BSC032NE2LS
OptiMOSTM Power-MOSFET
Features
• Optimized for high performance Buck converter
• Very low on-resistance RDS(on) @ VGS=4.5 V
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDVGS=10 V, TC=25 °C 84 A
VGS=10 V, TC=100 °C 53
VGS=4.5 V, TC=25 °C 68
VGS=4.5 V,
TC=100 °C
43
VGS=10 V, TA=25 °C,
RthJA=50 K/W2)
22
Pulsed drain current3) ID,pulse TC=25 °C 336
Avalanche current, single pulse4) IAS TC=25 °C 45
Avalanche energy, single pulse
EAS ID=20 A, RGS=25 W20 mJ
Gate source voltage
VGS ±20 V
Value
1) J-STD20 and JESD22
PG-TDSON-8
Type
Package
Marking
PG-TDSON-8
032NE2LS
VDS
25
V
RDS(on),max
3.2
mW
ID
84
A
QOSS
9.4
nC
QG(0V..10V)
16
nC
Product Summary
Rev. 2.2 page 1 2013-04-29
BSC032NE2LS
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation
Ptot TC=25 °C 37 W
TA=25 °C,
RthJA=50 K/W2)
2.5
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
RthJC - - 3.4 K/W
top - - 20
Device on PCB
RthJA 6 cm2 cooling area2) - - 50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=1 mA 25 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=250 µA 1.2 - 2
Zero gate voltage drain current
IDSS
VDS=25 V, VGS=0 V,
Tj=25 °C
-0.1 10 µA
VDS=25 V, VGS=0 V,
Tj=125 °C
-10 100
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V -10 100 nA
Drain-source on-state resistance
RDS(on) VGS=4.5 V, ID=30 A -3.8 4.8 mW
VGS=10 V, ID=30 A -2.7 3.2
Gate resistance
RG0.5 0.9 1.8 W
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=30 A
46 93 - S
3) See figure 3 for more detailed information
Value
Values
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2 page 2 2013-04-29
BSC032NE2LS
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -1200 1596 pF
Output capacitance
Coss -470 625
Reverse transfer capacitance
Crss -51 -
Turn-on delay time
td(on) -3.3 -ns
Rise time
tr-2.8 -
Turn-off delay time
td(off) -15 -
Fall time
tf-2.2 -
Gate Charge Characteristics5)
Gate to source charge
Qgs -3.1 4.1 nC
Gate charge at threshold
Qg(th) -1.9 -
Gate to drain charge
Qgd -1.9 2.9
Switching charge
Qsw -3.1 -
Gate charge total
Qg-7.7 10
Gate plateau voltage
Vplateau -2.7 - V
Gate charge total
Qg
VDD=12 V, ID=30 A,
VGS=0 to 10 V
-16 21 nC
Gate charge total, sync. FET
Qg(sync)
VDS=0.1 V,
VGS=0 to 4.5 V
-6.7 -
Output charge
Qoss VDD=12 V, VGS=0 V -9.4 13
Reverse Diode
Diode continuous forward current IS- - 37 A
Diode pulse current
IS,pulse - - 148
Diode forward voltage
VSD
VGS=0 V, IF=30 A,
Tj=25 °C
-0.87 1 V
Reverse recovery charge
Qrr
VR=15 V, IF=IS,
diF/dt=400 A/µs
-10 -nC
5) See figure 16 for gate charge parameter definition
4) See figure 13 for more detailed information
TC=25 °C
Values
VGS=0 V, VDS=12 V,
f=1 MHz
VDD=12 V, VGS=10 V,
ID=30 A, RG,ext=1.6 W
VDD=12 V, ID=30 A,
VGS=0 to 4.5 V
Rev. 2.2 page 3 2013-04-29
BSC032NE2LS
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
10-1
100
101
102
103
ID [A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-6
10-5
10-4
10-3
10-2
10-1
100
10-2
10-1
100
101
ZthJC [K/W]
tp [s]
0
5
10
15
20
25
30
35
40
0 40 80 120 160
Ptot [W]
TC [°C]
0
20
40
60
80
100
0 40 80 120 160
ID [A]
TC [°C]
Rev. 2.2 page 4 2013-04-29
BSC032NE2LS
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
3.2 V
3.5 V
4 V
4.5 V
5 V
7 V
8 V
10 V
0
1
2
3
4
5
6
7
0 10 20 30 40 50
RDS(on) [mW]
ID [A]
25 °C
150 °C
0
50
100
150
200
250
300
350
0 1 2 3 4 5
ID [A]
VGS [V]
0
50
100
150
200
0 20 40 60 80 100
gfs [S]
ID [A]
2.8 V
3 V
3.2 V
3.5 V
4 V
4.5 V
5 V
10 V
0
50
100
150
200
250
300
350
0 1 2 3
ID [A]
VDS [V]
Rev. 2.2 page 5 2013-04-29
BSC032NE2LS
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
0
1
2
3
4
5
6
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
250 µA
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
101
102
103
104
0 5 10 15 20 25
C [pF]
VDS [V]
25 °C
150 °C
1
10
100
1000
0.0 0.5 1.0 1.5
IF [A]
VSD [V]
Rev. 2.2 page 6 2013-04-29
BSC032NE2LS
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=30 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20
21
22
23
24
25
26
27
28
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
25 °C
100 °C
125 °C
0.1
1
10
100
1 10 100 1000
IAV [A]
tAV [µs]
5 V
12 V
20 V
0
2
4
6
8
10
12
0 4 8 12 16 20
VGS [V]
Qgate [nC]
Rev. 2.2 page 7 2013-04-29
BSC032NE2LS
Package Outline PG-TDSON-8
PG-TDSON-8: Outline
Rev. 2.2 page 8 2013-04-29
BSC032NE2LS
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 2.2 page 9 2013-04-29
BSC032NE2LS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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Rev. 2.2 page 10 2013-04-29