Product Datasheet Search Results:
3 Pages, 144 KB, Original- 2SA1182-GR
- Toshiba America Electronic Components, Inc.
- 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
3 Pages, 144 KB, Original- 2SA1182-O
- Toshiba America Electronic Components, Inc.
- 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2 Pages, 63 KB, Scan- 2SA1182OTE85L
- Toshiba America Electronic Components, Inc.
- 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2 Pages, 63 KB, Scan- 2SA1182OTE85R
- Toshiba America Electronic Components, Inc.
- 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
4 Pages, 586 KB, Original- 2SA1182-O(TE85R,F)
- Toshiba
- Trans GP BJT PNP 30V 0.5A 150mW Automotive 3-Pin S-Mini T/R
2 Pages, 63 KB, Scan- 2SA1182TE85L
- Toshiba America Electronic Components, Inc.
- 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2 Pages, 63 KB, Scan- 2SA1182TE85R
- Toshiba America Electronic Components, Inc.
- 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
Product Details Search Results:
N_a/2SA1182
{"Category":"PNP Transistor, Transistor","Amps":"0.5A","MHz":"200 MHz","Volts":"35V"}...
518 Bytes - 07:08:35, 01 December 2024
Toshiba.co.jp/2SA1182
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-3F1A, TO-236MOD, SC-59, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"25","Collector Current-Max (IC)":"0.5000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Term...
1450 Bytes - 07:08:35, 01 December 2024
Toshiba.co.jp/2SA1182-GR
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-3F1A, TO-236MOD, SC-59, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"70","Collector Current-Max (IC)":"0.5000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Term...
1464 Bytes - 07:08:35, 01 December 2024
Toshiba.co.jp/2SA1182-O
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-3F1A, TO-236MOD, SC-59, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"25","Collector Current-Max (IC)":"0.5000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Term...
1462 Bytes - 07:08:35, 01 December 2024
Toshiba.co.jp/2SA1182O
{"@I(C) (A) (Test Condition)":"100m","V(CE)sat Max.(V)":".25","Absolute Max. Power Diss. (W)":"150m","I(C) Abs.(A) Collector Current":"500m","h(FE) Max. Current gain.":"140","f(T) Min. (Hz) Transition Freq":"200M","@V(CE) (V) (Test Condition)":"6.0","@I(B) (A) (Test Condition)":"10.0m","V(BR)CEO (V)":"30","Package":"SOT-23","h(FE) Min. Static Current Gain":"70","Military":"N"}...
836 Bytes - 07:08:35, 01 December 2024
Toshiba.co.jp/2SA1182OTE85L
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"25","Collector Current-Max (IC)":"0.5000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1395 Bytes - 07:08:35, 01 December 2024
Toshiba.co.jp/2SA1182OTE85R
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"25","Collector Current-Max (IC)":"0.5000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1395 Bytes - 07:08:35, 01 December 2024
Toshiba.co.jp/2SA1182-O(TE85R,F)
{"Collector Current (DC) ":"0.5(A)","Transistor Polarity":"PNP","Collector-Emitter Voltage":"30(V)","Operating Temperature Classification":"Military","Mounting":"Surface Mount","Emitter-Base Voltage":"5(V)","Category ":"Bipolar Small Signal","Packaging":"Tape and Reel","Power Dissipation":"0.15(W)","Operating Temp Range":"-55C to 125C","Frequency":"200(MHz)","Package Type":"SMini","Collector-Base Voltage":"35(V)","Rad Hardened":"No","Output Power":"Not Required(W)","Configuration":"Single","Pin Count":"3","...
1613 Bytes - 07:08:35, 01 December 2024
Toshiba.co.jp/2SA1182TE85L
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"25","Collector Current-Max (IC)":"0.5000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1389 Bytes - 07:08:35, 01 December 2024
Toshiba.co.jp/2SA1182TE85R
{"Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Polarity":"PNP","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"25","Collector Current-Max (IC)":"0.5000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE SMAL...
1389 Bytes - 07:08:35, 01 December 2024
Toshiba.co.jp/2SA1182-Y
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"2-3F1A, TO-236MOD, SC-59, 3 PIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"0.1500 W","Package Style":"SMALL OUTLINE","DC Current Gain-Min (hFE)":"40","Collector Current-Max (IC)":"0.5000 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"SWITCHING","Transition Frequency-Nom (fT)":"200 MHz","Number of Elements":"1","Transistor Element Material":"SILICON","Term...
1462 Bytes - 07:08:35, 01 December 2024
Toshiba.co.jp/2SA1182Y
{"@I(C) (A) (Test Condition)":"100m","V(CE)sat Max.(V)":".25","Absolute Max. Power Diss. (W)":"150m","I(C) Abs.(A) Collector Current":"500m","h(FE) Max. Current gain.":"240","f(T) Min. (Hz) Transition Freq":"200M","@V(CE) (V) (Test Condition)":"6.0","@I(B) (A) (Test Condition)":"10.0m","V(BR)CEO (V)":"30","Package":"SOT-23","h(FE) Min. Static Current Gain":"120","Military":"N"}...
836 Bytes - 07:08:35, 01 December 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 2SA1182.pdf | 0.14 | 1 | Request |
