2SA1182
2003-03-27
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TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1182
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
• Excellent hFE linearity : hFE (2) = 25 (min)
at VCE = −6 V, IC = −400 mA
• Complementary to 2SC2859.
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −35 V
Collector-emitter voltage VCEO −30 V
Emitter-base voltage VEBO −5 V
Collector current IC −500 mA
Base current IB −50 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Coll e ctor cut-off cur r e n t ICBO V
CB = −35 V, IE = 0 ⎯ ⎯ −0.1 µA
Emitte r cut-off current IEBO V
EB = −5 V, IC = 0 ⎯ ⎯ −0.1 µA
hFE (1) V
CE = −1 V, IC = −100 mA 70 ⎯ 240
DC current gain (Note) hFE (2) V
CE = −6 V, IC = −400 mA 25 ⎯ ⎯
Collector-emitter saturation voltage VCE ( sat) I
C = −100 mA, IB = −10 mA ⎯ −0.1 −0.25 V
Base- emi tter volta g e VBE V
CE = −1 V, IC = −100 mA ⎯ −0.8 −1.0 V
Transition frequency fT V
CE = −6 V, IC = −20 mA ⎯ 200 ⎯ MHz
Collector output capacitance Cob V
CB = −6 V, IE = 0, f = 1 MHz ⎯ 13 ⎯ pF
Note: hFE (1) classif icat i on O(O): 70~140, Y(Y): 120~240, GR (G): 200~400 ( ) Marking Symbol
h
FE (2) classification O: 25 (min), Y: 40 (min), GR: 70 (min)
Marking
Unit: mm
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012 g (typ.)
2SA1182
2003-03-27
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2SA1182
2003-03-27
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030619EAA
RESTRICTIONS ON PRODUCT USE
