TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description * 4.4A, 250V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. * Low gate charge ( typical 4.5 nC) * Low Crss ( typical 5 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. * Fast switching * 100% avalanche tested * Improved dv/dt capability D D G S G I-PAK D-PAK FDD Series G D S FDU Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR FDD6N25 / FDU6N25 Unit 250 V 4.4 2.6 A A 18 A 30 V (Note 2) 45 mJ Avalanche Current (Note 1) 4.4 A EAR Repetitive Avalanche Energy (Note 1) 5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 50 0.4 W W/C TJ, TSTG Operating and Storage Temperature Range -55 to +150 C TL Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds 300 C (Note 1) (TC = 25C) - Derate above 25C Thermal Characteristics Symbol Parameter Typ Max Unit RJC Thermal Resistance, Junction-to-Case -- 2.5 C/W RJA Thermal Resistance, Junction-to-Ambient -- 110 C/W (c)2007 Fairchild Semiconductor Corporation FDD6N25 / FDU6N25 Rev. A 1 www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET February 2007 Device Marking Device Package Reel Size Tape Width Quantity FDD6N25 FDD6N25TM D-PAK 380mm 16mm 2500 FDD6N25 FDD6N25TF D-PAK 380mm 16mm 2000 FDU6N25 FDU6N25TU I-PAK - - 70 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min. Typ. Max Units 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250A, Referenced to 25C -- 0.25 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125C --- --- 1 10 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.9 1.1 -- 5.5 -- S -- 194 250 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 2.2A gFS Forward Transconductance VDS = 40V, ID = 2.2A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 38 50 pF -- 5 8 pF -- 10 30 ns -- 25 60 ns -- 7 24 ns -- 12 34 ns -- 4.5 6 nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125V, ID = 6A RG = 25 (Note 4, 5) VDS = 200V, ID = 6A VGS = 10V (Note 4, 5) -- 1.5 -- nC -- 1.8 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 4.4 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 18 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 4.4A -- -- 1.4 V trr Reverse Recovery Time -- 145 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 6A dIF/dt =100A/s -- 0.55 -- C (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3.7mH, IAS = 4.4A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 4.4A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDD6N25 / FDU6N25 Rev. A www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C o -55 C * Notes : 1. 250s Pulse Test -1 10 * Notes : 1. VDS = 40V 2. 250s Pulse Test o 2. TC = 25 C 0 -1 0 10 10 1 10 10 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 5 IDR, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 6 4 VGS = 10V 3 2 VGS = 20V 1 o 1 10 150oC o 25 C 0 0 2 4 6 8 10 10 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 1.0 1.2 1.4 1.6 1.8 2.0 Figure 6. Gate Charge Characteristics 400 12 300 Coss 250 Ciss VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 350 200 150 100 0.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] Capacitances [pF] * Notes : 1. VGS = 0V 2. 250s Pulse Test * Note : TJ = 25 C * Note : 1. VGS = 0 V 2. f = 1 MHz Crss 50 VDS = 50V 10 VDS = 125V VDS = 200V 8 6 4 2 * Note : ID = 6A 0 -1 10 0 10 0 1 10 0 VDS, Drain-Source Voltage [V] 2 3 4 5 QG, Total Gate Charge [nC] 3 FDD6N25 / FDU6N25 Rev. A 1 www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 2. ID = 250A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 2.2 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 5 1 100 s 4 1 ms 10 ms 100 ms DC 0 10 ID, Drain Current [A] ID, Drain Current [A] 10 Operation in This Area is Limited by R DS(on) -1 10 * Notes : 3 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 0 25 2 10 10 50 75 100 125 150 o TC, Case Temperature [ C] VDS, Drain-Source Voltage [V] ZJC(t), Thermal Response Figure 11. Transient Thermal Response Curve 10 D = 0 .5 0 0 .2 PDM 0 .1 t1 0 .0 5 10 t2 0 .0 2 -1 * N o te s : 0 .0 1 o 1 . Z J C ( t) = 2 .5 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] 4 FDD6N25 / FDU6N25 Rev. A www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) FDD6N25 / FDU6N25 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDD6N25 / FDU6N25 Rev. A www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDD6N25 / FDU6N25 Rev. A www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET Mechanical Dimensions D-PAK 7 FDD6N25 / FDU6N25 Rev. A www.fairchildsemi.com FDD6N25 / FDU6N25 250V N-Channel MOSFET Mechanical Dimensions I-PAK 8 FDD6N25 / FDU6N25 Rev. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I23 (c) 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Product Folder - Fairchild P/N FDD6N25 - 250V N-Channel MOSFET Page 1 of 2 Careers | Sitema Go DATASHEETS, SAMPLES, BUY TECHNICAL INFORMATION APPLICATIONS DESIGN CENTER SUPPORT COMPANY INVESTORS MY FA Home >> Find products >> Related Links FDD6N25 250V N-Channel MOSFET Contents *General description *Features *Product status/pricing/packaging *Order Samples Request samples How to order products *Qualification Support Datasheet Download this datasheet Product Change Notices (PCNs) Support Sales support General description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. Quality and reliability e-mail this datasheet Design center This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high This page energy pulse in the avalanche and commutation mode. These devices are Print version well suited for high efficient switched mode power supplies and active power factor correction. back to top Features z z z z z z 4.4A, 250V, RDS(on) = 1.1 @VGS = 10 V Low gate charge ( typical 4.5 nC) Low Crss ( typical 5 pF) Fast switching 100% avalanche tested Improved dv/dt capability back to top Product status/pricing/packaging Product Product status Pb-free Status mhtml:file://C:\TEMP\FDD6N25TF.mht Pricing* Package type Leads Packing method Package Marking Convention** 16-Aug-2007 Product Folder - Fairchild P/N FDD6N25 - 250V N-Channel MOSFET FDD6N25TF FDD6N25TM Full Production Full Production $0.54 $0.56 TO-252(DPAK) TO-252(DPAK) Page 2 of 2 2 2 TAPE REEL Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FDD Line 3: 6N25 TAPE REEL Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FDD Line 3: 6N25 * Fairchild 1,000 piece Budgetary Pricing ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples Indicates product with Pb-free second-level interconnect. For more information click here. Package marking information for product FDD6N25 is available. Click here for more information . back to top Qualification Support Click on a product for detailed qualification data Product FDD6N25TF FDD6N25TM back to top (c) 2007 Fairchild Semiconductor Products | Design Center | Support | Company News | Investors | My Fairchild | Contact Us | Site Index | Privacy Policy | Site Terms & Conditions | Standard Terms & Conditions o mhtml:file://C:\TEMP\FDD6N25TF.mht 16-Aug-2007