DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
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April 2013
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DMN2013UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) MAX Package ID
TA = +25°C
20V
11m @ VGS = 4.5V U-DFN2020-6 10.5A
13m @ VGS = 2.5V U-DFN2020-6 9.4A
30m @ VGS = 1.8V U-DFN2020-6 6.5A
50m @ VGS = 1.5V U-DFN2020-6 5.5A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
General Purpose Interfacing Switch
Power Management Functions
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low Gate Threshold Voltage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
Ordering Information (Note 5)
Part Number Compliance Case Quantity per reel
DMN2013UFDE-7 Standard U-DFN2020-6 3,000
DMN2013UFDEQ-7 Automotive U-DFN2020-6 3,000
DMN2013UFDE-13 Standard U-DFN2020-6 10,000
DMN2013UFDEQ-13 Automotive U-DFN2020-6 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
U-DFN2020-6
Bottom View Pin Out
ESD PROTECTED
Equivalent Circuit
Source
Gate
Protection
Diode
Gate
Drain
N6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
N6
YM
e4
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS ±8 V
Continuous Drain Current (Note 7) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C ID 10.5
8.5 A
t < 10s TA = +25°C
TA = +70°C ID 12.5
10.0 A
Continuous Drain Current (Note 7) VGS = 2.5V
Steady
State
TA = +25°C
TA = +70°C ID 9.4
7.5 A
t <1 0s TA = +25°C
TA = +70°C ID 11.2
8.8 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 80 A
Maximum Body Diode Continuous Current IS 2.5 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) TA = +25°C PD 0.66 W
TA = +70°C 0.42
Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 189 °C/W
t<10s 132
Total Power Dissipation (Note 7) TA = +25°C PD 2.03 W
TA = +70°C 1.31
Thermal Resistance, Junction to Ambient (Note 7) Steady state RJA 61
°C/W
t<10s 43
Thermal Resistance, Junction to Case (Note 7) R
JC 9.3
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BVDSS 20 — — V
VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1 µA
VDS = 16V, VGS = 0V
Gate-Source Leakage IGSS — — ±2 µA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage VGS
(
th
)
0.5 — 1.1 V
VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS (ON) —
8.4 11
m
VGS = 4.5V, ID = 8.5A
9.8 13 VGS = 2.5V, ID = 8.5A
12 30 VGS = 1.8V, ID = 1A
15 50 VGS = 1.5V, ID = 0.5A
Forward Transfer Admittance |Yfs| — 10 — S
VDS = 5V, ID = 4A
Diode Forward Voltage VSD — — 1.2 V
VGS = 0V, IS = 8.5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss — 2453 — pF VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance Coss — 275 — pF
Reverse Transfer Capacitance Crss — 257 — pF
Gate Resistance R
g
— 1.2 — VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V) Q
g
— 14.3 — nC
VDS = 10V, ID = 8.5A
Total Gate Charge (VGS = 8V) Q
g
— 25.8 — nC
Gate-Source Charge Q
g
s — 1.8 — nC
Gate-Drain Charge Q
g
d — 2.1 — nC
Turn-On Delay Time tD
(
on
)
— 9.9 — ns
VDS = 10V, ID = 8.5A
VGS = 4.5V, RG = 1.8
Turn-On Rise Time t
r
— 24.5 — ns
Turn-Off Delay Time tD
(
off
)
— 66.4 — ns
Turn-Off Fall Time tf — 20.8 — ns
Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. Not subject to production testing
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
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0 0.5 1 1.5 2
V , DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
DS
0
5
10
15
20
25
30
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
5
10
15
20
V , GATE-SOURCE VOLTAGE
GS
Fig.2 Typical Transfer Characteristics
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0
0.005
0.010
0.015
0.020
04 8121620
I , DRAIN-SOURCE CURRENT
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
V = 1.5V
GS
0
0.005
0.010
0.015
0.020
0 5 10 15 20
I , DRAIN CURRENT
D
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.8
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
1.6
50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 5 On-Resistance Variation with Temperature
J
V = 4.5V
I= 10A
GS
D
V= V
I= 5A
GS
D
2.5
0
0.005
0.010
0.015
0.020
-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)
Fig. 6 On-Resistance Variation with Temperature
J
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
V=.5V
I= 5A
GS
D
2
V= V
I = 10A
GS
D
4.5
DMN2013UFDE
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0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
I= 1mA
D
I = 250µA
D
V , GATE THRESHOLD VOLTAGE (V)
GS(th)
0
5
10
15
20
0 0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(V)
S
T= 25°C
A
100
1,000
10,000
0 5 10 15 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Junction Capacitance
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E (pF)
T
C
iss
f = 1MHz
C
oss
C
rss
0 5 10 15 20 25 30 35 40
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 10 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS
V = 10V, I = A
DS D
8.5
0.01 0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
R
Limited
DS(on)
T = 150°C
T = 25°C
J(max)
A
V = 8V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
DMN2013UFDE
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0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
R = r * R
JA(t) (t)
JA
JA
R = 65C/W
Duty Cycle, D = t1/t2
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
Package Outline Dimensions
Suggested Pad Layout
U-DFN2020-6
Type E
Dim Min Max Typ
A 0.57 0.63 0.60
A1 0 0.05 0.03
A3 — — 0.15
b 0.25 0.35 0.30
b1 0.185 0.285 0.235
D 1.95 2.05 2.00
D2 0.85 1.05 0.95
E 1.95 2.05 2.00
E2 1.40 1.60 1.50
e — — 0.65
L 0.25 0.35 0.30
L1 0.82 0.92 0.87
K1 — — 0.305
K2 — — 0.225
Z — — 0.20
All Dimensions in mm
Dimensions Value
(in mm)
C 0.650
X 0.400
X1 0.285
X2 1.050
Y 0.500
Y1 0.920
Y2 1.600
Y3 2.300
A1
Z(4X)
b1
L1
K1
K2
D
D2
E
eb(6X)
L(2X)
E2
A
A3
X1
Y3
X (6x) C
X2 Y1
Y2
Y (2x)
DMN2013UFDE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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