GWM180-004X2-SL - Zilog

20110307c

GWM 180-004X2

IXYS reserves the right to change limits, test conditions and dimensions.

Preliminary data

VDSS = 40 V

ID25 = 180 A

RDSon typ. = 1.9 mW

Three phase full Bridge

with Trench MOSFETs

in DCB isolated high current package

Applications

AC drives

• in automobiles

- electric power steering

- starter generator

• in industrial vehicles

- propulsion drives

- fork lift drives

• in battery supplied equipment

Features

• MOSFETs in trench technology:

- low RDSon

- optimized intrinsic reverse diode

• package:

- high level of integration

- high current capability 300 A max.

- aux. terminals for MOSFET control

- terminals for soldering or welding

connections

- isolated DCB ceramic base plate

with optimized heat transfer

• Space and weight savings

Package options

• 2 lead forms available

- straight leads (SL)

- SMD lead version (SMD)

L-

L+

MOSFETs

Symbol Conditions Maximum Ratings

VDSS TJ = 25°C to 150°C 40 V

VGS ± 20 V

ID25

ID90

ID110

TC = 25°C

TC = 90°C

TC = 110°C

180

136

120

IF25

IF90

IF110

TC = 25°C (diode)

TC = 90°C (diode)

TC = 110°C (diode)

182

112

Symbol Conditions Characteristic Values

(TJ = 25°C, unless otherwise speciﬁed)

min. typ. max.

RDSon 1) on chip level at TJ = 25°C

VGS = 10 V ; ID = 100 A TJ = 125°C

1.9

2.8

2.5 mW

VGS(th) VDS = 20 V; ID = 1 mA 2.5 4.5 V

IDSS VDS = VDSS; VGS = 0 V TJ = 25°C

TJ = 125°C 50

5 µA

µA

IGSS VGS = ± 20 V; VDS = 0 V 0.2 µA

Qgs

Qgd

VGS = 10 V; VDS = 20 V; ID = 100 A

110

td(on)

td(off)

inductive load

VGS = +10/0 V; VDS = 24 V

ID = 135 A; RG = 39 Ω;

TJ = 125°C

150

240

350

170

Eon

Eoff

Erecoff

0.12

0.51

0.003

RthJC

RthJH with heat transfer paste (IXYS test setup) 1.3

1.0

1.6

K/W

1) VDS = ID·(RDS(on) + RPin to Chip)

Surface Mount DeviceStraight leads

p h a s e - o u t

Recommended replacement for the SMD type: MTI150W40GC

20110307c

GWM 180-004X2

IXYS reserves the right to change limits, test conditions and dimensions.

Component

Symbol Conditions Maximum Ratings

IRMS per pin in main current paths (P+, N-, L1, L2, L3)

may be additionally limited by external connections

300 A

Tstg

-55...+175

-55...+125

°C

VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute 1000 V~

FCmounting force with clip 50 - 250 N

Symbol Conditions Characteristic Values

min. typ. max.

Rpin to chip 1) L+ to L1/L2/L3 or L- to L1/L2/L3 1.0 mW

CPcoupling capacity between shorted

pins and mounting tab in the case

160 pF

Weight 25 g

1) VDS = ID·(RDS(on) + RPin to Chip)

Source-Drain Diode

Symbol Conditions Characteristic Values

(TJ = 25°C, unless otherwise speciﬁed)

min. typ. max.

VSD (diode) IF = 100 A; VGS = 0 V 0.9 1.2 V

trr

QRM

IRM

IF = 100 A; -diF/dt = 600 A/µs

VR = 15 V; TVJ = 125°C

0.31

µC

p h a s e - o u t

20110307c

GWM 180-004X2

IXYS reserves the right to change limits, test conditions and dimensions.

Leads Ordering Part Name &

Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering

Code

Straight Standard GWM 180-004X2 - SL GWM 180-004X2 Blister 28 508 772

SMD Standard GWM 180-004X2 - SMD GWM 180-004X2 Blister 28 508 786

Straight Leads GWM 180-004X2-SL

1 ±0,05

5 ±0,05

0,5 ±0,02

25 +0,20

53 ±0,15

37,5 +0,20

1 ±0,05

(11x) 3 ±0,05

4 ±0,05

(3x) 6 ±0,05

12 ±0,05

1,5

4,5

2,1

Surface Mount Device GWM 180-004X2-SMD

25 +0,20

5 ±0,05

39 ±0,15

4 ±0,05

1 ±0,05

R1 ±0,2

0,5 ±0,02

5° ±2°

1 ±0,05

5 ±0,10

(3x) 6 ±0,05

12 ±0,05

(11x) 3 ±0,05

37,5 +0,20

1,5

4,5

2,1

G1S1G2S2G3S3G4S4G5S5G6S6

L+L-L1L2L3

G1S1G2S2G3S3G4S4G5S5G6S6

L+L-L1L2L3

p h a s e - o u t

20110307c

GWM 180-004X2

IXYS reserves the right to change limits, test conditions and dimensions.

VDS [V]

01234

[A]

100

200

300

400

0 1 2 3 4

100

200

300

400

TVJ [°C]

-25 0 25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

VGS [V]

0 1 2 3 4 5 6 7 8 9

[A]

100

150

200

250

300

350

400

6 V

6.5 V

7 V

-25 0 25 50 75 100 125 150

0.7

0.8

0.9

1.0

1.1

1.2

VDSS

normalized

TJ [°C]

5.5 V

5 V

6.5 V

6 V

5.5 V

5 V

RDS(on) normalized

0 100 200 300 400

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

7 V5 V 5.5 V 6 V 6.5 V

TJ = 25°C

VGS =

20 V

15 V

10 V

VDS [V]

[A]

VGS =

20 V

15 V

10 V

TVJ = 25°C

7 V

ID [A]

RDS(on)

norm.

RDS(on)

mΩ

RDS(on)

norm.

VGS = 10 V

15 V

20 V

TVJ = 125°C

IDSS = 0.25 mA VDS = 16 V

VGS = 10 V

ID = 135 A

TVJ = 125°C

TJ = 125°C

Fig. 1 Drain source breakdown voltage VDSS

versus junction temperature TVJ

Fig. 2 Typical transfer characteristic

Fig. 3 Typical output characteristic Fig. 4 Typical output characteristic

Fig. 6 Typ. drain source on-state resistance

RDS(on) versus ID

Fig. 5 Typ. drain source on-state resistance

RDS(on) versus junction temperature TJ

p h a s e - o u t

20110307c

GWM 180-004X2

IXYS reserves the right to change limits, test conditions and dimensions.

QG [nC]

0 20 40 60 80 100 120

[A]

td(on)

VGS

[V]

0 40 80 120 160 200

0.0

0.1

0.2

0.3

0.4

100

200

300

400

0 40 80 120 160 200

0.0

0.1

0.2

0.3

0.4

0.5

0.6

100

200

300

400

500

600

0 20 40 60 80 100 120

0.0

0.2

0.4

0.6

0.8

1.0

100

200

300

400

500

0 20 40 60 80 100 120

0.0

0.2

0.4

0.6

0.8

1.0

200

400

600

800

1000

TC [°C]

0 25 50 75 100 125 150 175 200

100

120

140

160

180

200

VDS = 15 V

Eon

Eon,

Erec(off)

[mJ]

ID [A] ID [A]

[ns]

Eoff

td(off)

[ns]

Eon Erec(on) x10

td(on)

RG [Ω]

Eoff

[mJ] Eoff

td(off)

Eoff

[mJ]

Eon,

Erec(on)

[mJ]

[ns]

VDS = 15 V

VGS = +10/0 V

ID = 135 A

TJ = 125°C

RG [Ω]

VDS = 28 V

ID = 135 A

TVJ = 25°C

VDS = 15 V

VGS = +10/0 V

RG = 39 Ω

TVJ = 125°C

10x Erec(off)

VDS = 15 V

VGS = +10/0 V

RG = 39 Ω

TVJ = 125°C

VDS = 15 V

VGS = +10/0 V

ID = 135 A

TVJ = 125°C

Fig. 7 Gate charge characteristics Fig. 8 Drain current ID vs. temperature TC

Fig. 9 Typ. turn-on energy & switching times

vs. collector current, inductive switching

Fig. 10 Typ. turn-off energy & switching times

vs. collector current, inductive switching

Fig. 12 Typ. turn-off energy & switching times

vs. gate resistor, inductive switching

Fig. 11 Typ. turn-on energy & switching times

vs. gate resistor, inductive switching

p h a s e - o u t

20110307c

GWM 180-004X2

IXYS reserves the right to change limits, test conditions and dimensions.

200 300 400 500 600 700 800

-diF /dt [A/µs]

200 300 400 500 600 700 800

trr

[ns]

VSD [V]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

[A]

100

150

200

250

300

350

400

200 400 600 800

Qrr

[µC]

0.0

0.1

0.2

0.3

0.4

0.5

0.6

TJ = -25°C

25°C

125°C

150°C

t [s]

0.001 0.01 0.1 1 10

Zth

[K/W]

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

-diF /dt [A/µs]

IRM

[A]

VR = 15 V

TVJ = 125°C

50 A

150 A

100 A

IF = 50 A

100 A

150 A

-diF /dt [A/µs]

IF = 50 A

100 A

150 A

Fig. 13 Reverse recovery time trr

of the body diodes vs. di/dt

Fig. 14 Reverse recovery current IRM

of the body diodes versus di /dt

Fig. 15 Reverse recovery charge Qrr

of the body diodes versus di/dt

Fig. 16 Source current IS versus

source drain voltage VSD (body diode)

Fig. 17 Deﬁnition of switching times

p h a s e - o u t