SPD08P06P G
SIPMOS® Power-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C A
TA=100 °C
Pulsed drain current ID,pulse TA=25 °C
Avalanche energy, single pulse EAS ID=8.83 A, RGS=25 ΩmJ
Avalanche energy, periodic limited by
Tjmax
EAR 4.2
Reverse diode dv/dtdv/dt
ID=8.83 A, VDS=48 V,
di/dt=-200 A/µs,
Tj,max=175 °C
kV/µs
Gate source voltage VGS V
Power dissipation Ptot TA=25 °C W
Operating and storage temperature Tj, Tstg °C
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1 55/175/56
"-55 ... +175"
±20
-6
260 °C
-8.83
-6.25
42
Value
70
-35.32
steady state
VDS -60 V
RDS(on),max 0.3 Ω
ID-8.8 A
Product Summary
PG-TO252-3
Type Package Tape and reel information Marking Lead free Packing
SPD08P06PGPG-TO252-3
Rev 1.92 page 1 2012-09-10
1000 pcs / reel 08P06P Yes
° Qualified according to AEC Q101
Non dry
SPD08P06P G G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - case
R thJC
- - K/W
Thermal resistance,
junction - ambient,leaded R thJA - - -
SMD version, device on PCB:
R thJA
minimal footprint - - 75 K/W
6 cm2 cooling area1) --70
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=-250 µA -60 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=-250 µA -2.1 -3.0 -4
Zero gate voltage drain current IDSS
VDS=-60 V, VGS=0 V,
Tj=25 °C - -0.1 -1 µA
VDS=-60 V, VGS=0 V,
Tj=150 °C - -10 -100
Gate-source leakage current IGSS VGS=-20 V, VDS=0 V - -10 -100 nA
Drain-source on-state resistance RDS(on) VGS=-6.2 V, ID=-10 A - 230 300 mΩ
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=-6.2 A 2.5 4.9 - S
1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm
2 ( one layer, 70µ, thick) copper area for drain connection.
PCB is vertical without blown air
.
Values
Rev 1.92 page 2 2012-09-10
3.6
50
SPD08P06P G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 335 420 pF
Output capacitance Coss - 105 135
Reverse transfer capacitance Crss -6595
Turn-on delay time td(on) - 16.0 24.0
Rise time tr- 46.0 69
Turn-off delay time td(off) -4872
Fall time tf-1421
Gate Charge Characteristics
Gate to source charge Qgs - -1.9 -2.6 nC
Gate to drain charge Qgd --5-8
Gate charge total Qg- -10 -13
Gate plateau voltage Vplateau --6-V
Reverse Diode
Diode continuous forward current IS- - -8.80 A
Diode pulse current IS,pulse - - -35.3
Diode forward voltage VSD
VGS=0 V, IF=-8.83 A,
Tj=25 °C - -0.98 -1.55 V
Reverse recovery time trr -6090ns
Reverse recovery charge Qrr - 100 150 nC
TA=25 °C
Values
VGS=0 V, VDS=-25 V,
f=1 MHz
VDD=-30 V, VGS=-
10 V, ID=-6.2 A,
RG=6 Ω
VDD=-48 V, ID=-8.8 A,
VGS=0 to -10 V
VR=30 V, IF=|IS|,
diF/dt=100 A/µs
Rev 1.92 page 3 2012-09-10
SPD08P06P G
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); |VGS|≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
102
101
100
10-1
10-2
-V DS [V]
-I D [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
102
101
100
10-1
10-2
10-3
10-4
10-5
101
100
10-1
tp [s]
ZthJS [K/W]
0
10
20
30
40
0 40 80 120 160
TA [°C]
Ptot [W]
0
1
2
3
4
5
6
7
8
9
0 40 80 120 160
TA [°C]
-I D [A]
Rev 1.92 page 4 2012-09-10
SPD08P06P G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
-6 V
-5.5 V
-4 V
-4.5 V
-5 V
-7 V
-10 V
-20V
0
100
200
300
400
500
600
700
800
900
1000
0 2 4 6 8 10 12 14
-I D [A]
RDS(on) [mΩ]
25 °C
125 °C
0
1
2
3
4
5
6
012345678
-V GS [V]
-I D [A]
0
1
2
3
4
5
6
0246810
-I D [A]
gfs [S]
-4 V
-4.5 V
-5V
-5.5 V
-6 V
-7 V
-20 V
-10 V
0
3
6
9
12
15
18
012345678
-V DS [V]
-I D [A]
Rev 1.92 page 5 2012-09-10
SPD08P06P G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=-6.2 A; VGS=-10 V VGS(th)=f(Tj); VGS=VDS; ID=-250 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ.
98 %
0
100
200
300
400
500
600
700
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
Ciss
Coss
Crss
103
102
101
0 5 10 15 20 25
-V DS [V]
C [pF]
typ.
min.
max.
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60 -20 20 60 100 140 180
Tj [°C]
-V GS(th) [V]
25 °C, typ
175 °C, typ
25 °C, 98%
175 °C, 98%
101
100
10-1
10-2
0 0.5 1 1.5 2 2.5 3
-V SD [V]
IF [A]
Rev 1.92 page 6 2012-09-10
SPD08P06P G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=-8.8 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage
VBR(DSS)=f(Tj); ID=-250 µA
50
55
60
65
70
-60 -20 20 60 100 140 180
Tj [°C]
-V BR(DSS) [V]
25 °C
100 °C
125 °C
103
102
101
100
101
100
tAV [µs]
-I AV [A]
12 V
30 V
48 V
0
2
4
6
8
10
12
14
16
03691215
Qgate [nC]
VGS [V]
Rev 1.92 page 7 2012-09-10
Rev 1.92 page 8 2012-09-10
SPD08P06P G
Package outline: PG-TO252-3
Rev 1.92 page 9 2012-09-10
SPD08P06P G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation,
warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office. Infineon
Technologies components may be used in life-support devices or systems only with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
