Technische Information / Technical Information FB10R06KL4 G IGBT-Module IGBT-Modules Vorlaufig Preliminary Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage Tvj =25C VRRM 800 V Durchlastrom Grenzeffektivwert pro Chip RMS forward current per chip TC =80C IFRMSM 23 A Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output TC =80C IRMSmax 51 A IFSM 197 A Stostrom Grenzwert tP = 10 ms, T vj = surge forward current tP = 10 ms, T vj = 150C 25C Grenzlastintegral tP = 10 ms, T vj = I2t - value tP = 10 ms, T vj = 150C 2 I t 25C 158 A 194 A2 s 125 A2 s Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tvj =25C VCES 600 V TC = 80C IC,nom. 10 A TC = 25 C IC 15 A ICRM 20 A Ptot 55 W VGES +/- 20V V IF 10 A IFRM 20 A 2 I t 12 A2 s Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, Gesamt-Verlustleistung total power dissipation TC = 25C T C =80C Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral 2 I t - value VR = 0V, t p = 10ms, T vj = 125C prepared by: Thomas Passe date of publication: 2002-02-13 approved by: Ingo Graf revision: 5 1(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB10R06KL4 G Vorlaufig Preliminary Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. VF - 0,9 - V Diode Gleichrichter/ Diode Rectifier Durchlaspannung forward voltage Tvj = 150C, Schleusenspannung threshold voltage Tvj = 150C V(TO) - 0,67 - V Ersatzwiderstand slope resistance Tvj = 150C rT - 21 - mW Sperrstrom reverse current Tvj = 150C, IR - 5 - mA Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip TC = 25C RAA'+CC' - 9 - mW min. typ. max. - 1,95 2,55 V - 2,2 - V VGE(TO) 4,5 5,5 6,5 V Cies - 0,8 - nF ICES - 5,0 - mA IGES - - 400 nA I F = 10 A V R = 800 V Transistor Wechselrichter/ Transistor Inverter VGE = 15V, T vj = 25C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, T vj = 125C, I C = 10 A Gate-Schwellenspannung gate threshold voltage VCE = VGE, I C = 0,35mA Eingangskapazitat input capacitance f = 1MHz, Tvj = 25C VCE = 25 V, V GE = 0 V Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse VGE = 0V, I C = 10 A Tvj = 25C, Tvj =125C, V CE = V CC = 300 V VGE = 15V, Tvj = 25C, R G = 82 Ohm VGE = 15V, Tvj = 125C, R G = 82 Ohm IC = INenn, 82 Ohm VGE = 15V, Tvj = 125C, R G = 82 Ohm IC = INenn, 82 Ohm VGE = 15V, Tvj = 125C, R G = 82 Ohm 82 Ohm VGE = 15V, Tvj = 125C, R G = 82 Ohm S ns ns tr - 26 - ns - 28 - ns td,off - 234 - ns - 230 - ns tf - 10 - ns - 30 - ns 82 Ohm Eon - 0,36 - mWs Eoff - 0,44 - mWs ISC - 40 - A = 80 nH V CC = 300 V VGE = 15V, Tvj = 125C, R G = L Kurzschluverhalten SC Data - V CC = 300 V VGE = 15V, Tvj = 125C, R G = IC = INenn, 32 30 V CC = 300 V VGE = 15V, Tvj = 25C, R G = IC = INenn, - V CC = 300 V VGE = 15V, Tvj = 25C, R G = IC = INenn, td,on V CC = 300 V VGE = 15V, Tvj = 25C, R G = L Abschaltverlustenergie pro Puls turn-off energy loss per pulse 600V VCE = 0V, V GE =20V, Tvj =25C IC = INenn, VCE sat S 82 Ohm = 80 nH tP 10s, V GE 15V, RG = 82 Ohm Tvj125C, VCC = 360 V 2(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB10R06KL4 G Vorlaufig Preliminary Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy TC = 25C VGE = 0V, Tvj = 25C, I F = 10 A VGE = 0V, Tvj = 125C, I F = 10 A IF=INenn, VGE = -10V, Tvj = 25C, V R = 300 V 300 V max. LsCE - - 40 nH RCC'+EE' - 14 - mW min. typ. max. - 1,85 2,25 V - 1,9 - V VF IRM - 11 - A - 12 - A - diF/dt = 600 A/us VGE = -10V, Tvj = 25C, V R = 300 V VGE = -10V, Tvj = 125C, V R = 300 V IF=INenn, typ. - diF/dt = 300 A/us VGE = -10V, Tvj = 125C, V R = IF=INenn, min. Qr - 0,4 - As - 0,8 - As - diF/dt = 600 A/us VGE = -10V, Tvj = 25C, V R = 300 V VGE = -10V, Tvj = 125C, V R = 300 V NTC-Widerstand/ NTC-Thermistor Nennwiderstand TC = 25C Abweichung von R100 deviation of R100 TC = 100C, R 100 = 493 W Verlustleistung power dissipation TC = 25C B-Wert B-value R2 = R1 exp [B(1/T2 - 1/T1)] Erec - 0,05 - mWs - 0,12 - mWs min. typ. max. R25 - 5 - kW DR/R -5 5 % 20 mW P25 3(11) B25/50 3375 K Technische Information / Technical Information IGBT-Module IGBT-Modules FB10R06KL4 G Vorlaufig Preliminary Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to heatsink Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink min. typ. max. - 2,6 - K/W Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K - 2,8 - K/W Diode Wechsr./ Diode Inverter - 4,3 - K/W - - 2,4 K/W Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthJH RthJC Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter - - 2,2 K/W Diode Wechsr./ Diode Inverter - - 3,1 K/W - 0,4 - K/W Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthCH Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K - 0,8 - K/W Diode Wechsr./ Diode Inverter - 1,5 - K/W Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 125 C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al2O3 CTI comperative tracking index 225 Anprekraft f. mech. Befestigung pro Feder mounting force per clamp F Gewicht weight Kontakt - Kuhlkorper terminal to heatsink Terminal - Terminal terminal to terminal G 40...80 N 36 g 13,5 mm Luftstrecke clearance 12 mm Kriechstrecke creeping distance 7,5 mm Luftstrecke clearance 7,5 mm Kriechstrecke creeping distance 4(11) Technische Information / Technical Information FB10R06KL4 G IGBT-Module IGBT-Modules Vorlaufig Preliminary Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) VGE = 15 V 20 18 Tj = 25C Tj = 125C 16 14 IC [A] 12 10 8 6 4 2 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 4,00 4,50 5,00 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) T vj = 125C 20 18 16 VGE = 8V 14 VGE = 9V IC [A] 12 10 VGE = 10V VGE = 12V VGE = 15V 8 VGE = 20V 6 4 2 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 VCE [V] 5(11) 3,50 Technische Information / Technical Information FB10R06KL4 G IGBT-Module IGBT-Modules Vorlaufig Preliminary Ubertragungscharakteristik Wechselr. (typisch) Transfer characteristic Inverter (typical) IC = f (VGE) VCE = 20 V 20 18 Tj = 25C Tj = 125C 16 14 IC [A] 12 10 8 6 4 2 0 5,00 6,00 7,00 8,00 9,00 10,00 11,00 12,00 VGE [V] Durchlakennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) IF = f (VF) 20 18 Tj = 25C Tj = 125C 16 14 IF [A] 12 10 8 6 4 2 0 0,00 0,50 1,00 1,50 2,00 VF [V] 6(11) 2,50 3,00 Technische Information / Technical Information FB10R06KL4 G IGBT-Module IGBT-Modules Vorlaufig Preliminary Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) Switching losses Inverter (typical) T j = 125C, V GE = 15 V, VCC = 300 V 82Ohm R Gon = RGoff = 1,6 Eon 1,4 Eoff Erec E [mWs] 1,2 1 0,8 0,6 0,4 0,2 0 0 2 4 6 8 10 12 14 16 18 20 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) Eon = f (RG), Eoff = f (RG), Erec = f (RG) T j = 125C, V GE = +-15 V , I c = Inenn , V CC = 300 V 1,6 Eon 1,4 Eoff Erec E [mWs] 1,2 1 0,8 0,6 0,4 0,2 0 80 100 120 140 160 RG [W] 7(11) 180 200 Technische Information / Technical Information FB10R06KL4 G IGBT-Module IGBT-Modules Vorlaufig Preliminary Transienter Warmewiderstand Wechselr. Transient thermal impedance Inverter ZthJH = f (t) 10,000 Zth-IGBT ZthJH [K/W] Zth-FWD 1,000 i 1 IGBT: ri [K/W]: 185e-3 2 922,6e-3 3 722,7e-3 ti [s]: 3e-6 FWD: r i [K/W]: 280,9e-3 79,9e-3 1,41 10,3e-3 1,1 226,8e-3 1,51 78,7e-3 10,16e-3 225,6e-3 ti [s]: 3e-6 4 969,7e-3 0,100 0,001 0,01 0,1 1 10 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE) Reverse bias save operating area Inverter (RBSOA)Tvj = 125C, V GE = 15V, R G = 82Ohm 25 20 IC,Modul IC,Chip IC [A] 15 10 5 0 0 100 200 300 400 VCE [V] 8(11) 500 600 700 Technische Information / Technical Information FB10R06KL4 G IGBT-Module IGBT-Modules Vorlaufig Preliminary Durchlakennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) IF = f (VF) 20 18 Tj = 25C Tj = 150C 16 14 IF [A] 12 10 8 6 4 2 0 0,00 0,20 0,40 0,60 0,80 1,00 1,20 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp R[W] 10000 1000 100 0 20 40 60 80 TC [C] 9(11) 100 120 140 Technische Information / Technical Information IGBT-Module IGBT-Modules FB10R06KL4 G Vorlaufig Preliminary Schaltplan/ Circuit diagram J Gehauseabmessungen/ Package outlines Bohrplan / drilling layout 10(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB10R06KL4 G Gehauseabmessungen Forts. / Package outlines contd. 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