP7P06

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

※ No tes :

1 . ZθJC(t) = 3.35 ℃/W Ma x .

2 . D u ty F a c to r , D= t 1/t2

3 . TJM - T C = PDM * Z θJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Therm al Response

t1, Sq u a re W a ve P u ls e Du ra tion [s e c]

25 50 75 100 125 150 175

-ID, Drain Current [A]

TC, Case Temperature [℃

]

100101102

10-1

100

101

102

10 ms

1 ms 100 µs

Operation in This Area

is Limited b y R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 175 oC

3. Single Pulse

-ID, Drain C urre nt [A ]

-VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

※ Notes :

1. VGS = -10 V

2. ID = -3.5 A

RDS(ON) , (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1 . VGS = 0 V

2 . ID = -250 μA

-BV DSS , (N orm a liz e d)

Drain-Source Breakdow n Voltage

TJ, Junction Tem perature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Breakdown Voltag e Variation

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Tr ansient Thermal Res pons e Cur ve

PDM

FQP7P06

Charge

VGS

-10V Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

-10V Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS RL

DUT

VGS

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & W aveforms

FQP7P06

Peak Diode Recovery dv/dt Test Circ ui t & Waveform s

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse per iod

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv /dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse per iod

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv /dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

FQP7P06

Package Dimensions

4.50 ±0.20

9.90 ±0.20

1.52 ±0.10

0.80 ±0.10 2.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2.80 ±0.1015.90 ±0.20

10.08 ±0.30 18.95MAX.

(1.70)

(3.70)(3.00)

(1.46)

(1.00)

(45°)

9.20 ±0.2013.08 ±0.20

1.30 ±0.10

1.30 +0.10

–0.05

0.50 +0.10

–0.05

2.54TYP

[2.54 ±0.20]2.54TYP

[2.54 ±0.20]

TO-220

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intended to be an exhaustive list of all su ch trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY A NY LICENSE UNDER ITS PATENT RIGHTS, N OR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devic es or syst em s

which, (a) ar e intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconduct or reserv es the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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