1. Product profile
1.1 General description
250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
1.2 Features and benefits
Typical CW performa nce at a frequ ency of 1.3 GHz, a supply voltage of 50 V, an IDq of
100 mA:
Output power = 250 W
Power gain = 17 dB
Efficiency = 56 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances
(RoHS)
1.3 Applications
Industrial, scientific and medical applicatio ns
BLF6G13L-250P;
BLF6G13LS-250P
Power LDMOS transistor
Rev. 3 — 14 October 2011 Product data sheet
Ta ble 1. Te st info rmation
Typi cal RF performance at Tcase =25
C; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation f VDS PL(1dB) GpD
(GHz) (V) (W) (dB) (%)
CW 1.3 50 250 17 56
BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 14 October 2011 2 of 14
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF6G13L-250P (SOT1121A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLF6G13LS-250P (SOT1121B)
1drain1
2drain2
3gate1
4gate2
5source [1]
2
45
3
1
4
35
1
2sym117
4
5
3
21
4
35
1
2sym117
Ta ble 3. Ordering information
Type number Package
Name Description Version
BLF6G13L-250P - flanged LDMOST ceramic package; 2 mounting
holes; 4 leads SOT1121A
BLF6G13LS-250P - earless flanged LDMOST ceramic package; 4 leads SOT1121B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 100 V
VGS gate-source voltage 0.5 +13 V
IDdrain current - 42 A
Tstg storage temperature 65 +150 C
Tjjunction temperature - 200 C
BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 14 October 2011 3 of 14
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
5. Thermal characteristics
6. Characteristics
6.1 Ruggedness in class-AB operation
The BLF6G13L-250P and BLF6G13LS-250P are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: VDS =50V; I
Dq =100mA; P
L= 250 W; f = 1.3 GHz.
Ta ble 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =85C; PL= 250 W 0.26 K/W
Table 6. DC characteristics
Tj = 25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 1.4 mA 100 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 235 mA 1.4 1.8 2.4 V
IDSS drain leakage current VGS =0V; V
DS =50V--1.4A
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V -21-A
IGSS gate leakage current VGS =11V; V
DS =0V--240nA
gfs forward transconductance VDS =10V; I
D=120mA - 1 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=4.75A -200-m
Ta ble 7. RF characteristics
Mode of operation: CW; f = 1.3 GHz; RF performance at VDS =50V; I
Dq =100mA; T
case =25
C;
unless otherwise specified, in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PLoutput power 250 - - W
VDS drain-source voltage PL=250W--50V
Gppower gain PL=250W 1517- dB
RLin input return loss PL=250W - 30 20 dB
Ddrain efficiency PL=250W 5256- %
BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 14 October 2011 4 of 14
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
7. Application information
7.1 CW
7.2 2-Carrier CW
VDS = 50 V; IDq = 100 mA.
Fig 1. Power gain and drain efficiency as function of load power; typical values
PL (W)
0 100 200 300 35025015050
001aan868
13
16
19
Gp
(dB)
10
30
45
60
ηD
(%)
15
Gp
ηD
VDS = 50 V; IDq = 100 mA; carrier spacing = 100 kHz.
Fig 2. Power gain and drain efficiency as function of load power; typical values
PL (W)
0 300200100
001aan869
13
16
19
Gp
(dB)
10
30
45
60
ηD
(%)
15
Gp
ηD
BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 14 October 2011 5 of 14
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
7.3 Impedance information
VDS = 50 V; f = 1300 MHz; carrier spacing = 100 kHz.
(1) IDq = 100 mA
(2) IDq = 300 mA
(3) IDq = 500 mA
(4) IDq = 700 mA
(5) IDq = 900 mA
(6) IDq = 1100 mA
(7) IDq = 1300 mA
(8) IDq = 1500 mA
VDS = 50 V; f = 1300 MHz; carrier spacing = 100 kHz.
(1) IDq = 100 mA
(2) IDq = 300 mA
(3) IDq = 500 mA
(4) IDq = 700 mA
(5) IDq = 900 mA
(6) IDq = 1100 mA
(7) IDq = 1300 mA
(8) IDq = 1500 mA
Fig 3. Power gain as a function of load power;
typical values Fig 4. Third order intermodulation distortion as a
function of load power; typical values
PL (W)
0 250200100 15050
001aan870
15
18
21
Gp
(dB)
12
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
PL (W)
0 250200100 15050
001aan871
-40
-30
-50
-20
-10
IMD3
(dBc)
-60
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Table 8. Typical imp edance
Typical values valid per section unless otherwise specified.
f ZSZL optimized for GpZL optimized for D
MHz
1200 3.03 j8.15 2.03 j0.25 1.46 j0.47
1300 4.06 j9.52 1.67 j0.92 1.19 j0.95
1400 7.00 j9.61 1.50 j1.48 1.22 j1.49
Fig 5. Definition of tran sistor impedance
001aak544
gate 1
gate 2
drain 2
drain 1
Z
S
Z
L
BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 14 October 2011 6 of 14
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
7.4 Circuit information
[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 200B or capacitor of same quality.
Table 9. List of components
For application circuit see Figure 6.
Component Description Value Remarks
C1, C2 multilayer ceramic chip capacitor 1.9 pF [1]
C3, C4 multilayer ceramic chip capacitor 4.7 pF [1]
C5 multilayer ceramic chip capacitor 10 pF [1]
C6, C7, C8, C9, C10,
C11, C38, C39 multilayer ceramic chip capacitor 56 pF [1]
C12, C13 multilayer ceramic chip capacitor 100 pF [2]
C14, C15, C32, C34 multilayer ceramic chip capacitor 1 nF [2]
C16, C17 electrolytic capacitor 10 F; 50 V 220 X5R
C20, C21, C22, C23 multilayer ceramic chip capacitor 3.0 pF [1]
C40, C41 multilayer ceramic chip capacitor 2.4 pF [1]
C42, C43, C44, C45 multilayer ceramic chip capacitor 2.7 pF [1]
C24 multilayer ceramic chip capacitor 0.8 pF [1]
C25 multilayer ceramic chip capacitor 0.6 pF [1]
C26, C27, c28, C29,
C30, C31, C33, C35 multilayer ceramic chip capacitor 100 pF [1]
C36, C37 multilayer ceramic chip capacitor 20 nF [3]
C46, C47 electrolytic capacitor 100 F; 63 V
R1, R2 SMD resistor 0603 5.1 UT-141C-25-TP
SR1 COAX 25 UT-141C-35-TP
SR2 COAX 35
BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 14 October 2011 7 of 14
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
Printed-Circuit Board (PCB): Duroid 4350B; r = 3.48; thickness = 0.762 mm;
thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 6. Component layo ut for application circuit
001aan872
6.600
mm
C40 C44
C42
C20 C22
C41
C43
C45
C38
C37
C34 C35
C33
C32
C36
C47
C46
C31
C30
C29
C28
C27
C26
SR2
C21 C23 C25
C24
C39
C17
C14
C16
C15
SR1
C12
C11
C6
C7
C8
C9 C5
C4
C3
C10
C13
C1
C2
R2
R1
4.200
mm
4.300
mm
1.500
mm
2.700
mm
2.800
mm
BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 14 October 2011 8 of 14
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
8. Test information
8.1 Reliability
MTTF (Years)
The reliability at pulsed conditions can be calculated as follows: MTTF x 1 / .
(1) Tj = 130 C
(2) Tj = 140 C
(3) Tj = 150 C
(4) Tj = 160 C
(5) Tj = 170 C
Fig 7. Electromigration (IDS(DC), total device)
001aao402
102
10
104
103
105
Years
1
IDS(DC) (A)
012842106
(1) (2) (3) (4) (5)
BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 14 October 2011 9 of 14
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
9. Package outline
Fig 8. Package outline SOT1121A
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT1121A 09-10-12
10-02-02
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1121A
E1
Q
E
c
D
A
F
D1
A
B
C
q
e
H1
U1
U2
H
Cw2
b
Aw1B
p
2
1
4
5
3
sot1121a_po
Unit(1)
mm max
nom
min
4.75
3.45
3.94
3.68
0.18
0.10
20.02
19.61
19.96
19.66
9.53
9.27
1.14
0.89
19.94
18.92
3.38
3.12
9.91
9.65 0.25
A
Dimensions
bcDD
1EE
1
9.53
9.27
FHH
1
12.83
12.57
pQ
(2)
1.70
1.45
q
27.94
U1
34.16
33.91
U2w1
0.51
inches max
nom
min
0.187
0.136
0.155
0.145
0.007
0.004
8.89
e
0.35
0.788
0.772
0.786
0.774
0.375
0.365
0.045
0.035
0.785
0.745
0.133
0.123
0.39
0.38 0.01
0.375
0.365
0.505
0.495
0.067
0.057 1.1 1.345
1.335 0.02
w2
0 5 10 mm
scale
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 14 October 2011 10 of 14
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
Fig 9. Package outline SOT1121B
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT1121B
sot1121b_po
09-10-12
09-12-14
Unit(1)
mm max
nom
min
4.75
3.45
3.94
3.68
0.18
0.08
20.02
19.61
19.96
19.66
9.53
9.27
1.14
0.89
19.94
18.92
9.91
9.65
A
Dimensions
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Earless flanged LDMOST ceramic package; 4 leads SOT1121B
bcDD
1EE
1
9.53
9.27
FHH
1
12.83
12.57
Q
1.70
1.45
U1
20.70
20.45
U2
inches max
nom
min
0.187
0.136
0.155
0.145
0.007
0.003
8.89
e
0.35
0.788
0.772
0.786
0.774
0.375
0.365
0.045
0.035
0.785
0.745
0.39
0.38
0.375
0.365
0.505
0.495
0.067
0.057
0.815
0.805
0.25
0.01
0.51
0.02
w2w3
0 5 10 mm
scale
D
H1
U1
A
F
D1D
E1
U2
H
w3
Dw2
Q
E
c
5
2
1
4
3
e
b
BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 14 October 2011 11 of 14
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
10. Handling information
11. Abbreviations
12. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Ta ble 10. Abbreviations
Acronym Description
CW Continuous Wave
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
MTTF Mean T ime To Failure
RF Radio Frequency
SMD Surface Mount Device
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change not ic e Supersedes
BLF6G13L-250P_6G13LS-250P v.3 20111014 Product data sheet - BLF6G13L-250P_
6G13LS-250P v.2
Modifications: •Table 6 on page 3: Several values have been updated
•Table 7 on page 3: The minimum value for D has been updated
•Section 8.1 on page 8: This section has been added
BLF6G13L-250P_6G13LS-2 50P v.2 20110321 Objective data sheet - BLF6G13L-250P_
6G13LS-250P v.1
BLF6G13L-250P_6G13LS-250P v.1 20101102 Objective data sheet - -
BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 14 October 2011 12 of 14
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
13. Legal information
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[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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Characteristics sections of this document is not warranted. Constant or
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Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Producti on This document contains the product specification.
BLF6G13L-250P_6G13LS-250P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 14 October 2011 13 of 14
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
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14. Contact information
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For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLF6G13L-250P; BLF6G13LS-250P
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 October 2011
Document identifier: BLF6G13L-250P_6G13LS-250P
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 4
7.1 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.2 2-Carrier CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Impedance information. . . . . . . . . . . . . . . . . . . 5
7.4 Circuit information. . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
8.1 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Handling information. . . . . . . . . . . . . . . . . . . . 11
11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
