Product Datasheet Search Results:

FB10R06KL4G.pdf12 Pages, 210 KB, Original
FB10R06KL4G.pdf10 Pages, 303 KB, Original
FB10R06KL4G_B1.pdf13 Pages, 314 KB, Original

Product Details Search Results:

Infineon.com/FB10R06KL4G
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Channel Type":"N-CHANNEL","Terminal Form":"UNSPECIFIED","Number of Terminals":"19","Turn-off Time-Nom (toff)":"260 ns","Collector-emitter Voltage-Max":"600 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"15 A","Case Connection":"ISOLATED","Turn-on Time-Nom (ton)":"58 ns","Terminal Position":"UPPER","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuration":"COMPLEX","Package Style":"FLANGE MOUNT"...
1232 Bytes - 04:59:00, 27 November 2024
Infineon.com/FB10R06KL4G_B1
{"Factory Pack Quantity":"4","Product":"IGBT Silicon Modules","Product Category":"IGBT Modules","Brand":"Infineon Technologies","Continuous Collector Current at 25 C":"15 A","Collector- Emitter Voltage VCEO Max":"600 V","Mounting Style":"Screw","Maximum Gate Emitter Voltage":"+/- 20 V","Minimum Operating Temperature":"- 40 C","Package / Case":"EASY2","Configuration":"Hex","Maximum Operating Temperature":"+ 125 C","RoHS":"Details","Manufacturer":"Infineon"}...
1393 Bytes - 04:59:00, 27 November 2024

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