2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications * Unit: mm 4-V gate drive * Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) * High forward transfer admittance: |Yfs| = 7.7 S (typ.) * Low leakage current: IDSS = -100 A (max) (VDS = -100 V) * Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -100 V Drain-gate voltage (RGS = 20 k) VDGR -100 V Gate-source voltage VGSS 20 V (Note 1) ID -12 Pulse (Note 1) IDP -48 Drain power dissipation (Tc = 25C) PD 35 W JEITA Single pulse avalanche energy (Note 2) EAS 312 mJ TOSHIBA Avalanche current IAR -12 A Repetitive avalanche energy (Note 3) EAR 3.5 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C DC Drain current A JEDEC SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.57 C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 C/W Note1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = -25 V, Tch = 25C (initial), L = 2.94 mH, RG = 25 , IAR = -12 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 2SJ380 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 16 V, VDS = 0 V 10 A Drain cut-off current IDSS VDS = -100 V, VGS = 0 V -100 A ID = -10 mA, VGS = 0 V -100 V VDS = -10 V, ID = -1 mA V Drain-source breakdown voltage Gate threshold voltage V (BR) DSS Vth Drain-source ON resistance RDS (ON) Forward transfer admittance Yfs Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time -0.8 -2.0 VGS = -4 V, ID = -6 A 0.25 0.32 VGS = -10 V, ID = -6 A 0.15 0.21 VDS = -10 V, ID = -6 A 4.5 7.7 S 1100 pF 200 pF 440 pF 18 30 18 65 48 nC 29 nC 19 nC VDS = -10 V, VGS = 0 V, f = 1 MHz tr ID = -6 A 0V ton Fall time 50 Switching time tf VOUT RL = 8.3 Turn-on time VGS -10 V ns VDD -50 V Turn-off time Total gate charge toff Qg (gate-source plus gate-drain) Gate-source charge Qgs Gate-drain ("miller") charge Qgd Duty 1%, tw = 10 s VDD -80 V, VGS = -10 V, ID = -12 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Symbol Test Condition Min Typ. Max Unit IDR -12 A IDRP -48 A Forward voltage (diode) VDSF IDR = -12 A, VGS = 0 V 1.7 V Reverse recovery time trr IDR = -12 A, VGS = 0 V 160 ns Qrr dIDR/dt = 50 A/s 0.5 C Reverse recovery charge Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] J380 Part No. (or abbreviation code) Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SJ380 ID - VDS Common source Tc = 25C Pulse test -4 -3 -8 -10 -16 -6 Common source Tc = 25C Pulse test -8 -6 (A) Drain current ID (A) -4 ID - VDS -20 Drain Current ID -5 -3 -2.5 -2 -1 -4 -12 -10 -3.5 -8 -3 -4 -2.5 VGS = -2 V VGS = -2 V 0 0 -0.4 -1.2 -0.8 Drain-source voltage -1.6 0 0 -2.0 VDS (V) -2 -4 VDS (V) Common source 25 Tc = -55C 100 -6 -4 -2 -1 -2 -3 -4 Gate-source voltage -5 Tc = 25C Pulse test -2.4 -1.6 -4 -0.8 -2 0 0 -6 ID = -8 A VGS (V) -4 -8 -16 -20 VGS (V) RDS (ON) - ID 30 2.0 Common source VDS = -10 V Pulse test 10 Drain-source ON resistance RDS (ON) () (S) -12 Gate-source voltage Yfs - ID Forward transfer admittance Yfs VDS (V) VDS - VGS Common source VDS = -10 V Pulse test 0 0 -10 -3.2 Drain-source voltage Drain current ID (A) -8 -8 Drain-source voltage ID - VGS -10 -6 Tc = -55C 25 100 5 3 1.0 Common source Tc = 25C Pulse test 0.5 0.3 VGS = -4 V -10 0.1 0.05 1 -0.3 -1.0 -3 -10 0.03 -0.1 -20 Drain current ID (A) -0.3 -1.0 -3 -10 -20 Drain current ID (A) 3 2009-09-29 2SJ380 IDR - VDS -30 Common source Common source Pulse test Tc = 25C -4 (A) ID = -8 A 0.4 -8 Drain reverse current IDR Drain-source ON resistance RDS (ON) () RDS (ON) - Tc 0.5 0.3 -2, -4 VGS = -4 V 0.2 -2 0.1 0 -80 -10 -5 -3 -1 -0.5 -40 -0.3 0 40 80 120 160 VGS = -10 V -3 VGS = -10 V 0 Pulse test -2 -5 0, 1 -1 0.4 0.2 Case temperature Tc (C) 0.6 Drain-source voltage Capacitance - VDS Vth (V) 500 Gate threshold voltage (pF) Capacitance C Ciss 1000 Coss 300 Common source 100 VGS = 0 V Crss f = 1 MHz Tc = 25C -0.3 -1 -3 Drain-source voltage VDS (V) Common source VDS = -10 V ID = -1 mA Pulse test 3000 30 -0.1 1.0 Vth - Tc -4 5000 50 0.8 -10 -30 -100 VDS (V) -3 -2 -1 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) Dynamic Input/Output Characteristics VDS (V) Drain-source voltage Drain power dissipation PD (W) 30 20 10 0 0 40 80 120 -80 -60 Case temperature Tc (C) VDS VDD = -80 V -20 -16 -12 -20 V -40 -8 -40 V -20 -4 VGS 0 0 160 Common source ID = -12 A Tc = 25C Pulse test 20 40 60 80 VGS (V) -100 Gate-source voltage PD - Tc 40 0 100 Total gate charge Qg (nC) 4 2009-09-29 2SJ380 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.5 0.3 0.2 0.1 0.05 0.05 0.02 0.1 0.03 PDM t 0.01 Single pulse T 0.01 Duty = t/T Rth (ch-c) = 3.57C/W 0.005 0.003 10 100 1m 10 m Pulse width 100 m tw 1 (s) Safe Operating Area EAS - Tch -100 500 IC max (pulsed)* 100 s* -30 1 ms* ID max (continuous) Drain current ID (A) Avalanche energy EAS (mJ) -50 10 10 ms* -10 -5 -3 DC operation Tc = 25C 400 300 200 100 -1 -0.5 -0.3 0 25 *: Single nonrepetitive pulse Tc = 25C -3 -10 75 100 125 150 Channel temperature (initial) Tch (C) Curves must be derated linearly with increase in temperature. -0.1 -1 50 VDSS max -30 Drain-source voltage -100 -300 VDS (V) 15 V BVDSS IAR -15 V VDS VDD Test circuit RG = 25 VDD = -25 V, L = 2.94 mH 5 Wave form 1 2 B VDSS AS = *L*I * 2 - B V DD VDSS 2009-09-29 2SJ380 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29