Product Datasheet Search Results:
1 Pages, 112 KB, Scan- 2SC1162
- Continental Device India Limited
- Semiconductor Device Data Book 1996
5 Pages, 23 KB, Original- 2SC1162
- Renesas Technology / Hitachi Semiconductor
- Silicon NPN Epitaxial
5 Pages, 27 KB, Original- 2SC1162-B
- Hitachi Semiconductor
- TRANS GP BJT NPN 35V 2.5A 3TO-126 MOD
5 Pages, 23 KB, Original- 2SC1162B
- Hitachi Semiconductor
- Silicon NPN Epitaxial Transistor
5 Pages, 27 KB, Original- 2SC1162-C
- Hitachi Semiconductor
- TRANS GP BJT NPN 35V 2.5A 3TO-126 MOD
5 Pages, 23 KB, Original- 2SC1162C
- Hitachi Semiconductor
- Silicon NPN Epitaxial Transistor
5 Pages, 27 KB, Original- 2SC1162-D
- Hitachi Semiconductor
- TRANS GP BJT NPN 35V 2.5A 3TO-126 MOD
5 Pages, 23 KB, Original- 2SC1162D
- Hitachi Semiconductor
- Silicon NPN Epitaxial Transistor
Product Details Search Results:
Hitachi.co.jp/2SC1162B
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"500m","I(CBO) Max. (A)":"20u","Absolute Max. Power Diss. (W)":"10","I(C) Abs.(A) Collector Current":"2.5","h(FE) Max. Current gain.":"120","@V(CE) (V) (Test Condition)":"2.0","f(T) Min. (Hz) Transition Freq":"180M","V(BR)CEO (V)":"35","Package":"TO-126","h(FE) Min. Static Current Gain":"60","V(BR)CBO (V)":"35","Military":"N"}...
870 Bytes - 20:03:36, 30 December 2024
Hitachi.co.jp/2SC1162C
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"500m","I(CBO) Max. (A)":"20u","Absolute Max. Power Diss. (W)":"10","I(C) Abs.(A) Collector Current":"2.5","h(FE) Max. Current gain.":"200","@V(CE) (V) (Test Condition)":"2.0","f(T) Min. (Hz) Transition Freq":"180M","V(BR)CEO (V)":"35","Package":"TO-126","h(FE) Min. Static Current Gain":"100","V(BR)CBO (V)":"35","Military":"N"}...
870 Bytes - 20:03:36, 30 December 2024
Hitachi.co.jp/2SC1162D
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"500m","I(CBO) Max. (A)":"20u","Absolute Max. Power Diss. (W)":"10","I(C) Abs.(A) Collector Current":"2.5","h(FE) Max. Current gain.":"320","@V(CE) (V) (Test Condition)":"2.0","f(T) Min. (Hz) Transition Freq":"180M","V(BR)CEO (V)":"35","Package":"TO-126","h(FE) Min. Static Current Gain":"160","V(BR)CBO (V)":"35","Military":"N"}...
871 Bytes - 20:03:36, 30 December 2024
Hitachi.co.jp/2SC1162WT
{"Status":"Discontinued","@I(C) (A) (Test Condition)":"500m","I(CBO) Max. (A)":"20u","Absolute Max. Power Diss. (W)":"10","I(C) Abs.(A) Collector Current":"1.5","h(FE) Max. Current gain.":"320","@V(CE) (V) (Test Condition)":"2.0","f(T) Min. (Hz) Transition Freq":"180M","V(BR)CEO (V)":"35","Package":"TO-126","h(FE) Min. Static Current Gain":"35","V(BR)CBO (V)":"35","Military":"N"}...
875 Bytes - 20:03:36, 30 December 2024
N_a/2SC1162
{"Category":"NPN Transistor, Transistor","Amps":"2.5A","MHz":"180 MHz","Volts":"35V"}...
518 Bytes - 20:03:36, 30 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| N2SC1122U.pdf | 0.04 | 1 | Request |
