Datasheet.Directory

{"Polarity":"N","Continuous Drain Current":"0.005(A)","Mounting":"Surface Mount","Output Power (Max)":"Not Required W","Type":"Power MOSFET","Gate-Source Voltage (Max)":"\u00b120(V)","Drain Efficiency":"Not Required %","Noise Figure":"Not Required dB","Operating Temperature Classification":"Industrial","Package Type":"SOT-223","Drain-Source On-Res":"14(ohm)","Frequency (Max)":"Not Required MHz","Power Gain ":"Not Required dB","Operating Temp Range":"-40C to 85C","Pin Count":"3 +Tab","Channel Mode":"Depletio...

{"Category":"Discrete Semiconductor Products","FET Feature":"Depletion Mode","Vgs(th) (Max) @ Id":"-","Package \/ Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"5mA (Ta)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SOT223-3L","PCN Design\/Specification":"Laser Marking Update 30\/Mar\/2015","Rds On (Max) @ Id, Vgs":"14 Ohm @ 50mA, 350mV","Datasheets":"CPC5602","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","Drain to Source Voltage (Vdss)":"350V","Online Catalo...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"2.5 W","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.0050 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"14 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-M...