FDU6N25TU - Fairchild Semiconductor Corporation

FDD6N25 / FDU6N25 Rev. A

FDD6N25 / FDU6N25 250V N-Channel MOSFET

February 2007

UniFETTM

FDD6N25 / FDU6N25

250V N-Channel MOSFET

Features

• 4.4A, 250V, RDS(on) = 1.1Ω @VGS = 10 V

• Low gate charge ( typical 4.5 nC)

•Low C

rss ( typical 5 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the ava lanche

and commutation mode. These devices are well suited fo r high

efficient switched mode power supplies and active power factor

correction.

Absolute Maximum Ratings

Thermal Characteristics

I-PAK

FDU Series

D-PAK

FDD Series GS

Symbol Parameter FDD6N25 / FDU6N25 Unit

VDSS Drain-Source Voltage 250 V

IDDrain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C) 4.4

2.6 A

IDM Drain Current - Pulsed (Note 1) 18 A

VGSS Gate-Source voltage ±30 V

EAS Single Pulsed Avalanche Energy (Note 2) 45 mJ

IAR Avalanche Current (Note 1) 4.4 A

EAR Repetitive Avalanche Energy (Note 1) 5mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TC = 25°C)

- Derate above 25°C50

0.4 W

W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds 300 °C

Symbol Parameter Typ Max Unit

RθJC Thermal Resistance, Junction-to-Case -- 2.5 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W

2www.fairchildsemi.com

FDD6N25 / FDU6N25 Rev. A

FDD6N25 / FDU6N25 250V N-Channel MOSFET

Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

NOTES:

1. Repetitive Rating: Pulse wi dth limited by maximum junction temperature

2. L = 3.7mH, IAS = 4.4A, VDD = 50V, R G = 25Ω, Starting TJ = 25°C

3. ISD ≤ 4.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FDD6N25 FDD6N25TM D-PAK 380mm 16mm 2500

FDD6N25 FDD6N25TF D-PAK 380mm 16mm 2000

FDU6N25 FDU6N25TU I-PAK - - 70

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 250 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250µA, Referenced to 25°C--0.25--V/°C

IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V

VDS = 200V, TC = 125°C--

-- --

-- 1

10 µA

µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA3.0--5.0V

RDS(on) Static Drain-Source

On-Resistance VGS = 10V, ID = 2.2A -- 0.9 1.1 Ω

gFS Forward Transconductance VDS = 40V, ID = 2.2A (Note 4) -- 5.5 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25V, VGS = 0V,

f = 1.0MHz -- 194 250 pF

Coss Output Capacitance -- 38 50 pF

Crss Reverse Transfer Capacitance -- 5 8 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 125V, ID = 6A

RG = 25Ω

(Note 4, 5)

-- 10 30 ns

trTurn-On Rise Time -- 25 60 ns

td(off) Turn-Off Delay Time -- 7 24 ns

tfTurn-Off Fall Time -- 12 34 ns

QgTotal Gate Charge VDS = 200V, ID = 6A

VGS = 10V

(Note 4, 5)

-- 4.5 6 nC

Qgs Gate-Source Charge -- 1.5 -- nC

Qgd Gate-Drain Charge -- 1.8 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 4.4 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 18 A

VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 4.4A -- - - 1.4 V

trr Reverse Recovery Time VGS = 0V, IS = 6A

dIF/dt =100A/µs (Note 4) -- 145 -- ns

Qrr Reverse Recovery Charge -- 0.55 -- µC

3www.fairchildsemi.com

FDD6N25 / FDU6N25 Rev. A

FDD6N25 / FDU6N25 250V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100101

10-1

100

101

VGS

Top : 15.0 V

10.0 V

8 .0 V

7 .0 V

6 .5 V

6 .0 V

Bottom : 5.5 V

* Notes :

1. 250µs Pulse Te st

2. TC = 25oC

ID, Drain Current [A]

, Drain-Source Voltage [V] 24681012

100

101

150oC

25oC

-55oC

* Notes :

1. VDS = 40V

2. 250µs Pu lse Test

ID, Drain Current [A]

, Gate-Source Voltage [V]

0246810

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

RDS(ON) [Ω], Drain-Source On-Resistance

ID, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

100

101

150oC

* Notes :

1. VGS = 0V

2. 250µs Pulse Test

25oC

IDR, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

10-1 100101

100

150

200

250

300

350

400 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

* Note :

1. V GS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitances [pF]

VDS, Drain-Source Voltage [V] 012345

VDS = 125V

VDS = 50V

VDS = 200V

* Note : ID = 6A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

4www.fairchildsemi.com

FDD6N25 / FDU6N25 Rev. A

FDD6N25 / FDU6N25 250V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temper ature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. V GS = 10 V

2. ID = 2.2 A

RDS(ON), (Normalized)

Drain-Source On-Resist anc e

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

* No tes :

1 . V GS = 0 V

2 . ID = 250µA

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

100101102

10-2

10-1

100

101

100 ms

1 ms

10 ms

100 µs

Operation in This Area

is Limited by R DS(on)

* No tes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 150

ID, Drain Current [A]

TC, Case Temperature [oC]

10-5 10-4 10-3 10-2 10-1 100101

10-1

100

* N o tes :

1 . Z θJC(t) = 2 .5 oC/W M ax.

2 . Du ty Fa c to r, D= t1/t2

3 . T JM - T C = P DM * ZθJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC(t), Ther mal Response

t1, S quare Wave Pulse Duration [sec]

PDM

5www.fairchildsemi.com

FDD6N25 / FDU6N25 Rev. A

FDD6N25 / FDU6N25 250V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

6www.fairchildsemi.com

FDD6N25 / FDU6N25 Rev. A

FDD6N25 / FDU6N25 250V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Wave forms

7www.fairchildsemi.com

FDD6N25 / FDU6N25 Rev. A

FDD6N25 / FDU6N25 250V N-Channel MOSFET

Mechanical Dimensions

D-PAK

8www.fairchildsemi.com

FDD6N25 / FDU6N25 Rev. A

FDD6N25 / FDU6N25 250V N-Channel MOSFET

Mechanical Dimensions

I-PAK

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APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER

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which, (a) are intended for surgical implant into the body or

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when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in a significant injury of the user.

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve

design.

Obsolete Not In Production This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for

reference information only.

Rev. I23

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FDD6N25

250V N-Channel MOSFET

General description

Features

Contents

•General description

•Features

•Product status/pricing/packaging

•Order Samples

•Qualification Support

These N-Channel enhancement mode power field effect transistors are

produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state

resistance, provide superior switching performance, and withstand high

energy pulse in the avalanche and commutation mode. These devices are

well suited for high efficient switched mode power supplies and active

power facto

correction.

z4.4A, 250V, RDS(on) = 1.1Ω @VGS = 10 V

zLow gate charge ( typical 4.5 nC)

zLow Crss ( typical 5 pF)

zFast switching

z100% avalanche tested

zImproved dv/dt capability

Datasheet

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