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Toshiba Electronic Devices & Storage Corporation
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1182
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
AEC-Q101 Qualified (Note1).
Excellent hFE linearity : hFE (2) = 25 (min)
at VCE = −6 V, IC = −400 mA
Complementary to 2SC2859.
Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Collector power dissipation
PC (Note 1)
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note 1： Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.8 mm2 × 3)
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Start of commercial production
1982-12
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Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB 35 V, IE 0 A
0.1
A
Emitter cut-off current
IEBO
VEB 5 V, IC 0 A
0.1
A
DC current gain
hFE (1) (Note)
VCE 1 V, IC 100 mA
70
400
hFE (2) (Note)
VCE 6 V, IC 400 mA
25
Collector-emitter saturation voltage
VCE (sat)
IC 100 mA, IB 10 mA
0.1
0.25
V
Base-emitter voltage
VBE
VCE 1 V, IC 100 mA
0.8
1.0
V
Transition frequency
fT
VCE 6 V, IC 20 mA
200
MHz
Collector output capacitance
Cob
VCB 6 V, IE 0 A, f 1 MHz
13
pF
Note: hFE (1) classification O(0): 70 to 140, Y(Y): 120 to 240, GR(G): 200 to 400 ( ) Marking Symbol
hFE (2) classification O: 25 (min), Y: 40 (min), GR: 70 (min)
Marking
Z: Type Name
O: hFE Rank
Z O
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Toshiba Electronic Devices & Storage Corporation
Characteristics Curves
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
0
50
100
150
200
250
300
025 50 75 100 125 150
COLLECTOR POWER DISSIPATION Pc(mW)
AMBIENT TEMPERATURE Ta(℃)
Pc- Ta
Mounted on an FR4 board
(25.4 mm ×25.4 mm ×1.6 mm,
Cu pad: 0.8 mm2×3)
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Toshiba Electronic Devices & Storage Corporation
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