2SC1162
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SA715
Outline
123
1. Emitter
2. Collector
3. Base
TO-126 MOD
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 35 V
Collector to emitter voltage VCEO 35 V
Emitter to base voltage VEBO 5V
Collector current IC2.5 A
Collector peak current IC(peak) 3A
Collector power dissipation PC0.75 W
PC*110 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
2SC1162
2
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO 35 — — V IC = 1 mA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO 35 — — V IC = 10 mA, RBE = ∞
Emitter to base breakdown
voltage V(BR)EBO 5——VI
E
= 1 mA, IC = 0
Collector cutoff current ICBO ——20µAV
CB = 35 V, IE = 0
DC current transfer ratio hFE*160 — 320 VCE = 2 V, IC = 0.5 A
hFE 20 — — VCE = 2 V, IC = 1.5 A
(pulse test)
Base to emitter voltage VBE — 0.93 1.5 V VCE = 2 V, IC = 1.5 A
(pulse test)
Collector to emitter saturation
voltage VCE(sat) — 0.5 1.0 V IC = 2 A, IB = 0.2 A (pulse
test)
Gain bandwidth product fT— 180 — MHz VCE = 2 V, IC = 0.2 A
Note: 1. The 2SC1162 is grouped by hFE as follows.
BCD
60 to 120 100 to 200 160 to 320
0.8
0.6
0.4
0.2
0 50 100 150 200
Ambient temperature Ta (°C)
Collector power dissipation PC (W)
Maximum Collector Dissipation Curve
0.75
2
0.5
0.1 52050
Collector to emitter voltage VCE (V)
Collector current IC (A)
Area of Safe Operation
5
1.0
0.2
12 10
I
C(max)(DC Operation)
TC = 25°C
P
C
= 10 W
2SC1162
3
16
12
8
4
0 50 100 150 200
Case temperature TC (°C)
Collector power dissipation PC (W)
Maximum Collector Dissipation Curve 2.0
25
Collector to emitter voltage VCE (V)
Typical Output Characteristics
1.6
0.4
1340
0.8
1.2
IB = 0
TC = 25°C
2 mA
4
6
8
10
12
15
17
20
24
Collector current IC (A)
TC = 75°C
VCE = 2 V
25
–25
2.0
0.4 1.41.2
Base to emitter voltage VBE (V)
Collector Current IC (A)
Typical Transfer Characteristics
0.02
0.05
0.1
0.20 0.6 0.8 1.0
0.01
0.2
0.5
1.0
280
3.0
Collector current IC (A)
DC current transfer ratio hFE
200
240
80
0.03 0.1 1.0
0
120
160
DC Current Transfer Ratio vs.
Collector Current
TC = 75°C
VCE = 2 V
0.01
40
0.3
25
–25
2SC1162
4
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
2SC1162
5
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U S A
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