Product Datasheet Search Results:
11 Pages, 814 KB, Original- FDU6N25TU
- Fairchild Semiconductor Corporation
- 4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Product Details Search Results:
Fairchildsemi.com/FDU6N25TU
{"Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"45 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"4.4 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.1 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"18 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"250 V","T...
1479 Bytes - 23:28:47, 03 January 2025
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SSM6N25TU.pdf | 0.15 | 1 | Request |
