Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"1.1V @ 250\u00b5A","Package \/ Case":"6-UDFN","Current - Continuous Drain (Id) @ 25\u00b0C":"10.5A (Ta)","Gate Charge (Qg) @ Vgs":"25.8nC @ 8V","Product Photos":"6-UDFN2020","Rds On (Max) @ Id, Vgs":"11 mOhm @ 8.5A, 4.5V","Datasheets":"DMN2013UFDE","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"3,000","Drain to Source Voltage (Vdss)":"20V","RoHS Information":"RoHS Cert of Compliance","Online ...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b18(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"10.5(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"20(V)","Packaging":"Tape and Reel","Power Dissipation":"2.03(W)","Operating Temp Range":"-55C to 150C","Package Type":"DFN EP","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"6","Number of Elements":"1"}...