2SC1162
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SA715
Outline
1. Emitter
2. Collector
3. Base
TO-126 MOD
123
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 35 V
Collector to emitter voltage VCEO 35 V
Emitter to base voltage VEBO 5V
Collector current IC2.5 A
Collector peak current IC(peak) 3A
Collector power dissipation PC0.75 W
PC*110 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SC1162
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO 35 — — V IC = 1 mA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO 35 — — V IC = 10 mA, RBE = ∞
Emitter to base breakdown
voltage V(BR)EBO 5——VI
E
= 1 mA, IC = 0
Collector cutoff current ICBO ——20µAV
CB = 35 V, IE = 0
DC current transfer ratio hFE*160 — 320 VCE = 2 V, IC = 0.5 A
hFE 20 — — VCE = 2 V, IC = 1.5 A
(pulse test)
Base to emitter voltage VBE — 0.93 1.5 V VCE = 2 V, IC = 1.5 A
(pulse test)
Collector to emitter saturation
voltage VCE(sat) — 0.5 1.0 V IC = 2 A, IB = 0.2 A (pulse test)
Gain bandwidth product fT— 180 — MHz VCE = 2 V, IC = 0.2 A
Note: 1. The 2SC1162 is grouped by hFE as follows.
BCD
60 to 120 100 to 200 160 to 320
0.8
0.6
0.4
0.2
0 50 100 150 200
Ambient temperature Ta (°C)
Collector power dissipation PC (W)
Maximum Collector Dissipation Curve
0.75
2
0.5
0.1 52050
Collector to emitter voltage VCE (V)
Collector current IC (A)
Area of Safe Operation
5
1.0
0.2
12 10
I
C(max)(DC Operation)
TC = 25°C
P
C
= 10 W
2SC1162
3
16
12
8
4
0 50 100 150 200
Case temperature TC (°C)
Collector power dissipation PC (W)
Maximum Collector Dissipation Curve 2.0
25
Collector to emitter voltage VCE (V)
Typical Output Characteristics
1.6
0.4
1340
0.8
1.2
IB = 0
TC = 25°C
2 mA
4
6
8
10
12
15
17
20
24
Collector current IC (A)
TC = 75°C
VCE = 2 V
25
–25
2.0
0.4 1.41.2
Base to emitter voltage VBE (V)
Collector Current IC (A)
Typical Transfer Characteristics
0.02
0.05
0.1
0.20 0.6 0.8 1.0
0.01
0.2
0.5
1.0
280
3.0
Collector current IC (A)
DC current transfer ratio hFE
200
240
80
0.03 0.1 1.0
0
120
160
DC Current Transfer Ratio vs.
Collector Current
TC = 75°C
VCE = 2 V
0.01
40
0.3
25
–25
3.1
φ+0.15
–0.1
8.0 ± 0.5
2.3 ± 0.3
1.1
3.7 ± 0.7
11.0 ± 0.5
15.6 ± 0.5
0.8
2.29 ± 0.5 2.29 ± 0.5 0.55 1.2
2.7 ± 0.4
120°
120°
120°
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-126 Mod
—
—
0.67 g
Unit: mm
Cautions
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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