Product Datasheet Search Results:
- BSC032NE2LS
- Infineon Technologies
- MOSFET N-CH 25V 84A TDSON-8 - BSC032NE2LS
- BSC032NE2LSATMA1
- Infineon Technologies
- MOSFET N-Ch 25V 84A TDSON-8 OptiMOS
- BSC032NE2LS=IN1
- Infineon Technologies
- Trans MOSFET N-CH 25V 22A 8-Pin TDSON EP
Product Details Search Results:
Infineon.com/BSC032NE2LS
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Product Photos":"8-PowerTDFN","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1200pF @ 12V","Series":"OptiMOS\u2122","Standard Package":"1","Supplier Device Package":"PG-TDSON-8","Datasheets":"BSC032NE2LS","Rds On (Max) @ Id, Vgs":"3.2 mOhm @ 30A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"37W","Package / Case":"8-PowerTDFN","Moun...
1683 Bytes - 11:56:42, 30 November 2024
Infineon.com/BSC032NE2LSATMA1
{"Product Category":"MOSFET","Series":"BSC032NE2","Brand":"Infineon Technologies","Packaging":"Reel","Tradename":"OptiMOS","RoHS":"Details","Manufacturer":"Infineon"}...
1185 Bytes - 11:56:42, 30 November 2024
Infineon.com/BSC032NE2LS=IN1
{"Category":"MOSFET","Maximum Drain Source Voltage":"25 V","Typical Rise Time":"2.8 ns","Typical Turn-Off Delay Time":"15 ns","Description":"Value","Maximum Continuous Drain Current":"22 A","Package":"8TDSON EP","Mounting":"Surface Mount","Maximum Gate Source Voltage":"20 V","Typical Turn-On Delay Time":"3.3 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"3.2@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"2.2 ns"}...
1444 Bytes - 11:56:42, 30 November 2024
Documentation and Support
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File Name | File Size (MB) | Document | MOQ | Support |
---|---|---|---|---|
BSC032NE2LS.pdf | 1.53 | 1 | Request |