BSC032NE2LS OptiMOSTM Power-MOSFET Product Summary Features * Optimized for high performance Buck converter * Very low on-resistance R DS(on) @ V GS=4.5 V * 100% avalanche tested * Superior thermal resistance VDS 25 V RDS(on),max 3.2 mW ID 84 A QOSS 9.4 nC QG(0V..10V) 16 nC * N-channel * Qualified according to JEDEC1) for target applications PG-TDSON-8 * Pb-free lead plating; RoHS compliant * Halogen-free according to IEC61249-2-21 Type Package Marking BSC032NE2LS PG-TDSON-8 032NE2LS Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 C 84 V GS=10 V, T C=100 C 53 V GS=4.5 V, T C=25 C 68 V GS=4.5 V, T C=100 C 43 V GS=10 V, T A=25 C, R thJA=50 K/W 2) 22 Unit A Pulsed drain current3) I D,pulse T C=25 C 336 Avalanche current, single pulse4) I AS T C=25 C 45 Avalanche energy, single pulse E AS I D=20 A, R GS=25 W 20 mJ Gate source voltage V GS 20 V 1) J-STD20 and JESD22 Rev. 2.2 page 1 2013-04-29 BSC032NE2LS Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 C 37 T A=25 C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 3.4 top - - 20 6 cm2 cooling area2) - - 50 Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 25 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 A 1.2 - 2 Zero gate voltage drain current I DSS V DS=25 V, V GS=0 V, T j=25 C - 0.1 10 V DS=25 V, V GS=0 V, T j=125 C - 10 100 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=30 A - 3.8 4.8 mW V GS=10 V, I D=30 A - 2.7 3.2 0.5 0.9 1.8 W 46 93 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information Rev. 2.2 page 2 2013-04-29 BSC032NE2LS Parameter Values Symbol Conditions Unit min. typ. max. - 1200 1596 - 470 625 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 51 - Turn-on delay time t d(on) - 3.3 - Rise time tr - 2.8 - Turn-off delay time t d(off) - 15 - Fall time tf - 2.2 - Gate to source charge Q gs - 3.1 4.1 Gate charge at threshold Q g(th) - 1.9 - Gate to drain charge Q gd - 1.9 2.9 Switching charge Q sw - 3.1 - Gate charge total Qg - 7.7 10 Gate plateau voltage V plateau - 2.7 - Gate charge total Qg V DD=12 V, I D=30 A, V GS=0 to 10 V - 16 21 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 6.7 - Output charge Q oss V DD=12 V, V GS=0 V - 9.4 13 - - 37 - - 148 V GS=0 V, V DS=12 V, f =1 MHz V DD=12 V, V GS=10 V, I D=30 A, R G,ext=1.6 W pF ns Gate Charge Characteristics5) V DD=12 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS A T C=25 C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 C - 0.87 1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/s - 10 - nC 4) 5) See figure 13 for more detailed information See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2013-04-29 BSC032NE2LS 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS10 V 100 40 35 80 30 60 ID [A] Ptot [W] 25 20 40 15 10 20 5 0 0 0 40 80 120 0 160 40 80 TC [C] 120 160 TC [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 s 10 s 0.5 102 100 100 s ZthJC [K/W] ID [A] 0.2 1 ms 101 10 ms DC 0.1 0.05 0.02 10-1 0.01 100 single pulse 10-1 10-2 10-1 100 101 102 VDS [V] Rev. 2.2 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-04-29 BSC032NE2LS 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 350 7 10 V 5V 300 6 3.2 V 4.5 V 250 RDS(on) [mW] ID [A] 200 150 3.5 V 5 4V 3.5 V 4V 4 4.5 V 5V 3 7V 8V 10 V 100 2 3.2 V 3V 50 1 2.8 V 0 0 0 1 2 3 0 10 20 VDS [V] 30 40 50 80 100 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C parameter: T j 350 200 300 150 250 gfs [S] ID [A] 200 150 100 100 50 50 150 C 25 C 0 0 0 1 2 3 4 5 VGS [V] Rev. 2.2 0 20 40 60 ID [A] page 5 2013-04-29 BSC032NE2LS 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=30 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 A 6 2.5 5 2 4 VGS(th) [V] RDS(on) [mW] 250 A 1.5 3 typ 1 2 0.5 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [C] 60 100 140 180 Tj [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 Ciss 103 100 150 C Coss IF [A] C [pF] 25 C 102 10 Crss 101 1 0 5 10 15 20 25 VDS [V] Rev. 2.2 0.0 0.5 1.0 1.5 VSD [V] page 6 2013-04-29 BSC032NE2LS 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 10 5V 12 V 20 V 25 C 10 8 VGS [V] IAV [A] 100 C 125 C 1 6 4 2 0.1 0 1 10 100 1000 0 4 tAV [s] 8 12 16 20 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 28 V GS 27 Qg 26 VBR(DSS) [V] 25 24 V gs(th) 23 22 Q g(th) 21 Q sw Q gs 20 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [C] Rev. 2.2 page 7 2013-04-29 BSC032NE2LS Package Outline PG-TDSON-8 PG-TDSON-8: Outline Rev. 2.2 page 8 2013-04-29 BSC032NE2LS Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 2.2 page 9 2013-04-29 BSC032NE2LS Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. 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