2SJ380
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ380
Relay Drive, DC-DC Converter and Motor Drive
Applications
4-V gate drive
Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
High forward transfer admittance: |Yfs| = 7.7 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 100 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 12
Drain current
Pulse (Note 1) IDP 48
A
Drain power dissipation (Tc = 25°C) PD 35 W
Single pulse avalanche energy
(Note 2) EAS 312 mJ
Avalanche current IAR 12 A
Repetitive avalanche energy (Note 3) EAR 3.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 3.57 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W
Note1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.94 mH, RG = 25 Ω, IAR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA SC-67
TOSHIBA 2-10R1B
Weight: 1.9 g (typ.)
2SJ380
2009-09-29
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 V ±10 μA
Drain cut-off current IDSS V
DS = 100 V, VGS = 0 V 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 0.8 2.0 V
VGS = 4 V, ID = 6 A 0.25 0.32
Drain-source ON resistance RDS (ON)
VGS = 10 V, ID = 6 A 0.15 0.21
Ω
Forward transfer admittance Yfs V
DS = 10 V, ID = 6 A 4.5 7.7 S
Input capacitance Ciss 1100 pF
Reverse transfer capacitance Crss 200 pF
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
440 pF
Rise time tr 18
Turn-on time ton 30
Fall time tf 18
Switching time
Turn-off time toff
Duty 1%, tw = 10 μs
65
ns
Total gate charge
(gate-source plus gate-drain) Qg 48 nC
Gate-source charge Qgs 29 nC
Gate-drain (“miller”) charge Qgd
VDD 80 V, VGS = 10 V,
ID = 12 A
19 nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1) IDR 12 A
Pulse drain reverse current
(Note 1) IDRP 48 A
Forward voltage (diode) VDSF I
DR = 12 A, VGS = 0 V 1.7 V
Reverse recovery time trr 160 ns
Reverse recovery charge Qrr
IDR = 12 A, VGS = 0 V
dIDR/dt = 50 A/μs 0.5 μC
Marking
10 V
0 V
VGS
RL = 8.3 Ω
VDD 50 V
ID = 6 A
VOUT
50 Ω
Lot No.
Note 4
J380
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SJ380
2009-09-29
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Drain-source voltage VDS (V)
ID – VDS
Drain current ID (A)
Drain-source voltage VDS (V)
ID – VDS
Drain Current ID (A)
10
0
0
8
20
104
4
12
16
Common source
Tc = 25°C
Pulse test
26 8
2.5
3
4
6
8
VGS = 2 V
3.5
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
ID – VGS
Drain current ID (A)
Gate-source voltage VGS (V)
VDS – VGS
0
0
1.6
0.8
3.2
2.4
4 8 12 16 20
ID = 8 A
4
2
Common source
Tc = 25°C
Pulse test
6
0
0 1 2 3 5 6 4
2
4
8
10
25
100
Tc = 55°C
Common source
VDS = 10 V
Pulse test
Forward transfer admittance Yfs (S)
Drain current ID (A)
Yfs – ID
Drain current ID (A)
RDS (ON) – ID
Drain–source ON resistance
RDS (ON) (Ω)
0.03
0.1 201.00.3 10
Common source
Tc = 25°C
Pulse test
2.0
1.0
0.1
0.3
3
VGS = 4 V
10
0.05
0.5
10
0
0
2
5
2.0
1
3
4
Common source
Tc = 25°C
Pulse test
0.4 1.2 1.6
VGS = 2 V
2.5
3 4
6
8
0.8
Tc = 55°C
100 25
1
0.3 203 1.0 10
30
10
3
Common source
VDS = 10 V
Pulse test
5
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2009-09-29
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Case temperature Tc (°C)
RDS (ON) – Tc
Drain-source ON resistance RDS (ON) (Ω)
Drain-source voltage VDS (V)
IDR – VDS
Drain reverse current IDR (A)
Gate threshold voltage Vth (V)
Drain-source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
Case temperature Tc (°C)
Vth – Tc
4
0
80 16080 40 40
1
3
0120
Common source
VDS = 10 V
ID = 1 mA
Pulse test
2
Drain power dissipation PD (W)
Case temperature Tc (°C)
PD – Tc
Gate-source voltage VGS (V)
Total gate charge Qg (nC)
Dynamic Input/Output Characteristics
Drain-source voltage VDS (V)
0
0 40 80 120 160
10
20
30
40
0
0
40
100
10040
20
60
80
20 60 80
VDS
VGS
20 V
VDD = 80 V
40 V
0
8
20
4
12
16
Common source
ID = 12 A
Tc = 25°C
Pulse test
8
0
80 1604040 80 120
Common source
Pulse test ID = 8 A
2, 4
2
4
VGS = 4 V
VGS = 10 V
0
0.1
0.2
0.3
0.4
0.5
0.3
01.00.8 0.2
Common source
Tc = 25°C
Pulse test
0, 1
1
VGS = 10 V
0.6
1
3
10
30
0.4
2
3
5
0.5
5
30
0.1 10010 0.3
Crss
3
100
300
3000
1
Coss
Ciss
30
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1000
5000
50
500
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2009-09-29
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rth – tw
Pulse width tw (s)
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
Avalanche energy EAS (mJ)
Drain-source voltage VDS (V)
Safe Operating Area
Drain current ID (A)
Channel temperature (initial) TchC)
EAS – Tch
0
25
200
500
15075
100
300
400
50 100 125
Test circuit Wave form
IAR
BVDSS
VDD V
DS
RG = 25 Ω
VDD = 25 V, L = 2.94 mH
=VB
B
··L·I
2
1
Ε
DDVDSS
VDSS
2
AS
15 V
15 V
0.003
100 m10 m
0.01
1
1 10
0.005
0.3
3
0.03
0.5
0.05
0.1
10 μ 100 μ 1 m
Duty = 0.5
0.02
0.2
0.1
0.05
Single pulse
0.01
T
PDM
t
Duty = t/T
Rth (ch-c) = 3.57°C/W
0.1
1 3 10 30
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (continuous)
IC max (pulsed)*
VDSS max
1 ms*
10 ms*
100 μs*
DC operation
Tc = 25°C
100 300
0.3
0.5
1
3
5
10
30
50
100
2SJ380
2009-09-29
6
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