Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4 G
V
orläufi
g
Preliminary
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage Tvj =25°C VRRM 800 V
Durchlaßstrom Grenzeffektivwert pro Chip
RMS forward current per chip TC =80°C IFRMSM 23 A
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output TC =80°C IRMSmax 51 A
Stoßstrom Grenzwert tP = 10 ms, Tvj = 25°C IFSM 197 A
surge forward current tP = 10 ms, Tvj = 150°C 158 A
Grenzlastintegral tP = 10 ms, Tvj = 25°C I2t194 A2s
I2t - value tP = 10 ms, Tvj = 150°C 125 A2s
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage Tvj =25°C VCES 600 V
Kollektor-Dauergleichstrom TC = 80°C IC,nom. 10 A
DC-collector current TC = 25 °C IC15 A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current tP = 1 ms, TC =80°C ICRM 20 A
Gesamt-Verlustleistung
total power dissipation TC = 25°C Ptot 55 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage VGES +/- 20V V
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current IF10 A
Periodischer Spitzenstrom
repetitive peak forw. current tP = 1 ms IFRM 20 A
Grenzlastintegral
I2t - value VR = 0V, tp = 10ms, Tvj = 125°C I2t12 A2s
prepared by: Thomas Passe date of publication: 2002-02-13
approved by: Ingo Graf revision: 5
1(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4 G
Vorläufig
Preliminary
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate VISOL 2,5 kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier min. typ. max.
Durchlaßspannung
forward voltage Tvj = 150°C, I F= 10 A VF- 0,9 - V
Schleusenspannung
threshold voltage Tvj = 150°C V(TO) - 0,67 - V
Ersatzwiderstand
slope resistance Tvj = 150°C rT-21-mW
Sperrstrom
reverse current Tvj = 150°C, V R= 800 V IR-5-mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip TC = 25°C RAA'+CC' - 9 - mW
Transistor Wechselrichter/ Transistor Inverter min. typ. max.
Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 10 A VCE sat - 1,95 2,55 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 10 A - 2,2 - V
Gate-Schwellenspannung
gate threshold voltage VCE = VGE, Tvj = 25°C, IC = 0,35mA VGE(TO) 4,5 5,5 6,5 V
Eingangskapazität
input capacitance
f = 1MHz, Tvj = 25°C
VCE = 25 V, VGE = 0 V Cies - 0,8 - nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current VCE = 0V, VGE =20V, Tvj =25°C IGES - - 400 nA
Einschaltverzögerungszeit (ind. Last) IC = INenn, V CC = 300 V
turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 82 Ohm td,on -32-ns
VGE = ±15V, Tvj = 125°C, RG = 82 Ohm - 30 - ns
Anstiegszeit (induktive Last) IC = INenn, V CC = 300 V
rise time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 82 Ohm tr-26-ns
VGE = ±15V, Tvj = 125°C, RG = 82 Ohm - 28 - ns
Abschaltverzögerungszeit (ind. Last) IC = INenn, V CC = 300 V
turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 82 Ohm td,off - 234 - ns
VGE = ±15V, Tvj = 125°C, RG = 82 Ohm - 230 - ns
Fallzeit (induktive Last) IC = INenn, V CC = 300 V
fall time (inductive load) VGE = ±15V, Tvj = 25°C, RG = 82 Ohm tf-10-ns
VGE = ±15V, Tvj = 125°C, RG = 82 Ohm - 30 - ns
Einschaltverlustenergie pro Puls IC = INenn, V CC = 300 V
turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 82 Ohm Eon - 0,36 - mWs
L S = 80 nH
Abschaltverlustenergie pro Puls IC = INenn, V CC = 300 V
turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, RG = 82 Ohm Eoff - 0,44 - mWs
L S = 80 nH
Kurzschlußverhalten tP £ 10µs, VGE £ 15V, RG = 82 Ohm
SC Data Tvj£125°C, VCC =360 V ISC -40- A
-mA
ICES - 5,0
VGE = 0V, Tvj =125°C, VCE = 600V
2(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4 G
Vorläufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min. typ. max.
Modulinduktivität
stray inductance module LsCE - - 40 nH
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip TC = 25°C RCC'+EE' - 14 - mW
Diode Wechselrichter/ Diode Inverter min. typ. max.
Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 10 A VF- 1,85 2,25 V
forward voltage VGE = 0V, Tvj = 125°C, IF = 10 A - 1,9 - V
Rückstromspitze IF=INenn, - diF/dt = 300 A/us
peak reverse recovery current VGE = -10V, Tvj = 25°C, VR = 300 V IRM -11- A
VGE = -10V, Tvj = 125°C, VR = 300 V - 12 - A
Sperrverzögerungsladung IF=INenn, - diF/dt = 600 A/us
recovered charge VGE = -10V, Tvj = 25°C, VR = 300 V Qr- 0,4 - µAs
VGE = -10V, Tvj = 125°C, VR = 300 V - 0,8 - µAs
Abschaltenergie pro Puls IF=INenn, - diF/dt = 600 A/us
reverse recovery energy VGE = -10V, Tvj = 25°C, VR = 300 V Erec - 0,05 - mWs
VGE = -10V, Tvj = 125°C, VR = 300 V - 0,12 - mWs
NTC-Widerstand/ NTC-Thermistor min. typ. max.
Nennwiderstand TC = 25°C R25 -5-kW
Abweichung von R100
deviation of R100 TC = 100°C, R100 = 493 WDR/R -5 5 %
Verlustleistung
power dissipation TC = 25°C P25 20 mW
B-Wert
B-value R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K
3(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4 G
Vorläufig
Preliminary
Thermische Eigenschaften / Thermal properties
min. typ. max.
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthJH - 2,6 - K/W
thermal resistance, junction to heatsink Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K - 2,8 - K/W
Diode Wechsr./ Diode Inverter - 4,3 - K/W
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode RthJC - - 2,4 K/W
thermal resistance, junction to case Trans. Wechsr./ Trans. Inverter - - 2,2 K/W
Diode Wechsr./ Diode Inverter - - 3,1 K/W
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthCH - 0,4 - K/W
thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K - 0,8 - K/W
Diode Wechsr./ Diode Inverter - 1,5 - K/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature Tvj - - 150 °C
Betriebstemperatur
operation temperature Top -40 - 125 °C
Lagertemperatur
storage temperature Tstg -40 - 125 °C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation
internal insulation Al2O3
CTI
comperative tracking index 225
Anpreßkraft f. mech. Befestigung pro Feder F N
mounting force per clamp
Gewicht
weight G36g
Kriechstrecke
creeping distance 13,5 mm
Luftstrecke
clearance 12 mm
Kriechstrecke
creeping distance 7,5 mm
Luftstrecke
clearance 7,5 mm
Terminal - Terminal
terminal to terminal
Kontakt - Kühlkörper
terminal to heatsink
40...80
4(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4 G
Vorläufig
Preliminary
IC [A]
VCE [V]
IC [A]
VCE [V]
Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)
Output characteristic Inverter (typical) VGE = 15 V
0
2
4
6
8
10
12
14
16
18
20
0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00
Tj = 25°C
Tj = 125°C
0
2
4
6
8
10
12
14
16
18
20
0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00
VGE = 8V
VGE = 9V
VGE = 10V
VGE = 12V
VGE = 15V
VGE = 20V
Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)
Output characteristic Inverter (typical) Tvj = 125°C
5(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4 G
Vorläufig
Preliminary
IC [A]
VGE [V]
IF [A]
VF [V]
Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF)
Forward characteristic of FWD Inverter (typical)
0
2
4
6
8
10
12
14
16
18
20
5,00 6,00 7,00 8,00 9,00 10,00 11,00 12,00
Tj = 25°C
Tj = 125°C
Übertragungscharakteristik Wechselr. (typisch) IC = f (VGE)
Transfer characteristic Inverter (typical) VCE = 20 V
0
2
4
6
8
10
12
14
16
18
20
0,00 0,50 1,00 1,50 2,00 2,50 3,00
Tj = 25°C
Tj = 125°C
6(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4 G
Vorläufig
Preliminary
300 V
82Ohm
E [mWs]
IC [A]
300 V
E [mWs]
RG [W]
Schaltverluste Wechselr. (typisch) E
on = f (IC), Eoff = f (IC), Erec = f (IC) VCC =
Switching losses Inverter (typical) Tj = 125°C, VGE = ±15 V, RGon = RGoff =
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
80 100 120 140 160 180 200
Eon
Eoff
Erec
Schaltverluste Wechselr. (typisch) E
on = f (RG), Eoff = f (RG), Erec = f (RG)
Switching losses Inverter (typical)
Tj = 125°C, VGE = +-15 V , Ic = Inenn , VCC =
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
0 2 4 6 8 101214161820
Eon
Eoff
Erec
7(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4 G
Vorläufig
Preliminary
ZthJH [K/W]
t [s]
82Ohm
IC [A]
VCE [V]
Transienter Wärmewiderstand Wechselr. ZthJH = f (t)
Transient thermal impedance Inverter
0,100
1,000
10,000
0,001 0,01 0,1 1 10
Zth-IGBT
Zth-FWD
i 1 2 3 4
IGBT: ri [K/W]: 185e-3 922,6e-3 722,7e-3 969,7e-3
ti [s]: 3e-6 79,9e-3 10,3e-3 226,8e-3
FWD: ri [K/W]: 280,9e-3 1,41 1,1 1,51
ti [s]: 3e-6 78,7e-3 10,16e-3 225,6e-3
Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE)
Reverse bias save operating area Inverter (RBSOA) Tvj = 125°C, VGE = ±15V, RG =
0
5
10
15
20
25
0 100 200 300 400 500 600 700
IC,Modul
IC,Chip
8(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4 G
Vorläufig
Preliminary
IF [A]
VF [V]
R[W]
TC [°C]
Durchlaßkennlinie der Gleichrichterdiode (typisch) IF = f (VF)
Forward characteristic of Rectifier Diode (typical)
0
2
4
6
8
10
12
14
16
18
20
0,00 0,20 0,40 0,60 0,80 1,00 1,20
Tj = 25°C
Tj = 150°C
NTC- Temperaturkennlinie (typisch) R = f (T)
NTC- temperature characteristic (typical)
Rtyp
100
1000
10000
100000
0 20 40 60 80 100 120 140
9(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4 G
Vorläufig
Preliminary
Schaltplan/ Circuit diagram
Gehäuseabmessungen/ Package outlines
J
Bohrplan /
drilling layout
10(11)
Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4 G
Gehäuseabmessungen Forts. / Package outlines contd.
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine
Eigenschaften zugesichert. Diese gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
11(11)
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