www.clare.com
DS-CPC5602-R07 1
CPC5602
N-Channel Depletion Mode FET
RoHS
2002/95/EC e3
Pb
www.clare.com
Part Number Description
CPC5602C N-Channel Depletion Mode FET, SOT-223 Pkg.
Cut-Tape, Available in Quantities of 200, 300,
400, 500, and 600
CPC5602CTR N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/reel)
Applications
Features
Description
Ordering Information
Package Pinout
• Support Component for LITELINK™
Data Access Arrangement (DAA)
• Telecommunications
• Normally On Switches
• Ignition Modules
• Converters
• Security
• Power Supplies
• 350V Drain-to-Source Voltage
• Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
• Low On-resistance: 8 (Typical) @ 25°C
• Low VGS(off) Voltage: -2.0V to -3.6V
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
The CPC5602 is an N-channel depletion mode Field
Effect Transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. The third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. The vertical DMOS process yields a highly
reliable device, particularly in difficult application
environments such as telecommunications, security,
and power supplies.
One of the primary applications for the CPC5602 is
as a linear regulator/hook switch for the LITELINK
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5602 has a typical on-resistance of 8, a
drain-to-source voltage of 350V, and is available in an
SOT-223 package. As with all MOS devices, the FET
structure prevents thermal runaway and
thermal-induced secondary breakdown.
Pin Number Name
1GATE
2 DRAIN
3 SOURCE
4 DRAIN
Parameter Rating Units
Drain-to-Source Voltage - VDS 350 V
Max On-Resistance - RDS(on) 14
Max Power 2.5 W
D
GD S
4
123