DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) MAX Package ID TA = +25C 0.6mm profile - ideal for low profile applications PCB footprint of 4mm 11m @ VGS = 4.5V U-DFN2020-6 10.5A Low Gate Threshold Voltage 13m @ VGS = 2.5V U-DFN2020-6 9.4A ESD Protected Gate 30m @ VGS = 1.8V U-DFN2020-6 6.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 50m @ VGS = 1.5V U-DFN2020-6 5.5A Halogen and Antimony Free. "Green" Device (Note 3) V(BR)DSS 20V Features Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 2 Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: U-DFN2020-6 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Applications General Purpose Interfacing Switch Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu over Copper leadframe. Solderable Drain per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (approximate) U-DFN2020-6 Gate Gate Protection Diode ESD PROTECTED Bottom View Pin Out Source Equivalent Circuit Ordering Information (Note 5) Part Number DMN2013UFDE-7 DMN2013UFDEQ-7 DMN2013UFDE-13 DMN2013UFDEQ-13 Notes: Compliance Standard Automotive Standard Automotive Case U-DFN2020-6 U-DFN2020-6 U-DFN2020-6 U-DFN2020-6 Quantity per reel 3,000 3,000 10,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http"//www.diodes.com/products/packages.html. N6 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN2013UFDE Document number: DS35701 Rev. 7 - 2 Mar 3 YM Marking Information N6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D April 2013 (c) Diodes Incorporated DMN2013UFDE Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 4.5V TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C Steady State t < 10s Continuous Drain Current (Note 7) VGS = 2.5V Steady State t <1 0s ID Value 20 8 10.5 8.5 ID 12.5 10.0 A ID 9.4 7.5 A A 11.2 8.8 80 2.5 ID Pulsed Drain Current (10s pulse, duty cycle = 1%) Maximum Body Diode Continuous Current Units V V IDM IS A A A Thermal Characteristics Characteristic Symbol TA = +25C TA = +70C Steady state t<10s TA = +25C TA = +70C Steady state t<10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Value 0.66 0.42 189 132 2.03 1.31 61 43 9.3 -55 to +150 PD RJA PD RJA RJC TJ, TSTG Units W C/W W C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 -- -- -- -- -- -- 1 2 V A A VGS = 0V, ID = 250A VDS = 16V, VGS = 0V VGS = 8V, VDS = 0V VGS(th) 0.5 RDS (ON) -- |Yfs| VSD -- -- 1.1 11 13 30 50 -- 1.2 V Static Drain-Source On-Resistance -- 8.4 9.8 12 15 10 -- VDS = VGS, ID = 250A VGS = 4.5V, ID = 8.5A VGS = 2.5V, ID = 8.5A VGS = 1.8V, ID = 1A VGS = 1.5V, ID = 0.5A VDS = 5V, ID = 4A VGS = 0V, IS = 8.5A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf -- -- -- -- -- -- -- -- -- -- -- -- 2453 275 257 1.2 14.3 25.8 1.8 2.1 9.9 24.5 66.4 20.8 -- -- -- -- -- -- -- -- -- -- -- -- Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: m S V pF pF pF nC nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 8.5A VDS = 10V, ID = 8.5A VGS = 4.5V, RG = 1.8 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 8. Short duration pulse test used to minimize self-heating effect 9. Guaranteed by design. Not subject to production testing DMN2013UFDE Document number: DS35701 Rev. 7 - 2 2 of 6 www.diodes.com April 2013 (c) Diodes Incorporated DMN2013UFDE 30 20 VDS = 5.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 20 15 10 15 10 TA = 150C TA = 125C 5 TA = 85C 5 T A = 25C TA = -55C 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristic 0.020 0.015 VGS = 1.5V 0.010 VGS = 1.8V VGS = 2.5V VGS = 4.5V 0.005 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 VGS = 2.5V ID = 5A 1.2 VGS = 4.5V ID = 10A 1.0 0.8 0.6 50 VGS, GATE-SOURCE VOLTAGE Fig.2 Typical Transfer Characteristics 0.020 VGS = 4.5V 0.015 TA = 125C 0.010 Document number: DS35701 Rev. 7 - 2 TA = 85C TA = -55C 0.005 0 0 5 10 15 ID, DRAIN CURRENT Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.020 0.015 VGS = 2.5V ID = 5A 0.010 VGS = 4.5V ID = 10A 0.005 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMN2013UFDE TA = 150C TA = 25C 20 1.8 1.4 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 3 of 6 www.diodes.com 0 - 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature April 2013 (c) Diodes Incorporated DMN2013UFDE 20 1.2 IS, SOURCE CURRENT (V) VGS(th), GATE THRESHOLD VOLTAGE (V) 1.4 1.0 0.8 ID = 1mA 0.6 ID = 250A 0.4 15 T A = 25C 10 5 0.2 0 -50 0 10,000 10 VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Ciss 1,000 Coss Crss f = 1MHz 100 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 20 0 8 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 VDS = 10V, ID = 8.5A 6 4 2 0 0 5 10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate Charge 40 100 ID, DRAIN CURRENT (A) RDS(on) Limited PW = 100s 10 DC 1 PW = 10s PW = 1s 0.1 T J(max) = 150C PW = 100ms PW = 10ms PW = 1ms TA = 25C VGS = 8V Single Pulse DUT on 1 * MRP Board 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DMN2013UFDE Document number: DS35701 Rev. 7 - 2 100 4 of 6 www.diodes.com April 2013 (c) Diodes Incorporated DMN2013UFDE r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 65C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 12 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions A1 A A3 D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e b(6X) U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 -- -- 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e -- -- 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 -- -- 0.305 K2 -- -- 0.225 Z -- -- 0.20 All Dimensions in mm Suggested Pad Layout Dimensions Y3 Y2 X2 Y1 X1 X (6x) DMN2013UFDE Document number: DS35701 Rev. 7 - 2 C C X X1 X2 Y Y1 Y2 Y3 Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) 5 of 6 www.diodes.com April 2013 (c) Diodes Incorporated DMN2013UFDE IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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