Product Datasheet Search Results:
- 2SJ380(F)
- Toshiba Semiconductor And Storage
- MOSFET P-CH 100V 12A TO220NIS
Product Details Search Results:
Toshiba.co.jp/2SJ380(F)
{"Polarity":"P","Gate-Source Voltage (Max)":"\ufffd20 V","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"12 A","Mounting":"Through Hole","Drain-Source On-Volt":"100 V","Pin Count":"3 +Tab","Power Dissipation":"35 W","Operating Temp Range":"-55C to 150C","Package Type":"TO-220(NIS)","Rad Hardened":"No","Type":"Power MOSFET","Drain-Source On-Res":"0.21 ohm","Number of Elements":"1"}...
1461 Bytes - 15:52:25, 26 November 2024
Toshiba.semicon-storage.com/2SJ380(F)
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 4V Drive","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Series":"-","Standard Package":"50","Supplier Device Package":"TO-220NIS","Datasheets":"2SJ380 Mosfets Prod Guide","Rds On (Max) @ Id, Vgs":"210 mOhm @ 6A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"35W","Package / Case":"TO-220-3 Full Pack","Mounting Type":"Through Hole","Drain to Source Voltage ...
1713 Bytes - 15:52:25, 26 November 2024
Documentation and Support
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ERG2SJ360E.pdf | 0.92 | 1 | Request | |
ERG2SJ331V.pdf | 0.92 | 1 | Request | |
ERG12SJ300J.pdf | 0.92 | 1 | Request | |
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