Datasheet.Directory

{"Number of Elements":"2","Channel Mode":"Enhancement","Continuous Drain Current":"42(A)","Mounting":"Surface Mount","Forward Transconductance (Typ)":"1(S)","Rad Hardened":"No","Mode Of Operation":"CW","Channel Type":"N","Packaging":"Bulk","Operating Temp Range":"-65C to 200C","Drain Efficiency (Typ)":"50(%)","Package Type":"CDFM","Power Gain (Typ)@Vds":"17@50V(dB)","Screening Level":"Military","Pin Count":"5","Drain Source Voltage (Max)":"100(V)","Output Power (Max)":"250(TYP)"}...

{"Number of Elements":"2","Channel Mode":"Enhancement","Forward Transconductance (Typ)":"1(S)","Operating Temp Range":"-65C to 225C","Frequency (Max)":"1300(MHz)","Channel Type":"N","Packaging":"Tape and Reel","Rad Hardened":"No","Drain Efficiency (Typ)":"56(%)","Mode Of Operation":"CW","Screening Level":"Military","Output Power (Max)":"250(TYP)","Drain Source Voltage (Max)":"100(V)","Power Gain (Typ)@Vds":"17@50V(dB)"}...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"42 A","EU RoHS Compliant":"Yes","Configuration":"COMMON SOURCE, 2 ELEMENTS","Transistor Type":"RF POWER","Channel Type":"N-CHANNEL","China RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"100 V","Transistor Application":...

{"Category":"Discrete Semiconductor Products","Transistor Type":"LDMOS (Dual)","Voltage - Rated":"100V","Family":"RF FETs","Series":"-","Noise Figure":"-","Package / Case":"SOT-1121B","Supplier Device Package":"CDFM4","Voltage - Test":"50V","Packaging":"Tube","Datasheets":"BLF6G13L(S)-250P","Frequency":"1.3GHz","Gain":"15dB","Standard Package":"20","Current - Test":"100mA","Current Rating":"42A","Power - Output":"250W","Other Names":"934065125112"}...