INTEGRATED CIRCUITS DIVISION
www.ixysic.com
DS-CPC5602-R10 1
CPC5602
N-Channel Depletion Mode FET
Applications
Features
Description
Ordering Information
Package Pinout
• Support Component for LITELINK™
Data Access Arrangement (DAA)
• Telecommunications
• Normally On Switches
• Ignition Modules
• Converters
• Security
• Power Supplies
• 350V Drain-to-Source Voltage
• Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
• Low On-resistance: 8 (Typical) @ 25°C
• Low VGS(off) Voltage: -2.0V to -3.6V
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
The CPC5602 is an N-channel depletion mode Field
Effect Transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third generation vertical
DMOS process. The third generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. The vertical
DMOS process yields a highly reliable device,
particularly in difficult application environments such
as telecommunications, security, and power supplies.
One of the primary applications for the CPC5602 is
as a linear regulator/hook switch for the LITELINK
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5602 has a typical on-resistance of 8, a
drain-to-source voltage of 350V, and is available in an
SOT-223 package. As with all MOS devices, the FET
structure prevents thermal runaway and
thermal-induced secondary breakdown.
Pin Number Name
1GATE
2 DRAIN
3 SOURCE
4 DRAIN
Parameter Rating Units
Drain-to-Source Voltage - VDS 350 V
Max On-Resistance - RDS(on) 14
Max Power 2.5 W
D
GD S
4
123
Part # Description
CPC5602CTR N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/Reel)