Product Datasheet Search Results:
9 Pages, 603 KB, Original- SPD08P06PGXT
- Infineon Technologies Ag
- 8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
Product Details Search Results:
Infineon.com/SPD08P06PGXT
{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"70 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8.8 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.3000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"35.2 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SE...
1514 Bytes - 04:46:45, 18 November 2024
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SPD08N50C3.pdf | 0.60 | 1 | Request |
